公开(公告)号：US20230074076A1

公开(公告)日：2023-03-09

申请号：US17726056

申请日：2022-04-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Eunsun NOH ,  Heeju SHIN ,  Junho JEONG

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/02

Abstract: A magnetic memory device may include a pinned magnetic pattern and a free magnetic pattern which are stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a capping pattern on the free magnetic pattern, and a non-magnetic pattern between the free magnetic pattern and the capping pattern. The free magnetic pattern may be between the tunnel barrier pattern and the capping pattern. The non-magnetic pattern may include a first non-magnetic metal and boron, and the capping pattern includes a second non-magnetic metal. A boride formation energy of the second non-magnetic metal may be higher than a boride formation energy of the first non-magnetic metal.

公开(公告)号：US20230013146A1

公开(公告)日：2023-01-19

申请号：US17956281

申请日：2022-09-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Whankyun KIM ,  Eunsun NOH ,  Jeong-heon PARK ,  Junho JEONG

IPC: C23C14/54 ,  H01L27/22 ,  C23C14/00 ,  G11B5/851 ,  H01L43/12

Abstract: A sputtering apparatus including a chamber, a gas supply configured to supply the chamber with a first gas and a second inert gas, the first inert gas and the second inert gas having a first evaporation point and second evaporation point, respectively, a plurality of sputter guns in an upper portion of the chamber, a chuck in a lower portion of the chamber and facing the sputter guns, the chuck configured to accommodate a substrate thereon, and a cooling unit connected to a lower portion of the chuck, the cooling unit configured to cool the chuck to a temperature less than the first evaporation point and greater than the second evaporation point, and a method of fabricating a magnetic memory device may be provided.

公开(公告)号：US20220383923A1

公开(公告)日：2022-12-01

申请号：US17576047

申请日：2022-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Whankyun KIM ,  Jeong-Heon PARK ,  Heeju SHIN ,  Youngjun CHO ,  Joonmyoung LEE ,  Junho JEONG

IPC: G11C11/16 ,  H01L43/10 ,  H01L43/08 ,  H01L27/22 ,  H01L43/02

Abstract: Disclosed is a magnetic memory device including a pinned magnetic pattern and a free magnetic pattern that are sequentially stacked on a substrate, a tunnel barrier pattern between the pinned magnetic pattern and the free magnetic pattern, a top electrode on the free magnetic pattern, and a capping pattern between the free magnetic pattern and the top electrode. The capping pattern includes a lower capping pattern, an upper capping pattern between the lower capping pattern and the top electrode, a first non-magnetic pattern between the lower capping pattern and the upper capping pattern, and a second non-magnetic pattern between the first non-magnetic pattern and the upper capping pattern. Each of the lower capping pattern and the upper capping pattern includes a non-magnetic metal. The first non-magnetic pattern and the second non-magnetic pattern include different metals from each other.