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    Image sensor including a pixel separation structure
    11.
    发明授权
    Image sensor including a pixel separation structure 有权

    公开(公告)号：US12224296B2

    公开(公告)日：2025-02-11

    申请号：US17511754

    申请日：2021-10-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hongki Kim ,  Changrok Moon ,  Taehyong Kim ,  Seungjae Oh ,  Jihyun Kwak

    IPC: H01L27/146

    Abstract: An image sensor includes: a semiconductor substrate that has a first surface and a second surface opposite to each other. The semiconductor substrate includes: a first trench that vertically extends from the first surface of the semiconductor substrate and provides a pixel region, and a second trench that vertically extends from the first surface of the semiconductor substrate and is disposed on the pixel region. The image sensor further includes: a pixel separation structure that vertically extends from the second surface of the semiconductor substrate and overlaps the first trench; and a gap-fill dielectric layer disposed on the first surface of the semiconductor substrate, wherein the gap-fill dielectric layer includes a pixel separation part and a scattering pattern part, wherein the pixel separation part is disposed in the first trench, and the scattering pattern part is disposed in the second trench.

    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME
    12.
    发明申请
    IMAGE SENSOR AND METHOD OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220392941A1

    公开(公告)日：2022-12-08

    申请号：US17721914

    申请日：2022-04-15

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Doowon Kwon ,  Changrok Moon ,  Kyungtae Lim

    IPC: H01L27/146 ,  H04N5/369 ,  H04N5/353 ,  H01L23/00

    Abstract: Provided is an image sensor including a first layer including a first semiconductor substrate including a pixel unit in which a plurality of unit pixels are provided, and a first wiring layer provided on the first semiconductor substrate, a second layer including a second semiconductor substrate on which a plurality of transistors configured to operate a global shutter operation are provided, and a second wiring layer provided on the second semiconductor substrate, and provided on the first layer such that the first wiring layer and the second wiring layer oppose each other in a first direction, a plurality of first bonding structures bonding the first layer to the second layer based on a first bonding metal exposed on a surface of the first wiring layer being in contact with a second bonding metal exposed on a surface of the second wiring layer, a third layer including a third semiconductor substrate on which a logic circuit is provided, and a third wiring layer provided on the third semiconductor substrate, and bonded to the second layer such that the second semiconductor substrate and the third wiring layer oppose each other in the first direction, and a plurality of second bonding structures extending from the second wiring layer, and bonding the second layer to the third layer based on a bonding via penetrating the second semiconductor substrate being in contact with a third bonding metal exposed to a surface of the third wiring layer.

    Light sensor
    15.
    发明授权
    Light sensor 有权

    公开(公告)号：US10050078B2

    公开(公告)日：2018-08-14

    申请号：US15798387

    申请日：2017-10-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Younggu Jin ,  Changrok Moon ,  Duckhyung Lee ,  Seokha Lee

    IPC: H01L27/146 ,  G02B27/10

    CPC classification number: H01L27/14649 ,  G02B27/10 ,  H01L27/1462 ,  H01L27/14627 ,  H01L27/14629 ,  H01L27/1463 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/14685

    Abstract: A first substrate includes a plurality of unit pixel regions. A deep trench isolation structure is disposed in the first substrate and isolates each of the plurality of the unit pixel regions from each other. Each of a plurality of photoelectric converters is disposed in one of the plurality of unit pixel regions. A plurality of micro lenses are disposed on the first substrate. A plurality of light splitters are disposed on the first substrate. Each of the plurality of light splitters is disposed between one of the plurality of micro lenses and one of the plurality of photoelectric converters. Each of a plurality of photoelectric-conversion-enhancing layers is disposed between one of the plurality of light splitters and one of the plurality of photoelectric converters.

    Image sensors including conductive pixel separation structures
    17.
    发明授权
    Image sensors including conductive pixel separation structures 有权
    图像传感器包括导电像素分离结构

    公开(公告)号：US09524995B2

    公开(公告)日：2016-12-20

    申请号：US14191670

    申请日：2014-02-27

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Junemo Koo ,  Namgil Kim ,  Changrok Moon ,  Byungjun Park ,  Jongcheol Shin

    IPC: H01L27/148 ,  H01L27/146

    CPC classification number: H01L27/14689 ,  H01L27/14614 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464

    Abstract: An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed.

    Abstract translation: 图像传感器包括其中具有相邻像素区域和各个光电二极管区域的衬底，以及包括在相邻像素区域之间延伸到衬底中的沟槽的像素分离部分。 沟槽中包括一个导电公共偏置线，以及在公共偏置线和沟槽表面之间的绝缘器件隔离层。 导电互连耦合到公共偏置线，并且被配置为向其提供负电压。 还讨论了相关的制造方法。

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