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    METHOD OF GENERATING DEEP LEARNING MODEL AND COMPUTING DEVICE PERFORMING THE SAME
    12.
    发明申请
    METHOD OF GENERATING DEEP LEARNING MODEL AND COMPUTING DEVICE PERFORMING THE SAME 有权

    公开(公告)号：US20230056869A1

    公开(公告)日：2023-02-23

    申请号：US17689115

    申请日：2022-03-08

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gwangnae GIL ,  Seyoung PARK ,  Sola WOO ,  Jonghyun LEE

    IPC: G06N3/08 ,  G06N3/063 ,  G06N3/04

    Abstract: To generate a deep learning model, basic training data corresponding to a combination of device data and simulation result data is generated using a compact model that generates the simulation result data indicating characteristics of a semiconductor device corresponding to the device data by performing simulation based on the device data. A deep learning model is trained based on the basic training data such that the deep learning model outputs prediction data indicating the characteristics of the semiconductor device and uncertainty data indicating uncertainty of the prediction data. The deep learning model is retrained based on the uncertainty data. The deep learning model may precisely predict the characteristics of the semiconductor device by training the deep learning model to output the prediction data and the uncertainty data and retraining the deep learning model based on the uncertainty data.

    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
    13.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME 有权

    公开(公告)号：US20210272893A1

    公开(公告)日：2021-09-02

    申请号：US17016977

    申请日：2020-09-10

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun-Seung SONG ,  Kwang-Young LEE ,  Jonghyun LEE

    IPC: H01L23/528 ,  H01L27/11 ,  H01L21/768

    Abstract: A semiconductor device includes a first active pattern on a substrate; a first gate electrode crossing the first active pattern; source/drain patterns in an upper portion of the first active pattern and at opposite sides, respectively, of the first gate electrode; a first gate capping pattern on the first gate electrode; an interlayer insulating layer on the source/drain patterns; first and second active contacts penetrating the interlayer insulating layer and being respectively connected to the pair of source/drain patterns; and a first interconnection layer on the first and second active contacts. The first interconnection layer may include a first insulating structure covering a top surface of the second active contact; and a first interconnection line covering a top surface of the first active contact and extending on the first insulating structure, and covering a top surface of the first gate capping pattern between the first and second active contacts.

    METHOD OF GENERATING DEVICE MODEL AND COMPUTING DEVICE PERFORMING THE SAME
    15.
    发明公开
    METHOD OF GENERATING DEVICE MODEL AND COMPUTING DEVICE PERFORMING THE SAME 审中-公开

    公开(公告)号：US20230194594A1

    公开(公告)日：2023-06-22

    申请号：US17899101

    申请日：2022-08-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Gwangnae GIL ,  Seyoung PARK ,  Sola WOO ,  Jonghyun LEE

    IPC: G01R31/28 ,  G05B13/02

    CPC classification number: G01R31/2851 ,  G05B13/0265

    Abstract: Measurement data are produced by measuring characteristics of a semiconductor device. Target parameters are selected among a plurality of parameters of a device model where the device model is configured to perform a simulation based on device data and output simulation result data indicating the characteristics of the semiconductor device. Initial value sets corresponding to different combinations of initial values of the target parameters are selected. Local minimum values are determined based on reinforcement learning. Each local minimum value corresponds to a minimum value of a difference between the measurement data and the simulation result data with respect to each initial value set. Optimal values of the target parameters are determined based on the plurality of local minimum values. The device model capable of precisely predicting characteristics of the semiconductor device is generated by determining the parameters of the device model using the optimization scheme based on the reinforcement learning.

    SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME
    16.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICES AND METHODS OF MANUFACTURING THE SAME 有权

    公开(公告)号：US20220199679A1

    公开(公告)日：2022-06-23

    申请号：US17542720

    申请日：2021-12-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Kiwon PARK ,  Geunwoo KO ,  Inho KIM ,  Sungwook LEE ,  Jonghyun LEE ,  Byungchul CHOI

    IPC: H01L27/15

    Abstract: A semiconductor light emitting device is provided. The semiconductor light emitting device includes a plurality of light emitting structures, each of which includes a first surface and a second surface, a plurality of embossed portions provided on the first surface; a partition wall structure provided on the first surface of the plurality of light emitting structures and including a plurality of partition walls which define a plurality of pixel spaces; and a fluorescent layer provided in the plurality of pixel spaces. A bottom surface of the partition wall structure contacts the plurality of embossed portions.

    APPARATUS FOR SUPPLYING GAS
    17.
    发明申请
    APPARATUS FOR SUPPLYING GAS 有权

    公开(公告)号：US20220010932A1

    公开(公告)日：2022-01-13

    申请号：US17208331

    申请日：2021-03-22

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang Jin LEE ,  Young Kwon KIM ,  Ungi BAK ,  Jonghyun LEE ,  Ui Yong JUNG

    IPC: F17C11/00 ,  C01B3/06

    Abstract: An apparatus for supplying gas includes: an ion chamber; and a gas supply unit connected to the ion chamber, wherein the gas supply unit includes: a case having an internal space; an inactive gas supply unit connected to the ion chamber; and a hydrogen gas supply unit installed inside or outside of the case, wherein the hydrogen gas supply unit includes: a hydrogen gas generator generating hydrogen gas; a controller connected to the hydrogen gas generator; a dehumidifying filter connected to the controller and removing moisture from the hydrogen gas; and a purifying filter connected to the dehumidifying filter and removing an impurity from the hydrogen gas, wherein the hydrogen gas generator is configured to generate the hydrogen gas through a chemical reaction between a reactant and a hydrogen-containing solid raw material.

    ELECTRONIC DEVICE INCLUDING HEAT DISSIPATION STRUCTURE
    18.
    发明申请
    ELECTRONIC DEVICE INCLUDING HEAT DISSIPATION STRUCTURE 有权

    公开(公告)号：US20210321540A1

    公开(公告)日：2021-10-14

    申请号：US17266355

    申请日：2019-06-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyunmin OH ,  Sungjin PARK ,  Daegyu KANG ,  Insu KIM ,  Daegi LEE ,  Jonghyun LEE

    IPC: H05K7/20 ,  H04R1/02 ,  H04R9/02

    Abstract: An electronic device according to various embodiments of the disclosure includes: a housing including a plurality of acoustic holes; an enclosure mounted in the housing; at least one heating element disposed in the enclosure; a heat dissipation structure disposed on the heating element to transfer heat generated from the heating element; and a heat dissipation duct disposed at least partially on the heat dissipation structure to provide a path for transferring the heat transferred from the heat dissipation structure to the outside through the acoustic holes. The heat dissipation structure may include: at least one first heat transfer member coupled to the one heating element; and a second heat transfer member disposed at least partially on the first heat transfer member to transfer, to the heat dissipation duct, heat transferred from the first heat transfer member.

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