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    SEMICONDUCTOR LIGHT EMITTING DEVICE
    1.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号：US20130285064A1

    公开(公告)日：2013-10-31

    申请号：US13598504

    申请日：2012-08-29

    申请人： Akihiro KOJIMA ,  Hideto FURUYAMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA ,  Yoshiaki SUGIZAKI

    发明人： Akihiro KOJIMA ,  Hideto FURUYAMA ,  Miyoko SHIMADA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA ,  Yoshiaki SUGIZAKI

    IPC分类号： H01L33/44 ,  H01L33/32

    CPC分类号： H01L33/44 ,  H01L33/486 ,  H01L33/50

    摘要： According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a p-side electrode, an n-side electrode, a phosphor layer, and a transparent film. The semiconductor layer has a first face, a second face opposite to the first face, and a light emitting layer. The p-side electrode is provided on the second face in an area including the light emitting layer. The n-side electrode is provided on the second face in an area not including the light emitting layer. The phosphor layer is provided on the first face. The phosphor layer includes a transparent resin and phosphor dispersed in the transparent resin. The transparent film is provided on the phosphor layer and has an adhesiveness lower than an adhesiveness of the transparent resin.

    摘要翻译： 根据一个实施例，半导体发光器件包括半导体层，p侧电极，n侧电极，荧光体层和透明膜。 半导体层具有第一面，与第一面相反的第二面和发光层。 p侧电极设置在包括发光层的区域的第二面上。 n侧电极设置在不包括发光层的区域的第二面上。 磷光体层设置在第一面上。 荧光体层包括分散在透明树脂中的透明树脂和荧光体。 透明膜设置在荧光体层上，粘合性低于透明树脂的粘合性。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    2.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号：US20130313588A1

    公开(公告)日：2013-11-28

    申请号：US13601568

    申请日：2012-08-31

    申请人： Akihiro KOJIMA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA ,  Hideko MUKAIDA ,  Miyoko SHIMADA ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

    发明人： Akihiro KOJIMA ,  Yosuke AKIMOTO ,  Hideyuki TOMIZAWA ,  Hideko MUKAIDA ,  Miyoko SHIMADA ,  Yoshiaki SUGIZAKI ,  Hideto FURUYAMA

    IPC分类号： H01L33/52

    CPC分类号： H01L33/486 ,  H01L33/387 ,  H01L33/62

    摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

    摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。