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1.发明申请METHOD FOR MANUFACTURING A MAGNETIC MEMORY DEVICE AND MAGNETIC MEMORY DEVICE 审中-公开用于制造磁记录装置和磁记忆装置的方法公开(公告)号：US20110121419A1
公开(公告)日：2011-05-26
申请号：US13021079
申请日：2011-02-04
申请人： Shuichi UENO , Haruo Furuta , Ryoji Matsuda , Tatsuya Fukumura , Shin Hasegawa , Shinya Hirano , Hiroyuki Chibahara , Hiroshi Oshita
发明人： Shuichi UENO , Haruo Furuta , Ryoji Matsuda , Tatsuya Fukumura , Shin Hasegawa , Shinya Hirano , Hiroyuki Chibahara , Hiroshi Oshita
IPC分类号： H01L29/82
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.
摘要翻译： 一种制造包括TMR元件的磁存储器件的方法，所述方法包括：形成下布线层的步骤; 在下布线层上形成层间绝缘层的步骤; 在所述层间绝缘层中形成开口以使所述下部布线层露出的步骤; 形成阻挡金属层以使得层间绝缘层和开口的内表面被覆盖的步骤; 在所述阻挡金属层上形成金属层以使得所述开口嵌入的步骤; 抛光步骤，通过使用阻挡金属层作为阻挡层进行研磨来去除阻挡金属层上的金属层，使得形成包含金属层的布线层嵌入开口和阻挡金属层中; 以及在所述布线层上制造TMR元件的元件制造步骤。
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公开(公告)号：US20110049657A1
公开(公告)日：2011-03-03
申请号：US12870486
申请日：2010-08-27
CPC分类号： H01L27/105 , H01L27/228 , H01L43/08 , H01L43/12
摘要： There are provided a semiconductor device in which short circuit failures in magnetic resistor elements and the like are reduced, and a method of manufacturing the same. An interlayer insulating film in which memory cells are formed is formed such that the upper surface of the portion of the interlayer insulating film located in a memory cell region where the magnetic resistor elements are formed is at a position lower than that of the upper surface of the portion of the interlayer insulating film located in a peripheral region. Another interlayer insulating film is formed so as to cover the magnetic resistor elements. In the another interlayer insulating film, formed are bit lines electrically coupled to the magnetic resistor elements. Immediately below the magnetic resistor elements, formed are digit lines.
摘要翻译： 提供一种半导体器件，其中减小了电阻元件等中的短路故障及其制造方法。 其中形成存储单元的层间绝缘膜形成为使得位于形成有磁阻元件的存储单元区域中的层间绝缘膜的部分的上表面位于比上表面的位置低的位置 层间绝缘膜的位于周边区域的部分。 形成另一层间绝缘膜以覆盖磁阻元件。 在另一个层间绝缘膜中，形成电耦合到磁阻元件的位线。 在磁阻电阻元件的正下方形成数位线。
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公开(公告)号：US20230031819A1
公开(公告)日：2023-02-02
申请号：US17871257
申请日：2022-07-22
发明人： Jun MASUDA , Kenji SHIMIZU , Yuji MORI , Hisao HISHIKAWA , Naofumi MATSUSHITA , Shunsuke TANAKA , Yuki INOUE , Fuminori IMAIZUMI , Junya NAKAMURA , Tomokazu UCHIYAMA , Shinji FUJINO , Motohiro KAKUREYA , Kohei YAGI , Shinya HIRANO , Hitoshi FUJIYAMA
IPC分类号： B25J13/08
摘要： There are provided a positioning method and a positioning device that can position workpieces by a simple method and configuration. A positioning method includes: gripping at least one of first and second workpieces; obtaining point group data of the at least one gripped workpiece of the first and second workpieces; calculating a translation matrix of shape fitting point group data obtained by adjusting a position of the point group data to reference data in a position adjustment state of the first and second workpieces; calculating an inverse matrix based on the translation matrix; and positioning the first and second workpieces by moving the at least one gripped workpiece of the first and second workpieces based on at least one of the translation matrix and the inverse matrix.
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公开(公告)号：US20230302651A1
公开(公告)日：2023-09-28
申请号：US18187748
申请日：2023-03-22
发明人： Yu Okumura , Naofumi Matsushita , Junya Nakamura , Tomokazu Uchiyama , Shinji Fujino , Motohiro Kakureya , Kohei Yagi , Shinya Hirano , Hitoshi Fujiyama
CPC分类号： B25J9/1692 , G01B11/2504 , B25J9/1694
摘要： There are provided a target detection method and detection device that include a calibration function and can maintain detection accuracy of a target irrespectively of a change (such as a temperature) in external environment.
A target detection method includes: a step of calculating a quantitative value; a step of, at a first position information generation device, measuring a first target; a step of, at a second position information generation device, measuring a second target; a step of calculating a position of the second target using the first position information generation device as a position reference based on a measurement value of the first target obtained by the first position information generation device, a measurement value of the second target obtained by the second position information generation device, and the quantitative value; and a step of calibrating the quantitative value before measuring a third target using the second position information generation device.-
公开(公告)号：US20180304466A1
公开(公告)日：2018-10-25
申请号：US15954092
申请日：2018-04-16
CPC分类号： B25J9/1692 , B25J9/0087 , B25J9/1682 , B25J9/1697 , Y10S901/09 , Y10S901/47
摘要： A calibration system that calibrates robots installed in a process includes: a reference measuring element; a flange measuring element attached to a flange provided at an arm tip of each robot; a fixed measuring device configured to measure the flange measuring element of each robot and the reference measuring element; and a controller configured to control the robots, calculate a position and attitude relation between the flange measuring element of each robot and the reference measuring element based on a measured result measured by the fixed measuring device, and calculate an error between a design installation position and attitude of each robot and an actual installation position and attitude of the robot by using the measured position and attitude relation and position and attitude data of the flange measuring element in a robot coordinate system at the time when the robot has been measured by the fixed measuring device.
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公开(公告)号：US20110062539A1
公开(公告)日：2011-03-17
申请号：US12885093
申请日：2010-09-17
申请人： Ryoji MATSUDA , Motoi Ashida , Shuichi Ueno , Shoichi Fukui , Shinya Hirano , Seiji Muranaka , Kazuyuki Omori
发明人： Ryoji MATSUDA , Motoi Ashida , Shuichi Ueno , Shoichi Fukui , Shinya Hirano , Seiji Muranaka , Kazuyuki Omori
CPC分类号： H01L27/228 , B82Y25/00 , H01F10/131 , H01F10/14 , H01F10/142 , H01F10/145 , H01F10/20 , H01F10/22 , H01F10/3254 , H01L21/76807 , H01L21/76816 , H01L21/76844 , H01L27/105 , H01L43/08 , H01L43/12
摘要： To provide a semiconductor device in which the deterioration of the rewrite property is suppressed. In a memory cell region, magnetoresistive elements in a semiconductor magnetic-storage device are formed in an array shape in a mode that the magnetoresistive elements are arranged at portions where digit lines extending in one direction intersect bit lines extending in the direction approximately orthogonal to the digit lines. The digit line and the bit line have such a wiring structure constituted by covering a copper film to be a wiring main body with a cladding layer. One end side of the magnetoresistive element is electrically coupled to the bit line via a top via formed from a non-magnetic material.
摘要翻译： 提供抑制重写特性劣化的半导体器件。 在存储单元区域中，半导体磁存储器件中的磁阻元件形成为阵列形状，其方式是将磁阻元件布置在沿一个方向延伸的数字线与沿大致垂直于 数字线。 数字线和位线具有这样一种布线结构，其通过用覆盖层覆盖作为布线主体的铜膜而构成。 磁阻元件的一端侧经由由非磁性材料形成的顶部通孔电耦合到位线。
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7.发明授权公开(公告)号：US07906346B2
公开(公告)日：2011-03-15
申请号：US12187846
申请日：2008-08-07
申请人： Shuichi Ueno , Haruo Furuta , Ryoji Matsuda , Tatsuya Fukumura , Shin Hasegawa , Shinya Hirano , Hiroyuki Chibahara , Hiroshi Oshita
发明人： Shuichi Ueno , Haruo Furuta , Ryoji Matsuda , Tatsuya Fukumura , Shin Hasegawa , Shinya Hirano , Hiroyuki Chibahara , Hiroshi Oshita
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.
摘要翻译： 一种制造包括TMR元件的磁存储器件的方法，所述方法包括：形成下布线层的步骤; 在下布线层上形成层间绝缘层的步骤; 在所述层间绝缘层中形成开口以使所述下部布线层露出的步骤; 形成阻挡金属层以使得层间绝缘层和开口的内表面被覆盖的步骤; 在所述阻挡金属层上形成金属层以使得所述开口嵌入的步骤; 抛光步骤，通过使用阻挡金属层作为阻挡层进行研磨来去除阻挡金属层上的金属层，使得形成包含金属层的布线层嵌入开口和阻挡金属层中; 以及在所述布线层上制造TMR元件的元件制造步骤。
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8.发明申请公开(公告)号：US20090039451A1
公开(公告)日：2009-02-12
申请号：US12187846
申请日：2008-08-07
申请人： Shuichi UENO , Haruo Furuta , Ryoji Matsuda , Tatsuya Fukumura , Shin Hasegawa , Shinya Hirano , Hiroyuki Chibahara , Hiroshi Oshita
发明人： Shuichi UENO , Haruo Furuta , Ryoji Matsuda , Tatsuya Fukumura , Shin Hasegawa , Shinya Hirano , Hiroyuki Chibahara , Hiroshi Oshita
IPC分类号： H01L29/82 , H01L23/52 , H01L21/00 , H01L21/4763
CPC分类号： H01L43/12 , G11C11/161 , G11C11/1659 , G11C11/1675 , H01L27/228
摘要： A method for manufacturing a magnetic memory device which includes a TMR element, and the method includes: a step of forming a lower wiring layer; a step of forming an interlayer insulating layer on the lower wiring layer; a step of forming an opening in the interlayer insulating layer so that the lower wiring layer is exposed; a step of forming a barrier metal layer so that the interlayer insulating layer and an inner surface of the opening are covered; a step of forming a metal layer on the barrier metal layer so that the opening is embedded; a polishing step of removing the metal layer on the barrier metal layer through polishing using the barrier metal layer as a stopper so that a wiring layer that includes a metal layer being embedded in the opening and the barrier metal layer is formed; and an element fabricating step of fabricating a TMR element on the wiring layer.
摘要翻译： 一种制造包括TMR元件的磁存储器件的方法，所述方法包括：形成下布线层的步骤; 在下布线层上形成层间绝缘层的步骤; 在所述层间绝缘层中形成开口以使所述下部布线层露出的步骤; 形成阻挡金属层以使得层间绝缘层和开口的内表面被覆盖的步骤; 在所述阻挡金属层上形成金属层以使得所述开口嵌入的步骤; 抛光步骤，通过使用阻挡金属层作为阻挡层进行研磨来去除阻挡金属层上的金属层，使得形成包含金属层的布线层嵌入开口和阻挡金属层中; 以及在所述布线层上制造TMR元件的元件制造步骤。
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公开(公告)号：US06875326B2
公开(公告)日：2005-04-05
申请号：US10319695
申请日：2002-12-16
申请人： Hiroshi Inaba , Shinji Sasaki , Shinya Hirano , Kenji Furusawa , Minoru Yamasaka , Atsushi Amatatsu , Shi Xu
发明人： Hiroshi Inaba , Shinji Sasaki , Shinya Hirano , Kenji Furusawa , Minoru Yamasaka , Atsushi Amatatsu , Shi Xu
IPC分类号： H05H1/24 , B01J19/08 , C23C14/32 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/302 , C23C14/00 , C23C16/00
CPC分类号： H01J37/32055 , C23C14/325 , H01J37/3266
摘要： A plasma processing device include a plasma generation unit for generating plasma by using a cathodic arc discharge, first and second magnetic field ducts arranged in a row for transporting the plasma with one end of the row being connected to the plasma generation unit and a processing chamber connected to the other end of the row unit and having a stage for holding a substrate to be processed. A shutter is provided for covering the plasma during a period of a predetermined time after start of arc discharge or during a period of predetermined time before end of arc discharge. The shutter is disposed between the first magnetic field duct and the substrate to be processed, and is movable. The shutter is capable of being supplied with a voltage, and is kept in a state so as to be electrically insulated from the processing chamber.
摘要翻译： 等离子体处理装置包括：通过使用阴极电弧放电来产生等离子体的等离子体生成单元，排列成一行的第一和第二磁场导管，用于输送等离子体，该等离子体的一端与等离子体产生单元连接;处理室 连接到行单元的另一端并且具有用于保持要处理的基板的台。 在电弧放电开始之后的预定时间期间或在电弧放电结束之前的预定时间段期间，提供用于覆盖等离子体的快门。 快门设置在第一磁场通道和待处理基板之间，并且是可移动的。 快门能够被提供电压，并且保持在与处理室电绝缘的状态。
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公开(公告)号：US20230306634A1
公开(公告)日：2023-09-28
申请号：US18124075
申请日：2023-03-21
发明人： Yu OKUMURA , Naofumi Matsushita , Junya Nakamura , Tomokazu Uchiyama , Shinji Fujino , Motohiro Kakureya , Kohei Yagi , Shinya Hirano , Hitoshi Fujiyama
IPC分类号： G06T7/73
CPC分类号： G06T7/74 , G06T7/75 , G06T2207/30164
摘要： There is provided a target detection method and detection device that can detect a target by a simple method and configuration.
A target detection method includes: a step of, at a first position information generation device, measuring a position and a posture of a first target; a step of, at a second position information generation device, measuring the position and the posture of the first target; a step of calculating a position and a posture of one of the first position information generation device and the second position information generation device with respect to other one of the first position information generation device and the second position information generation device based on a difference between the position and the posture of the first target measured by the first position information generation device, and the position and the posture of the first target measured by the second position information generation device; and a step of, at the second position information generation device, measuring a position and a posture of a second target using the position and the posture of the one of the first position information generation device and the second position information generation device with respect to the other one of the first position information generation device and the second position information generation device.
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