SEMICONDUCTOR LIGHT EMITTING DEVICE
    12.
    发明申请

    公开(公告)号:US20130146909A1

    公开(公告)日:2013-06-13

    申请号:US13547561

    申请日:2012-07-12

    IPC分类号: H01L33/60

    摘要: A semiconductor light emitting device includes a semiconductor layer including a light emitting layer, a p-side electrode provided on a second surface of the semiconductor layer, and an n-side electrode provided on the semiconductor layer to be separated from the p-side electrode. The p-side electrode includes a plurality of contact metal selectively provided on the semiconductor layer in contact with the second surface, a transparent film provided on the semiconductor layer in contact with the second surface between the plurality of contact metal, and a reflective metal provided on the contact metal and on the transparent film in contact with the contact metal, the reflective metal including silver. A surface area of a surface of the reflective metal on the light emitting layer side is greater than the sum total of a surface area of the plurality of contact metal contacting the semiconductor layer.