公开(公告)号：US20210328127A1

公开(公告)日：2021-10-21

申请号：US17227661

申请日：2021-04-12

Applicant: Samsung Electronics Co., Ltd

Inventor： Hyeokshin KWON ,  Jaehyeong LEE ,  Insu JEON

IPC: H01L39/22 ,  H01L39/02 ,  G06N10/00

Abstract: Provided is a quantum computing device and system. The quantum computing device includes a first qubit chip, a readout cavity structure surrounding a first end part of the first qubit chip, and a storage cavity structure surrounding a second end part of the first qubit chip, wherein the first qubit chip includes a first readout antenna disposed within the readout cavity structure, a first storage antenna disposed in the storage cavity structure, and a first qubit element provided between the first readout antenna and the first storage antenna, and wherein the first qubit element is disposed between the readout cavity structure and the storage cavity structure.

公开(公告)号：US20170077226A1

公开(公告)日：2017-03-16

申请号：US15261229

申请日：2016-09-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngtek OH ,  Hyeokshin KWON ,  Hwansoo SUH ,  Insu JEON

IPC: H01L29/06 ,  H01L29/861 ,  H01L29/78 ,  H01L21/02

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  B82Y40/00 ,  H01L21/02425 ,  H01L21/02444 ,  H01L21/02458 ,  H01L21/02488 ,  H01L21/02499 ,  H01L21/02532 ,  H01L21/0254 ,  H01L21/02601 ,  H01L21/02603 ,  H01L21/02631 ,  H01L21/02639 ,  H01L29/16 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78 ,  H01L29/861

Abstract: Provided are methods of forming nanostructures, methods of manufacturing semiconductor devices using the same, and semiconductor devices including nanostructures. A method of forming a nanostructure may include forming an insulating layer and forming a nanostructure on the insulating layer. The insulating layer may have a crystal structure. The insulating layer may include an insulating two-dimensional (2D) material. The insulating 2D material may include a hexagonal boron nitride (h-BN). The insulating layer may be formed on a catalyst metal layer. The nanostructure may include at least one of silicon (Si), germanium (Ge), and SiGe. The nanostructure may include at least one nanowire.

Abstract translation: 提供形成纳米结构的方法，制造使用其的半导体器件的制造方法以及包括纳米结构的半导体器件。 形成纳米结构的方法可以包括在绝缘层上形成绝缘层并形成纳米结构。 绝缘层可以具有晶体结构。 绝缘层可以包括绝缘二维（2D）材料。 绝缘2D材料可以包括六方氮化硼（h-BN）。 绝缘层可以形成在催化剂金属层上。 纳米结构可以包括硅（Si），锗（Ge）和SiGe中的至少一种。 纳米结构可以包括至少一个纳米线。

公开(公告)号：US20160148112A1

公开(公告)日：2016-05-26

申请号：US14952570

申请日：2015-11-25

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyeokshin KWON

IPC: G06N99/00 ,  H01L39/02 ,  H01L39/22 ,  H01L27/18

CPC classification number: G06N99/002 ,  H01L27/18 ,  H01L39/223

Abstract: A quantum qubit coupling structure is provided. The quantum qubit coupling structure includes a plurality of qubits and a variable capacitor electrically connected between the plurality of qubits to vary coupling constants of the plurality of qubits.

Abstract translation: 提供量子量子位耦合结构。 量子比特耦合结构包括多个量子位和电连接在多个量子位之间的可变电容器，以改变多个量子位的耦合常数。