公开(公告)号：US11942481B2

公开(公告)日：2024-03-26

申请号：US17510995

申请日：2021-10-26

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/12 ,  H01L29/04 ,  H01L29/786

CPC classification number: H01L27/1222 ,  H01L21/02592 ,  H01L21/02675 ,  H01L27/1274 ,  H01L29/045 ,  H01L29/78675

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US20230053153A1

公开(公告)日：2023-02-16

申请号：US17877153

申请日：2022-07-29

Applicant: Samsung Display Co., Ltd.

Inventor： Jongjun Baek ,  Jongoh Seo

IPC: H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor capable of minimizing the level of a leakage current and a display apparatus including the same. The thin film transistor includes a buffer layer disposed over a substrate, and a semiconductor layer disposed over the buffer layer, wherein the semiconductor layer includes a first area doped with a first conductivity type and disposed adjacent to an upper surface of the semiconductor layer, a second area spaced apart from the first area, doped with the first conductivity type, and disposed adjacent to the upper surface of the semiconductor layer, a third area doped with a second conductivity type different from the first conductivity type and disposed under the first area, and a fourth area doped with the second conductivity type and disposed under the second area.

公开(公告)号：US11563040B2

公开(公告)日：2023-01-24

申请号：US17030977

申请日：2020-09-24

Applicant: Samsung Display Co., Ltd.

Inventor： Jongoh Seo ,  Gyungmin Baek ,  Byungsoo So

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/66 ,  H01L21/02 ,  H01L27/32

Abstract: A manufacturing method of a display apparatus including preparing a substrate, forming an amorphous silicon layer on the substrate, cleaning the amorphous silicon layer with hydrofluoric acid, crystallizing the amorphous silicon layer into a polycrystalline silicon layer, and forming a metal layer directly on the polycrystalline silicon layer.

公开(公告)号：US11329117B2

公开(公告)日：2022-05-10

申请号：US16877735

申请日：2020-05-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Dongsung Lee ,  Jihwan Kim ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee ,  Yeonhee Jeon ,  Jonghoon Choi ,  Byungkyu Son ,  Seunghyun Jang

IPC: H01L27/32 ,  H01L51/56 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

Abstract: A method of manufacturing a thin film transistor includes: removing an oxide film on a surface of an amorphous silicon layer by performing a surface cleaning; and forming an active layer by performing a heat treatment on the amorphous silicon layer, where the amorphous silicon layer is changed into crystalline silicon by the heat treatment.

公开(公告)号：US11183515B2

公开(公告)日：2021-11-23

申请号：US16821484

申请日：2020-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Dong-Sung Lee ,  Jongoh Seo ,  Byung Soo So ,  Dong-min Lee ,  Yeon Hee Jeon ,  Jonghoon Choi

IPC: H01L21/00 ,  H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/04

Abstract: A display device may include a thin film transistor disposed on a substrate, and a display element electrically connected to the thin film transistor. The thin film transistor may include an active pattern including polycrystalline silicon, a gate insulation layer disposed on the active pattern, and a gate electrode disposed on the gate insulation layer. An average value of grain sizes of the active pattern may be in a range of about 400 nm to about 800 nm. An RMS value of a surface roughness of the active pattern may be about 4 nm or less. A method of manufacturing a polycrystalline silicon layer may include cleaning an amorphous silicon layer with hydrofluoric acid, rinsing the amorphous silicon layer with hydrogenated deionized water, and irradiating the amorphous silicon layer with a laser beam having an energy density of about 440 mJ/cm2 to about 490 mJ/cm2.

公开(公告)号：US10892343B2

公开(公告)日：2021-01-12

申请号：US16157155

申请日：2018-10-11

Applicant: Samsung Display Co., Ltd.

Inventor： Dongsung Lee ,  Cheolho Park ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee

IPC: H01L29/45 ,  H01L29/40 ,  H01L29/49 ,  H01L51/10 ,  H01L27/12

Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.

公开(公告)号：US12002868B2

公开(公告)日：2024-06-04

申请号：US17113777

申请日：2020-12-07

Applicant: Samsung Display Co., Ltd.

Inventor： Dongsung Lee ,  Cheolho Park ,  Jongoh Seo ,  Byungsoo So ,  Dongmin Lee

IPC: H01L29/45 ,  H01L27/12 ,  H01L29/40 ,  H01L29/49 ,  H10K10/82 ,  H10K10/84 ,  H10K71/00 ,  H10K71/20

CPC classification number: H01L29/458 ,  H01L27/124 ,  H01L29/401 ,  H01L29/4908 ,  H10K10/82 ,  H10K10/84 ,  H10K71/236 ,  H10K71/621 ,  Y10S438/937

Abstract: A display device includes: a thin-film transistor on a substrate, the thin-film transistor including on the substrate: an active layer; a gate electrode overlapping the active layer; a source electrode and a drain electrode electrically connected to the active layer and including a first metal material; and a first capping layer which covers each of the source electrode and the drain electrode, the first capping layer having a Young's modulus greater than that of the first metal material.

公开(公告)号：US11961851B2

公开(公告)日：2024-04-16

申请号：US17672574

申请日：2022-02-15

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-min Lee ,  Ji-Hwan Kim ,  Jongoh Seo ,  Byung Soo So ,  Dong-Sung Lee ,  Jonghoon Choi

IPC: G02B27/14 ,  B23K26/53 ,  G02B27/12 ,  H01L21/02 ,  H01L27/12 ,  H01S3/00

CPC classification number: H01L27/1281 ,  B23K26/53 ,  G02B27/126 ,  H01L21/02675 ,  H01S3/005 ,  H01S3/0071 ,  H01L21/02532

Abstract: A laser apparatus includes a laser generator configured to generate a first laser beam proceeding along a first direction, and an inversion module configured to convert the first laser beam to a second laser beam proceeding along the first direction, the inversion module including a splitter configured to form a reflected laser beam by partially reflecting the first laser beam, and a transmitted laser beam by partially transmitting the first laser beam, and a prism configured to reflect the reflected laser beam.

公开(公告)号：US20230395728A1

公开(公告)日：2023-12-07

申请号：US17845301

申请日：2022-06-21

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jongoh Seo ,  Janghyun Kim ,  Jongjun Baek ,  Dongmin Lee

IPC: H01L29/786 ,  H01L29/66 ,  H10K59/121 ,  H10K59/80

CPC classification number: H01L29/78696 ,  H01L29/6675 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/873

Abstract: Provided are a thin-film transistor substrate, a manufacturing method thereof, and a display apparatus. The thin-film transistor substrate includes: a substrate; a buffer layer on the substrate; a semiconductor layer arranged on the buffer layer and including a first conductive area, a second conductive area, and a channel area between the first conductive area and the second conductive area; a first dopant doped in an upper portion of the channel area at a first concentration; a second dopant doped in a lower portion of the channel area at a second concentration and being of a different type from a type of the first dopant; a gate insulating layer covering the semiconductor layer; and a gate electrode overlapping the channel area in a plan view and disposed on the gate insulating layer.

公开(公告)号：US11407061B2

公开(公告)日：2022-08-09

申请号：US16698842

申请日：2019-11-27

Applicant: Samsung Display Co., Ltd.

Inventor： Dong-Sung Lee ,  Dong-min Lee ,  Jongoh Seo ,  Byung Soo So

IPC: B23K26/04 ,  B23K26/0622 ,  H01L21/02 ,  H01L21/20 ,  B23K101/40

Abstract: A laser crystallizing apparatus may include a laser light source, an optical system, and an optical module. The laser light source may generate a laser beam. The optical system may convert the laser beam into a line laser beam. The optical module may disperse energy of the line laser beam in a first direction for generating a dispersed line laser beam. The first direction may be perpendicular to a lengthwise direction of the optical module.