POLARIZING FILM AND DISPLAY DEVICE INCLUDING THE POLARIZING FILM
    13.
    发明申请
    POLARIZING FILM AND DISPLAY DEVICE INCLUDING THE POLARIZING FILM 审中-公开
    极化膜和显示装置,包括极化膜

    公开(公告)号:US20160187548A1

    公开(公告)日:2016-06-30

    申请号:US14722296

    申请日:2015-05-27

    CPC classification number: G02B5/3033

    Abstract: A polarizing film includes a melt-elongation film including a polyolefin selected from a polyethylene-polypropylene copolymer, a mixture of polyethylene and polypropylene, a mixture of polypropylene and a polyethylene-polypropylene copolymer, and a mixture thereof, and a dichroic dye, wherein the polyolefin includes about 0.15 to about 3 percent by weight of ethylene groups.

    Abstract translation: 偏振膜包括熔融延伸膜,其包括选自聚乙烯 - 聚丙烯共聚物,聚乙烯和聚丙烯的混合物,聚丙烯和聚乙烯 - 聚丙烯共聚物的混合物及其混合物和二色性染料的聚烯烃,其中, 聚烯烃包括约0.15至约3重量%的亚乙基。

    LIQUID CRYSTAL DISPLAY
    14.
    发明申请

    公开(公告)号:US20190018281A1

    公开(公告)日:2019-01-17

    申请号:US16032881

    申请日:2018-07-11

    Abstract: A liquid crystal display includes a lower substrate and an upper substrate facing each other, a liquid crystal layer between the lower substrate and the upper substrate, a color conversion layer on the liquid crystal layer, a first polarizing layer and a first phase difference layer between the liquid crystal layer and the color conversion layer, and a second polarizing layer and a second phase difference layer between a light source and the lower substrate, where the first phase difference layer has refractive indexes satisfying Relationship Equation 1, and the second phase difference layer has refractive indexes satisfying Relationship Equation 2.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    16.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号:US20150255649A1

    公开(公告)日:2015-09-10

    申请号:US14582294

    申请日:2014-12-24

    Abstract: A semiconductor device includes a first semiconductor layer including a recess region and protrusions defined by the recessed region, first insulating patterns provided on the protrusions and extending to sidewalls of the protrusions, and a second semiconductor layer to fill the recess region and cover the first insulating patterns. The protrusions includes a first group of protrusions spaced apart from each other in a first direction to constitute a row and a second group of protrusions spaced from the first group of protrusions in a second direction intersecting the first direction and spaced from each other in the first direction to constitute a row. The second group of protrusions are shifted from the first group of protrusions in the first direction.

    Abstract translation: 半导体器件包括:第一半导体层,包括凹陷区域和由凹陷区域限定的突起;设置在突起上并延伸到突起侧壁的第一绝缘图案;以及第二半导体层,用于填充凹陷区域并覆盖第一绝缘体 模式。 突起包括在第一方向上彼此间隔开的第一组突起,以构成一排,并且在与第一方向相交的第二方向上与第一组突起间隔开的第二组突起在第一方向上彼此间隔开 方向构成一排。 第二组突起在第一方向从第一组突起移位。

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