公开(公告)号：US20250069997A1

公开(公告)日：2025-02-27

申请号：US18945218

申请日：2024-11-12

Applicant: ROHM CO., LTD.

Inventor： Kazuki OKUYAMA ,  Shuntaro TAKAHASHI ,  Motoharu HAGA ,  Shingo YOSHIDA ,  Kazuhisa KUMAGAI ,  Hajime OKUDA

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/765 ,  H01L23/00 ,  H01L23/31 ,  H01L23/34 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

公开(公告)号：US20210098346A1

公开(公告)日：2021-04-01

申请号：US17044658

申请日：2019-04-11

Applicant: ROHM CO., LTD.

Inventor： Kazuki OKUYAMA ,  Shuntaro TAKAHASHI ,  Motoharu HAGA ,  Shingo YOSHIDA ,  Kazuhisa KUMAGAI ,  Hajime OKUDA

IPC: H01L23/495 ,  H01L23/34 ,  H01L23/31 ,  H01L23/00 ,  H01L21/48 ,  H01L21/56 ,  H01L29/40 ,  H01L29/78 ,  H01L21/765 ,  H01L29/66

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

公开(公告)号：US20250022777A1

公开(公告)日：2025-01-16

申请号：US18900109

申请日：2024-09-27

Applicant: ROHM CO., LTD.

Inventor： Shingo YOSHIDA

IPC: H01L23/495

Abstract: A semiconductor device includes a semiconductor element, a first lead, a sealing resin, and a first connecting member. The first lead includes a die pad portion that includes a die-pad obverse surface facing a first side in a thickness direction, and a support portion supporting the die pad portion. The semiconductor element is mounted on the die-pad obverse surface. The sealing resin covers the semiconductor element. The first connecting member is electrically connected to the support portion and electrically conductive to the semiconductor element. The support portion includes a connecting surface to which the first connecting member is electrically connected. The connecting surface and the die-pad obverse surface are different in position in the thickness direction.

公开(公告)号：US20180005981A1

公开(公告)日：2018-01-04

申请号：US15707632

申请日：2017-09-18

Applicant: ROHM CO., LTD.

Inventor： Motoharu HAGA ,  Shingo YOSHIDA ,  Yasumasa KASUYA ,  Toichi NAGAHARA ,  Akihiro KIMURA ,  Kenji FUJII

IPC: H01L23/00 ,  H01L23/495 ,  B23K20/10 ,  H01L21/56 ,  B23K20/24 ,  B23K20/00 ,  H01L23/31

CPC classification number: H01L24/85 ,  B23K20/005 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78307 ,  H01L2224/78309 ,  H01L2224/83 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2224/85986 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/20757 ,  H01L2924/3512 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/207 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/20758 ,  H01L2924/00015

Abstract: A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

公开(公告)号：US20240087996A1

公开(公告)日：2024-03-14

申请号：US18510204

申请日：2023-11-15

Applicant: ROHM CO., LTD.

Inventor： Kazuki OKUYAMA ,  Shuntaro TAKAHASHI ,  Motoharu HAGA ,  Shingo YOSHIDA ,  Kazuhisa KUMAGAI ,  Hajime OKUDA

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/765 ,  H01L23/00 ,  H01L23/31 ,  H01L23/34 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L23/49562 ,  H01L21/4825 ,  H01L21/565 ,  H01L21/765 ,  H01L23/3114 ,  H01L23/34 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/48 ,  H01L29/407 ,  H01L29/66734 ,  H01L29/7813 ,  H01L2224/48245 ,  H01L2224/48472 ,  H01L2924/13091

Abstract: A semiconductor device includes a semiconductor element and a first connection member. The semiconductor element includes a substrate and an electrode pad. The substrate includes a transistor formation region, in which a transistor is formed and which is shaped to be non-quadrangular. The electrode pad is located on the transistor formation region. The first connection member is connected to the electrode pad at one location. The electrode pad is arranged to cover a center of gravity of the transistor formation region in a plan view of the electrode pad. In the plan view, a connection region in which the first connection member is connected to the electrode pad includes a center of gravity position of the transistor formation region.

公开(公告)号：US20150200181A1

公开(公告)日：2015-07-16

申请号：US14664168

申请日：2015-03-20

Applicant: ROHM CO., LTD.

Inventor： Motoharu HAGA ,  Shingo YOSHIDA ,  Yasumasa KASUYA ,  Toichi NAGAHARA ,  Akihiro KIMURA ,  Kenji FUJII

IPC: H01L23/00 ,  B23K20/10 ,  B23K20/00 ,  H01L21/56 ,  B23K20/24

CPC classification number: H01L24/85 ,  B23K20/005 ,  B23K20/10 ,  B23K20/24 ,  H01L21/56 ,  H01L23/3107 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/4952 ,  H01L23/49548 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/29 ,  H01L24/32 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/83 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48451 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/48639 ,  H01L2224/48724 ,  H01L2224/48739 ,  H01L2224/48747 ,  H01L2224/48824 ,  H01L2224/48839 ,  H01L2224/48847 ,  H01L2224/49171 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78303 ,  H01L2224/78307 ,  H01L2224/78309 ,  H01L2224/83 ,  H01L2224/8314 ,  H01L2224/83192 ,  H01L2224/83439 ,  H01L2224/838 ,  H01L2224/85 ,  H01L2224/85045 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85186 ,  H01L2224/85205 ,  H01L2224/85439 ,  H01L2224/8592 ,  H01L2224/85986 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01007 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01016 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/0104 ,  H01L2924/01045 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01051 ,  H01L2924/01066 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01083 ,  H01L2924/01204 ,  H01L2924/01205 ,  H01L2924/01206 ,  H01L2924/013 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/0133 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/04953 ,  H01L2924/05042 ,  H01L2924/05442 ,  H01L2924/0665 ,  H01L2924/10162 ,  H01L2924/10253 ,  H01L2924/12042 ,  H01L2924/15747 ,  H01L2924/181 ,  H01L2924/18301 ,  H01L2924/19107 ,  H01L2924/20752 ,  H01L2924/20757 ,  H01L2924/3512 ,  H01L2924/01026 ,  H01L2924/00 ,  H01L2924/2076 ,  H01L2924/207 ,  H01L2924/20753 ,  H01L2924/20756 ,  H01L2924/20758 ,  H01L2924/00015

Abstract: A semiconductor device according to the present invention includes a semiconductor chip, an electrode pad made of a metal material containing aluminum and formed on a top surface of the semiconductor chip, an electrode lead disposed at a periphery of the semiconductor chip, a bonding wire having a linearly-extending main body portion and having a pad bond portion and a lead bond portion formed at respective ends of the main body portion and respectively bonded to the electrode pad and the electrode lead, and a resin package sealing the semiconductor chip, the electrode lead, and the bonding wire, the bonding wire is made of copper, and the entire electrode pad and the entire pad bond portion are integrally covered by a water-impermeable film.

Abstract translation: 根据本发明的半导体器件包括半导体芯片，由含有铝的金属材料制成并形成在半导体芯片的顶表面上的电极焊盘，设置在半导体芯片的周围的电极引线，具有 线状延伸的主体部分，并且具有形成在主体部分的各个端部处并分别结合到电极焊盘和电极引线的焊盘接合部分和引线接合部分，以及密封半导体芯片的树脂封装件 引线和接合线，接合线由铜制成，并且整个电极焊盘和整个焊盘接合部分被不透水膜整体地覆盖。