公开(公告)号：US20220254873A1

公开(公告)日：2022-08-11

申请号：US17731032

申请日：2022-04-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongyul Park ,  Jaewan Chang ,  Suhwan Kim ,  Hyunjun Kim

IPC: H01L49/02 ,  H01L27/108

Abstract: A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.

公开(公告)号：US11348995B2

公开(公告)日：2022-05-31

申请号：US17030152

申请日：2020-09-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seongyul Park ,  Jaewan Chang ,  Suhwan Kim ,  Hyunjun Kim

IPC: H01L21/02 ,  H01L21/469 ,  H01L49/02 ,  H01L27/108

Abstract: A capacitor structure may include a lower electrode on a substrate, a dielectric layer on the substrate, and an upper electrode on the dielectric layer. The lower electrode may include a metal nitride having a chemical formula of M1Ny (M1 is a first metal, and y is a positive real number). The dielectric layer may include a metal oxide and nitrogen (N), the metal oxide having a chemical formula of M2Ox (M2 is a second metal, and x is a positive real number). A maximum value of a detection amount of nitrogen (N) in the dielectric layer may be greater than a maximum value of a detection amount of nitrogen (N) in the lower electrode.

公开(公告)号：US09997523B2

公开(公告)日：2018-06-12

申请号：US15631308

申请日：2017-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Toshiro Nakanishi ,  Donghwan Kim ,  Suhwan Kim ,  Yubin Kim ,  Jin Soak Kim ,  Gabjin Nam ,  Sungkweon Baek ,  Taehyun An ,  Eunae Chung

IPC: H01L21/82 ,  H01L27/11 ,  H01L51/00 ,  H01L51/05 ,  H01L27/28

CPC classification number: H01L27/1104 ,  H01L27/281 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/057 ,  H01L51/0575

Abstract: A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.

公开(公告)号：US20170294441A1

公开(公告)日：2017-10-12

申请号：US15631308

申请日：2017-06-23

Applicant: Samsung Electronics Co., Ltd.

Inventor： Toshiro Nakanishi ,  Donghwan Kim ,  Suhwan Kim ,  Yubin Kim ,  Jin Soak Kim ,  Gabjin Nam ,  Sungkweon Baek ,  Taehyun An ,  Eunae Chung

IPC: H01L27/11 ,  H01L27/28 ,  H01L51/05 ,  H01L51/00

CPC classification number: H01L27/1104 ,  H01L27/281 ,  H01L27/283 ,  H01L51/0048 ,  H01L51/057 ,  H01L51/0575

Abstract: A static random access memory (SRAM) cell can include a first pull-up transistor, a first pull-down transistor, a second pull-up transistor, a second pull-down transistor, a first access transistor, and a second access transistor, all being coupled together in a 6 transistor SRAM cell, wherein each of the transistors is configured as a vertical channel transistor.