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公开(公告)号：US08154060B2
公开(公告)日：2012-04-10
申请号：US12183129
申请日：2008-07-31
申请人： Hayato Nakashima , Ryu Shimizu
发明人： Hayato Nakashima , Ryu Shimizu
IPC分类号： H01L31/062
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/148
摘要： This image sensor is so formed as to control at least either the potential of a portion of a transfer channel corresponding to a third electrode or the potential of another portion of the transfer channel corresponding to a fourth electrode to be lower than the potentials of portions of the transfer channel corresponding to a first electrode and a second electrode respectively in a signal charge transferring operation and a signal charge increasing operation.
摘要翻译： 该图像传感器被形成为控制对应于第三电极的传输通道的一部分的电位或对应于第四电极的传输通道的另一部分的电位的电位的至少一个电位低于 分别对应于第一电极和第二电极的传输通道在信号电荷转移操作和信号电荷增加操作中。
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公开(公告)号：US07952121B2
公开(公告)日：2011-05-31
申请号：US12197515
申请日：2008-08-25
申请人： Mamoru Arimoto , Hayato Nakashima , Kaori Misawa , Ryu Shimizu
发明人： Mamoru Arimoto , Hayato Nakashima , Kaori Misawa , Ryu Shimizu
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L29/76825
摘要： An image sensor includes a charge storage portion for storing and transferring signal charges, a first electrode for forming an electric field storing the signal charges in the charge storage portion, a charge increasing portion for increasing the signal charges stored in the charge storage portion and a second electrode for forming another electric field increasing the signal charges in the charge increasing portion, wherein the quantity of the signal charges storable in the charge storage portion is not less than the quantity of the signal charges storable in the charge increasing portion.
摘要翻译： 图像传感器包括用于存储和传送信号电荷的电荷存储部分，用于形成存储电荷存储部分中的信号电荷的电场的第一电极，用于增加存储在电荷存储部分中的信号电荷的电荷增加部分，以及 第二电极，用于形成增加电荷增加部分中的信号电荷的另一电场，其中可存储在电荷存储部分中的信号电荷的量不小于可存储在电荷增加部分中的信号电荷的量。
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公开(公告)号：US20090316032A1
公开(公告)日：2009-12-24
申请号：US12479325
申请日：2009-06-05
申请人： Kaori Misawa , Mamoru Arimoto , Hayato Nakashima , Ryu Shimizu
发明人： Kaori Misawa , Mamoru Arimoto , Hayato Nakashima , Ryu Shimizu
CPC分类号： H01L27/14689 , H01L27/14609 , H01L27/14612 , H01L27/14643 , H04N5/374
摘要： An image sensor includes an increase portion for impact-ionizing and increasing signal charges, a charge increasing electrode for applying a voltage increasing the signal charges to the increase portion and an insulating film provided between the charge increasing electrode and the increase portion, wherein the insulating film includes a first insulating film made of a thermal oxide film and a second insulating film made of an oxide film, formed on the first insulating film.
摘要翻译： 图像传感器包括用于冲击电离和增加信号电荷的增加部分，用于将增加信号电荷的电压施加到增加部分的电荷增加电极和设置在电荷增加电极与增加部分之间的绝缘膜，其中绝缘 膜包括由第一绝缘膜形成的由热氧化膜制成的第一绝缘膜和由氧化膜制成的第二绝缘膜。
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公开(公告)号：US07821042B2
公开(公告)日：2010-10-26
申请号：US11831356
申请日：2007-07-31
申请人： Hayato Nakashima , Ryu Shimizu
发明人： Hayato Nakashima , Ryu Shimizu
IPC分类号： H01L29/768 , H01L27/148 , H01L29/66
CPC分类号： H01L27/14831 , H04N5/3559 , H04N5/37452
摘要： An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.
摘要翻译： 成像装置包括用于产生存储信号电荷的电场的第一电极，用于乘以存储的信号电荷的电荷倍增部分，用于产生电荷倍增部分中的电场的第二电极，用于转换信号电荷的电压转换部分 设置在第一电极和电压转换部之间的电压，用于将信号电荷传送到电压转换部的第三电极，其中第二电极设置在与第三电极和电压转换部相对的一侧， 到第一电极。
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公开(公告)号：US20090315086A1
公开(公告)日：2009-12-24
申请号：US12486495
申请日：2009-06-17
申请人： Mamoru Arimoto , Kaori Misawa , Hayato Nakashima , Ryu Shimizu
发明人： Mamoru Arimoto , Kaori Misawa , Hayato Nakashima , Ryu Shimizu
IPC分类号： H01L31/112 , H01L31/101
CPC分类号： H01L27/14603 , H01L27/14609
摘要： An image sensor includes a first electrode for applying a voltage to a charge storage portion, a second electrode for applying a voltage to a charge increasing portion, a third electrode provided between the first electrode and the second electrode and an impurity region of a first conductive type for forming a path through which the signal charges are transferred, wherein an impurity concentration of a region of the impurity region corresponding to a portion located under the second electrode is higher than an impurity concentration of a region of the impurity region corresponding to a portion located under the third electrode.
摘要翻译： 图像传感器包括用于向电荷存储部分施加电压的第一电极，用于向电荷增加部分施加电压的第二电极，设置在第一电极和第二电极之间的第三电极和第一导电的杂质区域 用于形成传送信号电荷的路径的类型，其中对应于位于第二电极下方的部分的杂质区域的杂质浓度高于对应于部分的杂质区域的杂质浓度 位于第三电极下。
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公开(公告)号：US20090134438A1
公开(公告)日：2009-05-28
申请号：US12276648
申请日：2008-11-24
申请人： Mamoru Arimoto , Ryu Shimizu , Hayato Nakashima , Kaori Misawa
发明人： Mamoru Arimoto , Ryu Shimizu , Hayato Nakashima , Kaori Misawa
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/14806
摘要： A CMOS image sensor includes an impurity region provided under at least the first electrode, the second electrode and the third electrode for forming a path through which the signal charges transfer, wherein the impurity concentration of a region of the impurity region corresponding to a portion located under the first electrode is higher than the impurity concentration of a region of the impurity region corresponding to each of portions located under at least the second electrode and the third electrode.
摘要翻译： CMOS图像传感器包括至少设置在第一电极，第二电极和第三电极之下的杂质区域，用于形成信号电荷转移的路径，其中杂质区域的杂质浓度对应于位于 第一电极下面的杂质浓度高于对应于位于至少第二电极和第三电极下方的各部分的杂质区域的杂质浓度。
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公开(公告)号：US20080048212A1
公开(公告)日：2008-02-28
申请号：US11831356
申请日：2007-07-31
申请人： Hayato Nakashima , Ryu Shimizu
发明人： Hayato Nakashima , Ryu Shimizu
IPC分类号： H01L29/768
CPC分类号： H01L27/14831 , H04N5/3559 , H04N5/37452
摘要： An imaging device includes a first electrode for generating an electric field storing signal charges, a charge multiplication section for multiplying the stored signal charges, a second electrode for generating the electric field in the charge multiplication section, a voltage conversion portion for converting the signal charges into a voltage, a third electrode for transferring the signal charges to the voltage conversion portion, provided between the first electrode and the voltage conversion portion, wherein the second electrode is provided on a side opposite to the third electrode and the voltage conversion portion with respect to the first electrode.
摘要翻译： 成像装置包括用于产生存储信号电荷的电场的第一电极，用于乘以存储的信号电荷的电荷倍增部分，用于产生电荷倍增部分中的电场的第二电极，用于转换信号电荷的电压转换部分 设置在第一电极和电压转换部之间的电压，用于将信号电荷传送到电压转换部的第三电极，其中第二电极设置在与第三电极和电压转换部相对的一侧， 到第一电极。
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公开(公告)号：US20070145427A1
公开(公告)日：2007-06-28
申请号：US11614620
申请日：2006-12-21
IPC分类号： H01L29/768
CPC分类号： H01L27/14806 , H04N5/3597 , H04N5/361 , H04N5/37213
摘要： A solid-state image sensor capable of suppressing generation of cross talk or a dark current and improving transfer efficiency of electrons (signal charge) can be obtained. This solid-state image sensor includes a plurality of pixels and a transfer gate electrode arranged in each of the plurality of pixels. An OFF-state voltage of the transfer gate electrode located on a boundary part between the pixels during an imaging period is lower than an OFF-state voltage of the transfer gate electrode located on the boundary part between the pixels during a transfer period.
摘要翻译： 可以获得能够抑制串扰或暗电流的产生并提高电子传递效率的固态图像传感器（信号电荷）。 该固态图像传感器包括布置在多个像素中的多个像素和传输栅电极。 在成像期间位于像素之间的边界部分上的传输栅电极的截止状态电压低于转印期间位于像素之间的边界部分上的转印栅极的截止电压。
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公开(公告)号：US5748514A
公开(公告)日：1998-05-05
申请号：US564480
申请日：1995-11-29
IPC分类号： H04N19/60 , G06F17/14 , G06T9/00 , H04N1/41 , H04N19/42 , H04N19/423 , H04N19/436 , H04N19/625 , H04N19/85 , H04N19/91
CPC分类号： G06F17/147 , G06T9/007
摘要： Discrete cosine transform circuits suitable for inverse discrete cosine transform (IDCT) or forward discrete cosine transform (FDCT) are disclosed. An IDCT circuit includes a group of multipliers and a group of adders/subtracters. The multipliers receive plural pieces of input data which are externally supplied in parallel. Each multiplier has a cosine constant to multiply to the received input data. The adders/subtracters receive multiplication results from the multipliers and perform addition/subtraction thereon to produce output data, which is the result of inverse discrete cosine transform of the input data. An FDCT circuit includes a group of input-stage adders/subtracters, a group of multipliers, and a group of output-stage adders. The input-stage adders/subtracters perform addition/subtraction on input data which are externally supplied in parallel. Computation results of the input-stage adders/subtracters is supplied to the multipliers. The output-stage adders receive multiplication results from the multipliers and produce output data, which is the result of forward discrete cosine transform of the input data. The discrete cosine transform circuits are particularly suitable for use in MPEG video encoders/decoders.
摘要翻译： 公开了适用于逆离散余弦变换（IDCT）或前向离散余弦变换（FDCT）的离散余弦变换电路。 IDCT电路包括一组乘法器和一组加法器/减法器。 乘法器接收外部并行提供的多个输入数据。 每个乘法器具有乘法常数以乘以接收到的输入数据。 加法器/减法器从乘法器接收乘法结果，并在其上执行加法/减法以产生输出数据，这是输入数据的反离散余弦变换的结果。 FDCT电路包括一组输入级加法器/减法器，一组乘法器和一组输出级加法器。 输入级加法器/减法器对外部并行提供的输入数据执行加法/减法。 输入级加法器/减法器的计算结果提供给乘法器。 输出级加法器从乘法器接收乘法结果并产生输出数据，这是输入数据的前向离散余弦变换的结果。 离散余弦变换电路特别适用于MPEG视频编码器/解码器。
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公开(公告)号：US07172962B2
公开(公告)日：2007-02-06
申请号：US10724111
申请日：2003-12-01
IPC分类号： H01L21/4763 , H01L21/44
CPC分类号： H01L21/7688 , H01L21/7684
摘要： On a substrate are sequentially formed a first interconnection 203, a diffusion barrier film 205 and a second insulating film 207, and on the upper surface of the second insulating film 207 is then formed a sacrificial film 213. Next, a via hole 211 and an interconnection trench 217 are formed, and on the sacrificial film 213 are then formed a barrier metal film 219 and a copper film 221. CMP for removing the extraneous copper film 221 and barrier metal film 219 are conducted in a two-step process, i. e., the first polishing where polishing is stopped on the surface of the barrier metal film 219 and the second polishing where the remaining barrier metal film 219 and the tapered sacrificial film 213 are polished.
摘要翻译： 在衬底上依次形成第一互连203，扩散阻挡膜205和第二绝缘膜207，然后在第二绝缘膜207的上表面上形成牺牲膜213。 接下来，形成通孔211和互连沟槽217，然后在牺牲膜213上形成阻挡金属膜219和铜膜221。 用于去除外部铜膜221和阻挡金属膜219的CMP以两步法进行，即， 即，在阻挡金属膜219的表面上停止抛光的第一次抛光和抛光剩余的阻挡金属膜219和锥形牺牲膜213的第二次抛光。
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