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公开(公告)号：US08648375B2
公开(公告)日：2014-02-11
申请号：US13601336
申请日：2012-08-31
IPC分类号： H01L33/00
CPC分类号： H01L33/505
摘要： According to one embodiment, a semiconductor light emitting device includes: a semiconductor layer including a first and second surfaces, and a light emitting layer; a p-side electrode provided on the second surface; an n-side electrode provided on the second surface; a first insulating film covering the p-side and the n-side electrodes; a p-side wiring section electrically connected to the p-side electrode through the first insulating film; an n-side wiring section electrically connected to the n-side electrode through the first insulating film; and a phosphor layer provided on the first surface. The phosphor layer has an upper surface and an oblique surface, the oblique surface forming an obtuse angle with the upper surface and inclined with respect to the first surface. Thickness of the phosphor layer immediately below the oblique surface is smaller than thickness of the phosphor layer immediately below the upper surface.
摘要翻译： 根据一个实施例，半导体发光器件包括：包括第一和第二表面的半导体层和发光层; 设置在第二表面上的p侧电极; 设置在所述第二表面上的n侧电极; 覆盖p侧和n侧电极的第一绝缘膜; 通过第一绝缘膜电连接到p侧电极的p侧布线部分; 通过第一绝缘膜与n侧电极电连接的n侧配线部; 以及设置在第一表面上的荧光体层。 荧光体层具有上表面和倾斜表面，倾斜表面与上表面形成钝角并相对于第一表面倾斜。 斜面正下方的荧光体层的厚度小于上表面正下方的荧光体层的厚度。
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公开(公告)号：US20130313588A1
公开(公告)日：2013-11-28
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro KOJIMA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Hideko MUKAIDA , Miyoko SHIMADA , Yoshiaki SUGIZAKI , Hideto FURUYAMA
发明人： Akihiro KOJIMA , Yosuke AKIMOTO , Hideyuki TOMIZAWA , Hideko MUKAIDA , Miyoko SHIMADA , Yoshiaki SUGIZAKI , Hideto FURUYAMA
IPC分类号： H01L33/52
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。
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公开(公告)号：US20130285090A1
公开(公告)日：2013-10-31
申请号：US13598393
申请日：2012-08-29
IPC分类号： H01L33/40
CPC分类号： H01L33/504 , H01L24/97 , H01L33/46 , H01L33/501 , H01L33/52 , H01L33/60 , H01L33/62 , H01L2924/12041 , H01L2924/12042 , H01L2924/181 , H01L2933/0091 , H01L2924/00
摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting element, a phosphor layer, and a fluorescent reflection film. The phosphor layer has a transparent medium, a phosphor dispersed in the transparent medium, and a particle dispersed in the transparent medium. The phosphor is excited by the excitation light so as to emit a fluorescence. The particle is a magnitude of not more than 1/10 a wavelength of the excitation light. The particle has a different refractive index from a refractive index of the transparent medium. The fluorescent reflection film is provided between the light emitting element and the phosphor layer. The fluorescent reflection film has a higher reflectance with respect to a fluorescent wavelength of the phosphor, than a reflectance with respect to the wavelength of the excitation light.
摘要翻译： 根据一个实施例，半导体发光器件包括发光元件，荧光体层和荧光反射膜。 荧光体层具有透明介质，分散在透明介质中的荧光体和分散在透明介质中的粒子。 荧光体被激发光激发，从而发出荧光。 粒子的大小不大于激发光的波长的1/10。 该颗粒具有与透明介质的折射率不同的折射率。 荧光反射膜设置在发光元件和荧光体层之间。 荧光反射膜相对于荧光体的荧光波长具有比相对于激发光的波长的反射率更高的反射率。
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公开(公告)号：US20130285089A1
公开(公告)日：2013-10-31
申请号：US13598356
申请日：2012-08-29
申请人： Yosuke AKIMOTO , Akihiro KOJIMA , Miyoko SHIMADA , Hideyuki TOMIZAWA , Yoshiaki SUGIZAKI , Hideto FURUYAMA
发明人： Yosuke AKIMOTO , Akihiro KOJIMA , Miyoko SHIMADA , Hideyuki TOMIZAWA , Yoshiaki SUGIZAKI , Hideto FURUYAMA
IPC分类号： H01L33/44
CPC分类号： H01L33/502 , H01L33/22 , H01L33/486
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer including a light emitting layer and a fluorescent substance excited by light emitted from the light emitting layer, a peak wavelength of a radiation spectrum of the light emitting layer at a room temperature being shorter than a peak wavelength of an excitation spectrum of the fluorescent substance.
摘要翻译： 根据实施例，半导体发光器件包括包含发光层的半导体层和由发光层发射的光激发的荧光物质，室温下发光层的辐射光谱的峰值波长为 短于荧光物质的激发光谱的峰值波长。
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公开(公告)号：US20130146909A1
公开(公告)日：2013-06-13
申请号：US13547561
申请日：2012-07-12
IPC分类号： H01L33/60
CPC分类号： H01L33/62 , H01L33/387 , H01L33/405 , H01L33/42 , H01L33/46
摘要： A semiconductor light emitting device includes a semiconductor layer including a light emitting layer, a p-side electrode provided on a second surface of the semiconductor layer, and an n-side electrode provided on the semiconductor layer to be separated from the p-side electrode. The p-side electrode includes a plurality of contact metal selectively provided on the semiconductor layer in contact with the second surface, a transparent film provided on the semiconductor layer in contact with the second surface between the plurality of contact metal, and a reflective metal provided on the contact metal and on the transparent film in contact with the contact metal, the reflective metal including silver. A surface area of a surface of the reflective metal on the light emitting layer side is greater than the sum total of a surface area of the plurality of contact metal contacting the semiconductor layer.
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公开(公告)号：US20130020706A1
公开(公告)日：2013-01-24
申请号：US13423081
申请日：2012-03-16
CPC分类号： H01L21/7682 , H01L21/31053 , H01L21/76834 , H01L21/76885
摘要： In accordance with an embodiment, a semiconductor device includes a substrate, a line-and-space structure, a first film and a second film. The line-and-space structure includes line patterns arranged on the substrate parallel to one another at a predetermined distance. The first film is formed on side surfaces and bottom surfaces of the line patterns by an insulating film material. The second film is formed on the line-and-space structure across a space between the line patterns by a material showing low wettability to the first film. Space between the line patterns includes an air gap in which at least a bottom surface of the first film is totally exposed.
摘要翻译： 根据实施例，半导体器件包括衬底，线间距结构，第一膜和第二膜。 线间空间结构包括以预定距离彼此平行布置在基板上的线图案。 第一膜通过绝缘膜材料形成在线图案的侧表面和底表面上。 通过对第一膜显示低润湿性的材料，在线图形之间的空间结构上形成第二膜。 线图案之间的空间包括其中至少第一膜的底表面完全暴露的气隙。
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7.发明授权Composition for film formation, insulating film, semiconductor device, and process for producing the semiconductor device 有权用于成膜的组合物，绝缘膜，半导体器件以及用于制造半导体器件的工艺公开(公告)号：US07999356B2
公开(公告)日：2011-08-16
申请号：US12548492
申请日：2009-08-27
IPC分类号： H01L23/58
CPC分类号： H01L21/76801 , C07F7/1804 , H01L21/02126 , H01L21/02211 , H01L21/02274 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/02351 , H01L21/3105 , H01L21/31633 , H01L21/67109 , H01L21/67115
摘要： According to one aspect of the present invention, there is provided a composition for film formation, comprising a compound represented by general formula (I) or a hydrolyzed-dehydrocondensation product thereof: X13-mR1mSiR2SiR3nX23-n (I) wherein R1 and R3 represent a hydrogen atom or a monovalent substituent; R2 represents a divalent group having an alicyclic structure with four carbon atoms or a derivative of the divalent group; X1 and X2 represent a hydrolysable group; and m and n are an integer of from 0 to 2.
摘要翻译： 根据本发明的一个方面，提供一种成膜用组合物，其包含通式（I）表示的化合物或其水解脱氢产物：X13-mR1mSiR2SiR3nX23-n（Ⅰ），其中R1和R3表示 氢原子或一价取代基; R2表示具有四个碳原子的脂环结构或二价基团的衍生物的二价基团; X1和X2表示可水解基团; m和n为0〜2的整数。
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公开(公告)号：US09153746B2
公开(公告)日：2015-10-06
申请号：US13601568
申请日：2012-08-31
申请人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
发明人： Akihiro Kojima , Yosuke Akimoto , Hideyuki Tomizawa , Hideko Mukaida , Miyoko Shimada , Yoshiaki Sugizaki , Hideto Furuyama
CPC分类号： H01L33/486 , H01L33/387 , H01L33/62
摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.
摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。
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公开(公告)号：US08957402B2
公开(公告)日：2015-02-17
申请号：US13597096
申请日：2012-08-28
IPC分类号： H01L29/06
CPC分类号： H01L33/12 , H01L33/0025 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/32 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/54
摘要： According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.
摘要翻译： 根据一个实施例，半导体发光器件包括第一氮化物半导体层，氮化物半导体发光层，第二氮化物半导体层，p侧电极和n侧电极。 氮化物半导体发光层设置在第一氮化物半导体层的第二面的p侧区域上。 第二氮化物半导体层设置在氮化物半导体发光层上。 p侧电极设置在第二氮化物半导体层上。 n侧电极设置在第一氮化物半导体层的第二面的n侧区域上。 氮化物半导体发光层在第一氮化物半导体层的一侧具有第一凹凸面，在第二氮化物半导体层的侧面具有第二凹凸面。
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公开(公告)号：US08907357B2
公开(公告)日：2014-12-09
申请号：US13597055
申请日：2012-08-28
IPC分类号： H01L29/18
CPC分类号： H01L33/42 , H01L25/0753 , H01L27/156 , H01L33/486 , H01L33/507 , H01L33/508 , H01L33/52 , H01L33/62 , H01L2224/16 , H01L2933/0091
摘要： According to one embodiment, a light emitting module includes a mounting substrate, a plurality of light emitting chips, a transparent layer, and a phosphor layer. The transparent layer is provided between the plurality of light emitting chips on the mounting face and on the light emitting chip. The transparent layer has a first transparent body and a scattering agent dispersed at least in the first transparent body between the plurality of light emitting chips. The scattering agent has a different refraction index from a refraction index of the first transparent body. The phosphor layer is provided on the transparent layer. The light emitting chip includes a semiconductor layer, a p-side electrode, an n-side electrode, a p-side external terminal, and an n-side external terminal.
摘要翻译： 根据一个实施例，发光模块包括安装基板，多个发光芯片，透明层和荧光体层。 透明层设置在安装面上的多个发光芯片和发光芯片之间。 透明层具有至少分散在多个发光芯片之间的第一透明体中的第一透明体和散射剂。 散射剂具有与第一透明体的折射率不同的折射率。 荧光体层设置在透明层上。 发光芯片包括半导体层，p侧电极，n侧电极，p侧外部端子和n侧外部端子。
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