-
公开(公告)号：US20130285064A1
公开(公告)日：2013-10-31
申请号：US13598504
申请日：2012-08-29
申请人： Akihiro KOJIMA , Hideto FURUYAMA , Miyoko SHIMADA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Yoshiaki SUGIZAKI
发明人： Akihiro KOJIMA , Hideto FURUYAMA , Miyoko SHIMADA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Yoshiaki SUGIZAKI
CPC分类号： H01L33/44 , H01L33/486 , H01L33/50
摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.
摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，荧光体层和透明膜。 半导体层具有第一面，与第一面相反的第二面和发光层。 p侧电极设置在包括发光层的区域的第二面上。 n侧电极设置在不包括发光层的区域的第二面上。 磷光体层设置在第一面上。 荧光体层包括分散在透明树脂中的透明树脂和荧光体。 透明膜设置在荧光体层上，粘合性低于透明树脂的粘合性。
-
公开(公告)号：US20130313588A1
公开(公告)日：2013-11-28
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro KOJIMA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Hideko MUKAIDA , Miyoko SHIMADA , Yoshiaki SUGIZAKI , Hideto FURUYAMA
发明人： Akihiro KOJIMA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Hideko MUKAIDA , Miyoko SHIMADA , Yoshiaki SUGIZAKI , Hideto FURUYAMA
IPC分类号： H01L33/52
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。
-
公开(公告)号：US20130285089A1
公开(公告)日：2013-10-31
申请号：US13598356
申请日：2012-08-29
申请人： Yosuke AKIMOTO , Akihiro KOJIMA , Miyoko SHIMADA , Hideyuki TOMIZAWA , Yoshiaki SUGIZAKI , Hideto FURUYAMA
发明人： Yosuke AKIMOTO , Akihiro KOJIMA , Miyoko SHIMADA , Hideyuki TOMIZAWA , Yoshiaki SUGIZAKI , Hideto FURUYAMA
IPC分类号： H01L33/44
CPC分类号： H01L33/502 , H01L33/22 , H01L33/486
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer including a light emitting layer and a fluorescent substance excited by light emitted from the light emitting layer, a peak wavelength of a radiation spectrum of the light emitting layer at a room temperature being shorter than a peak wavelength of an excitation spectrum of the fluorescent substance.
摘要翻译： 根据实施例，半导体发光器件包括包含发光层的半导体层和由发光层发射的光激发的荧光物质，室温下发光层的辐射光谱的峰值波长为 短于荧光物质的激发光谱的峰值波长。
-
公开(公告)号：US20130285077A1
公开(公告)日：2013-10-31
申请号：US13597055
申请日：2012-08-28
IPC分类号： H01L27/15
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/156 , H01L33/486 , H01L33/507 , H01L33/508 , H01L33/52 , H01L33/62 , H01L2224/16 , H01L2933/0091
摘要： According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.
-
公开(公告)号：US20130285090A1
公开(公告)日：2013-10-31
申请号：US13598393
申请日：2012-08-29
IPC分类号： H01L33/40
CPC分类号： H01L33/504 , H01L24/97 , H01L33/46 , H01L33/501 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0091 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.
摘要翻译： 根据一个实施例，半导体发光器件包括发光元件，荧光体层和荧光反射膜。 荧光体层具有透明介质，分散在透明介质中的荧光体和分散在透明介质中的粒子。 荧光体被激发光激发，从而发出荧光。 粒子的大小不大于激发光的波长的1/10。 该颗粒具有与透明介质的折射率不同的折射率。 荧光反射膜设置在发光元件和荧光体层之间。 荧光反射膜相对于荧光体的荧光波长具有比相对于激发光的波长的反射率更高的反射率。
-
公开(公告)号：US20130146909A1
公开(公告)日：2013-06-13
申请号：US13547561
申请日：2012-07-12
IPC分类号： H01L33/60
CPC分类号： H01L33/62 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46
摘要： A semiconductor light emitting device includes a semiconductor layer including a light emitting layer, a p-side electrode provided on a second surface of the semiconductor layer, and an n-side electrode provided on the semiconductor layer to be separated from the p-side electrode. The p-side electrode includes a plurality of contact metal selectively provided on the semiconductor layer in contact with the second surface, a transparent film provided on the semiconductor layer in contact with the second surface between the plurality of contact metal, and a reflective metal provided on the contact metal and on the transparent film in contact with the contact metal, the reflective metal including silver. A surface area of a surface of the reflective metal on the light emitting layer side is greater than the sum total of a surface area of the plurality of contact metal contacting the semiconductor layer.
-
公开(公告)号：US20130082294A1
公开(公告)日：2013-04-04
申请号：US13607480
申请日：2012-09-07
申请人： Toshiya NAKAYAMA , Kazuhito HIGUCHI , Hiroshi KOIZUMI , Hideo NISHIUCHI , Susumu OBATA , Akiya KIMURA , Yoshiaki SUGIZAKI , Akihiro KOJIMA , Yosuke AKIMOTO
发明人： Toshiya NAKAYAMA , Kazuhito HIGUCHI , Hiroshi KOIZUMI , Hideo NISHIUCHI , Susumu OBATA , Akiya KIMURA , Yoshiaki SUGIZAKI , Akihiro KOJIMA , Yosuke AKIMOTO
IPC分类号： H01L33/50
CPC分类号： H01L33/56 , H01L27/15 , H01L33/502 , H01L33/505 , H01L33/508 , H01L33/54 , H01L2933/0041
摘要： According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.
摘要翻译： 根据一个实施例，发射光的发光单元，包括荧光体并设置在发光单元的主表面上的波长转换单元和设置在波长转换器顶部的透明树脂 单位，准备。 透明树脂具有比波长转换单元更大的弹性模量和/或更高的肖氏硬度。
-
公开(公告)号：US20090188709A1
公开(公告)日：2009-07-30
申请号：US12358869
申请日：2009-01-23
CPC分类号： B81B7/0038 , B81B2201/0221 , B81B2203/04 , B81C1/00476
摘要： A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.
摘要翻译： 衬底包括功能元件。 绝缘的第一膜形成空腔，其与基板一起存储功能元件，并且包括多个通孔。 绝缘的第二膜覆盖多个通孔，形成在第一膜上，并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜，其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上，并且具有大于第三膜的弹性。
-
公开(公告)号：US20130032386A1
公开(公告)日：2013-02-07
申请号：US13647845
申请日：2012-10-09
CPC分类号： B81B7/0038 , B81B2201/0221 , B81B2203/04 , B81C1/00476
摘要： A substrate includes a functional element. An insulating first film forms a cavity which stores the functional element, together with the substrate, and includes a plurality of through-holes. An insulating second film covers the plurality of through-holes, is formed on the first film, and has a gas permeability which is higher than that of the first film. An insulating third film is formed on the second film and has a gas permeability which is lower than the second film. An insulating fourth film is formed on the third film and has an elasticity which is larger than the third film.
摘要翻译： 衬底包括功能元件。 绝缘的第一膜形成空腔，其与基板一起存储功能元件，并且包括多个通孔。 绝缘的第二膜覆盖多个通孔，形成在第一膜上，并且具有比第一膜高的透气性。 在第二薄膜上形成绝缘的第三薄膜，其透气度低于第二薄膜。 绝缘的第四膜形成在第三膜上，并且具有大于第三膜的弹性。
-
公开(公告)号：US20120178192A1
公开(公告)日：2012-07-12
申请号：US13423591
申请日：2012-03-19
申请人： Akihiro KOJIMA , Yoshiaki Sugizaki
发明人： Akihiro KOJIMA , Yoshiaki Sugizaki
CPC分类号： H01L33/486 , H01L33/44 , H01L33/505 , H01L33/58 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor light emitting device, includes: a substrate including a first major surface and a second major surface, the first major surface including a recess and a protrusion, the second major surface being formed on a side opposite to the first major surface; a first electrode provided on the first major surface; a semiconductor light emitting element provided on the first electrode and electrically connected to the first electrode; a second electrode provided on the second major surface; and a through-electrode provided to pass through the substrate at the recess and electrically connect the first electrode and the second electrode.
摘要翻译： 一种半导体发光器件，包括：包括第一主表面和第二主表面的基板，所述第一主表面包括凹部和突起，所述第二主表面形成在与所述第一主表面相对的一侧上; 设置在所述第一主表面上的第一电极; 半导体发光元件，设置在所述第一电极上并电连接到所述第一电极; 设置在所述第二主表面上的第二电极; 以及设置成在所述凹部处穿过所述基板并且电连接所述第一电极和所述第二电极的贯通电极。
-
-
-
-
-
-
-
-
-
搜索结果
13 条记录 (耗时 0.035 秒)
