公开(公告)号：US20110204458A1

公开(公告)日：2011-08-25

申请号：US13099737

申请日：2011-05-03

申请人： Haruo FURUTA ,  Ryoji Matsuda ,  Shuichi Ueno ,  Takeharu Kuroiwa

发明人： Haruo FURUTA ,  Ryoji Matsuda ,  Shuichi Ueno ,  Takeharu Kuroiwa

IPC分类号： H01L29/82 ,  H01L43/12

CPC分类号： H01L43/08 ,  B82Y10/00 ,  H01L27/228 ,  H01L43/12

摘要： The semiconductor device which has a memory cell including the TMR film with which memory accuracy does not deteriorate, and its manufacturing method are obtained. A TMR element (a TMR film, a TMR upper electrode) is selectively formed in the region which corresponds in plan view on a TMR lower electrode in a part of formation area of a digit line. A TMR upper electrode is formed by 30-100 nm thickness of Ta, and functions also as a hard mask at the time of a manufacturing process. The interlayer insulation film formed from LT-SiN on the whole surface of a TMR element and the upper surface of a TMR lower electrode is formed, and the interlayer insulation film which covers the whole surface comprising the side surface of a TMR lower electrode, and includes LT-SiN is formed. The interlayer insulation film which covers the whole surface and includes SiO2 is formed.

摘要翻译： 具有包含记忆精度不劣化的TMR膜的存储单元的半导体装置及其制造方法。 在数字线的形成区域的一部分的TMR下电极的平面图中对应的区域选择性地形成TMR元件（TMR膜，TMR上电极）。 TMR上电极由Ta的30-100nm厚度形成，并且在制造过程中也用作硬掩模。 在TMR元件的整个表面和TMR下电极的整个表面上形成由LT-SiN形成的层间绝缘膜，覆盖包括TMR下电极的侧表面的整个表面的层间绝缘膜和 包括LT-SiN。 形成覆盖整个表面并包含SiO 2的层间绝缘膜。

公开(公告)号：US08013407B2

公开(公告)日：2011-09-06

申请号：US12399760

申请日：2009-03-06

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

摘要翻译： 提供了一种在写特性上稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

公开(公告)号：US20090250776A1

公开(公告)日：2009-10-08

申请号：US12399760

申请日：2009-03-06

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

摘要翻译： 提供了一种写入特性稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

公开(公告)号：US20080168649A1

公开(公告)日：2008-07-17

申请号：US12076151

申请日：2008-03-14

申请人： Shinroku Maejima ,  Shuichi Ueno ,  Takashi Takenaga ,  Takeharu Kuroiwa

发明人： Shinroku Maejima ,  Shuichi Ueno ,  Takashi Takenaga ,  Takeharu Kuroiwa

IPC分类号： G11B5/127

CPC分类号： H01L43/12 ,  G11C11/16 ,  H01L27/228 ,  Y10T29/49041 ,  Y10T29/49048

摘要： A photolithographic process using an X-direction delimiting mask (S11) for aligning respective side faces of a TMR element (1) and a strap (5) situated in a negative X side is performed, to shape the TMR element (1) and the strap (5) into desired configurations. The X-direction delimiting mask (S11) includes a straight edge and is disposed such that the straight edge is parallel to a Y direction and crosses both the TMR element (1) and the strap (5) in plan view. In use of the X-direction delimiting mask (S11), respective portions of the TMR element (1) and the strap (5) situated in a positive X side relative to the straight edge in plan view are covered with the X-direction delimiting mask (S11).

摘要翻译： 执行使用用于对准位于负X侧的TMR元件（1）和带（5）的各个侧面的X方向限制掩模（S11）的光刻工艺，以使TMR元件（1）和 带（5）成为所需的配置。 X方向限制掩模（S11）包括直边并且被设置为使得直边平行于Y方向，并且在平面图中与TMR元件（1）和带（5）交叉。 在使用X方向限制掩模（S11）时，在平面图中相对于直边缘位于正X侧的TMR元件（1）和带子（5）的各个部分被X方向 限定掩模（S11）。

公开(公告)号：US08269295B2

公开(公告)日：2012-09-18

申请号：US13088725

申请日：2011-04-18

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

IPC分类号： H01L29/82 ,  G11C11/02

CPC分类号： H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

摘要翻译： 提供了一种写入特性稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

公开(公告)号：US20110193185A1

公开(公告)日：2011-08-11

申请号：US13088725

申请日：2011-04-18

申请人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

发明人： Takashi Takenaga ,  Takeharu Kuroiwa ,  Hiroshi Takada ,  Shuichi Ueno ,  Kiyoshi Kawabata

IPC分类号： H01L29/82

CPC分类号： H01L27/228 ,  G11C11/16 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L43/08

摘要： There is provided a magnetic memory device stable in write characteristics. The magnetic memory device has a recording layer. The planar shape of the recording layer has the maximum length in the direction of the easy-axis over a primary straight line along the easy-axis, and is situated over a length smaller than the half of the maximum length in the direction perpendicular to the easy-axis, and on the one side and on the other side of the primary straight line respectively, the planar shape has a first part situated over a length in the direction perpendicular to the easy-axis, and a second part situated over a length smaller than the length in the direction perpendicular to the easy-axis. The outer edge of the first part includes only a smooth curve convex outwardly of the outer edge.

摘要翻译： 提供了一种写入特性稳定的磁存储器件。 磁存储器件具有记录层。 记录层的平面形状沿着容易轴在易于轴的方向上在主直线上具有最大长度，并且位于比垂直于该方向的方向上的最大长度的一半长度 分别在主直线的一侧和另一侧上，平面形状具有位于垂直于易轴的方向上的长度的第一部分，以及位于长度方向上的第二部分 小于垂直于易轴方向的长度。 第一部分的外边缘仅包括从外边缘向外凸出的平滑曲线。

公开(公告)号：US07906346B2

公开(公告)日：2011-03-15

申请号：US12187846

申请日：2008-08-07

申请人： Shuichi Ueno ,  Haruo Furuta ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Shin Hasegawa ,  Shinya Hirano ,  Hiroyuki Chibahara ,  Hiroshi Oshita

发明人： Shuichi Ueno ,  Haruo Furuta ,  Ryoji Matsuda ,  Tatsuya Fukumura ,  Shin Hasegawa ,  Shinya Hirano ,  Hiroyuki Chibahara ,  Hiroshi Oshita

IPC分类号： H01L21/00

CPC分类号： H01L43/12 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.

摘要翻译： 一种制造包括TMR元件的磁存储器件的方法，所述方法包括：形成下布线层的步骤; 在下布线层上形成层间绝缘层的步骤; 在所述层间绝缘层中形成开口以使所述下部布线层露出的步骤; 形成阻挡金属层以使得层间绝缘层和开口的内表面被覆盖的步骤; 在所述阻挡金属层上形成金属层以使得所述开口嵌入的步骤; 抛光步骤，通过使用阻挡金属层作为阻挡层进行研磨来去除阻挡金属层上的金属层，使得形成包含金属层的布线层嵌入开口和阻挡金属层中; 以及在所述布线层上制造TMR元件的元件制造步骤。

公开(公告)号：US20090237989A1

公开(公告)日：2009-09-24

申请号：US12476536

申请日：2009-06-02

申请人： Yoshinori OKUMURA ,  Shuichi Ueno ,  Haruo Furuta

发明人： Yoshinori OKUMURA ,  Shuichi Ueno ,  Haruo Furuta

IPC分类号： G11C11/14

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (1/3)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.

摘要翻译： 位线的宽度和厚度分别表示为W1和T1，数字线的厚度表示为T2，从数字线的中心到厚度方向的中心到自由层的中心的距离 的厚度方向上的MTJ元件表示为L1。 数字线的宽度表示为W2，从厚度方向的位线的中心到厚度方向的MTJ元件的自由层的中心的距离表示为L2。 距离L1和L2以及横截面积S1和S2以如下方式设定：当L1 / L2> = 1时，（1/3）（L1 / L2）<= S2 / S1 <= 1，并且当L1 / L2 <= 1时，满足1 <= S2 / S1 <= 3（L1 / L2）的关系。

公开(公告)号：US20080266939A1

公开(公告)日：2008-10-30

申请号：US12213505

申请日：2008-06-20

申请人： Yoshinori Okumura ,  Shuichi Ueno ,  Haruo Furuta

发明人： Yoshinori Okumura ,  Shuichi Ueno ,  Haruo Furuta

IPC分类号： G11C11/02

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.

摘要翻译： 位线的宽度和厚度分别表示为W 1和T 1，数字线的厚度表示为T 2，并且从数字线的中心到厚度方向的中心的距离 在厚度方向上的MTJ元件的自由层表示为L 1。 数字线的宽度表示为W 2，并且从厚度方向的位线的中心到厚度方向上的MTJ元件的自由层的中心的距离表示为L 2。 距离L 1和L 2以及横截面积S 1和S 2被设定为当L 1 / L 2> = 1时，关于（1/3）（L 1 / L 2 ）满足<= S 2 / S 1 <= 1，并且当L 1 / L 2 <= 1时，满足1 <= S 2 / S 1 <= 3（L 1 / L 2）的关系。

公开(公告)号：US07554837B2

公开(公告)日：2009-06-30

申请号：US12213505

申请日：2008-06-20

申请人： Yoshinori Okumura ,  Shuichi Ueno ,  Haruo Furuta

发明人： Yoshinori Okumura ,  Shuichi Ueno ,  Haruo Furuta

IPC分类号： G11C11/14 ,  G11C11/10

CPC分类号： H01L43/08 ,  B82Y10/00 ,  G11C11/15 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/228

摘要： A width and a thickness of a bit line are represented as W1 and T1, respectively, a thickness of a digit line is represented as T2, and a distance from a center of the digit line in a thickness direction to a center of a free layer of an MTJ element in the thickness direction is represented as L1. A width of the digit line is represented as W2, and a distance from a center of the bit line in the thickness direction to the center of the free layer of the MTJ element in the thickness direction is represented as L2. The distances L1 and L2 and the cross-sectional areas S1 and S2 are set in such a manner that when L1/L2≧1, a relation of (⅓)·(L1/L2)≦S2/S1≦1 is satisfied and when L1/L2≦1, a relation of 1≦S2/S1≦3(L1/L2) is satisfied.

摘要翻译： 位线的宽度和厚度分别表示为W1和T1，数字线的厚度表示为T2，从数字线的中心到厚度方向的中心到自由层的中心的距离 的厚度方向上的MTJ元件表示为L1。 数字线的宽度表示为W2，从厚度方向的位线的中心到厚度方向的MTJ元件的自由层的中心的距离表示为L2。 距离L1和L2以及横截面积S1和S2以如下方式设定：当L1 / L2> = 1时，（1/3）（L1 / L2）<= S2 / S1 <= 1，并且当L1 / L2 <= 1时，满足1 <= S2 / S1 <= 3（L1 / L2）的关系。