公开(公告)号：US20230102188A1

公开(公告)日：2023-03-30

申请号：US17902295

申请日：2022-09-02

Applicant: Rohm Co., Ltd.

Inventor： Toru Takuma ,  Adrian JOITA ,  Shuntaro TAKAHASHI

IPC: H03F1/52 ,  H03F3/217

Abstract: An overcurrent protection circuit includes: a first transistor and a second transistor configured to form an amplifier input stage that receives input of a detection signal according to a monitoring target current; and a third transistor configured to form an amplifier output stage that generates a current output signal according to a difference between the detection signal and a reference signal and causes the current output signal to be negatively fed back to the amplifier input stage, wherein the monitoring target current is limited based on the current output signal output from the third transistor.

公开(公告)号：US20210098346A1

公开(公告)日：2021-04-01

申请号：US17044658

申请日：2019-04-11

Applicant: ROHM CO., LTD.

Inventor： Kazuki OKUYAMA ,  Shuntaro TAKAHASHI ,  Motoharu HAGA ,  Shingo YOSHIDA ,  Kazuhisa KUMAGAI ,  Hajime OKUDA

IPC: H01L23/495 ,  H01L23/34 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L29/40 ,  H01L29/78 ,  H01L21/765 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

公开(公告)号：US20180048140A1

公开(公告)日：2018-02-15

申请号：US15672958

申请日：2017-08-09

Applicant: Rohm Co., Ltd.

Inventor： Toru TAKUMA ,  Shuntaro TAKAHASHI ,  Naoki TAKAHASHI

IPC: H02H3/08 ,  H02H9/02 ,  G06F1/30 ,  B60R16/02 ,  H03K19/003 ,  G05F1/573

CPC classification number: H02H3/08 ,  B60R16/02 ,  G05F1/573 ,  G06F1/305 ,  H02H9/02 ,  H02H9/025 ,  H03K19/00315

Abstract: An overcurrent protection circuit includes a current control part configured to control conductance of a transistor so as to limit an output current flowing when the transistor is turned on to a predetermined upper limit or less, and a duty control part configured to forcibly turning on/off the transistor at a predetermined duty ratio when a temperature protection circuit detects a temperature abnormality in a state where the current control part limits the output current.