Abstract:
An ultrasonic probe is attached to a target to perform ultrasonic measurement. The ultrasonic probe includes: a first substrate including an ultrasonic element array in which a plurality of ultrasonic elements performing at least one of transmission of ultrasonic waves and reception of ultrasonic waves are arranged in an array, the ultrasonic element array being arranged on a first surface of the first substrate; a second substrate facing a second surface opposite to the first surface of the first substrate; and a housing that houses the first substrate and the second substrate therein and is provided with an opening through which the ultrasonic waves pass at a position corresponding to the ultrasonic element array. The second substrate includes a communication unit coupled to the plurality of ultrasonic elements and capable of wirelessly communicating with another terminal device. A weight of the ultrasonic probe is 150 g or less.
Abstract:
A terahertz wave detecting device which includes a substrate and a plurality of detection elements arranged above the substrate, wherein the detection element includes a first metal layer that is provided on the substrate, a support substrate that is provided to be spaced from the first metal layer, an absorbing section that is provided above the support substrate and which absorbs a terahertz wave to generate heat, and a converting section that includes a second metal layer, a pyroelectric layer, and a third metal layer layered on the absorbing section, and which converts the heat generated in the absorbing section into an electric signal.
Abstract:
A terahertz wave detection device which includes an absorption portion which absorbs a terahertz wave and generates heat and a conversion portion which converts the heat generated by the absorption portion into an electric signal, wherein the absorption portion includes a dielectric layer, a plurality of metal structures which are provided on one surface of the dielectric layer and are arranged to be separated from one another by an interval having a predetermined length; and a metal layer which is provided on the other surface of the dielectric layer, and wherein the interval is shorter than a wavelength of the terahertz wave which is absorbed by the absorption portion.
Abstract:
A photoconductive antenna is adapted to generate terahertz waves when irradiated by pulsed light. The photoconductive antenna includes first and second conductive layers, a semiconductor layer, and first and second electrodes. The semiconductor layer is made of a semiconductor material having a carrier density that is lower than a carrier density of the semiconductor material of the first conductive layer or the second conductive layer. The first and second electrodes are electrically connected to the first and second conductive layers, respectively. The semiconductor layer includes an incidence surface through which the pulsed light enters the semiconductor layer, and an emission surface from which the terahertz waves are emitted. The incidence surface is positioned in a side surface of the semiconductor layer having a normal direction extending orthogonal to a lamination direction, and the emission surface is positioned in the side surface at a position different from the incidence surface.
Abstract:
A photoconductive antenna is adapted to generate terahertz waves when irradiated by pulsed light. The photoconductive antenna includes first and second conductive layers, a semiconductor layer positioned between the first and second conductive layers, first and second electrodes, and a dielectric layer. The semiconductor layer is made of a semiconductor material having a carrier density that is lower than a carrier density of the semiconductor material of the first conductive layer or the second conducive layer. The first and second electrodes are electrically connected to the first and second conductive layers, respectively. The second electrode has an aperture through which the pulsed light passes. The dielectric layer is made of a dielectric material, and is in contact with a surface of the semiconductor layer having a normal direction extending orthogonal to a lamination direction of the first conductive layer, the semiconductor layer, and the second conductive layer.
Abstract:
A fluidic device that uses ultrasonic waves to trap microparticles contained in a fluid, the fluidic device includes: a body having a flow path through which the fluid flows and an ultrasonic element provided on a flow path wall forming the flow path of the body and configured to transmit ultrasonic waves in first direction to form a standing wave in the flow path, wherein the body has, with a portion where the ultrasonic element is arranged as a trapping section, an inflow section configured to cause the fluid to flow into the trapping section along a second direction intersects with the first direction, a first outflow section through which concentrated fluid containing microparticles trapped by the standing wave flows out from the trapping section, and a second outflow section through which diluted fluid having a concentration of the microparticles lower than that of the concentrated fluid flows out from the trapping section, the inflow section is provided at a negative side of the trapping section in the second direction, the first outflow section is provided at a positive side of the trapping section in the second direction, and the second outflow section is provided at the negative side of the trapping section in the second direction at a position different from that of the inflow section.
Abstract:
According to an aspect of the present disclosure, there is provided a drying device disposed at a predetermined interval from a recording medium and including a heater configured to dry liquid applied to the recording medium with a high frequency wave. The heater includes a first electrode coupled to a power supply that outputs the high frequency wave and a second electrode coupled to the power supply that outputs the high frequency wave and disposed to be separated from the first electrode at a predetermined interval. The distance between the end of the first electrode and the recording medium is longer compared with the distance between the center of the first electrode and the recording medium.
Abstract:
A robot has an optical signal transmitter that transmits an optical signal, the optical signal transmitter includes a light source, a supporting board that supports the light source, and a light guide part that transmits light emitted from the light source, and the supporting board includes a board main body, a penetration portion connected to the light source, penetrating in a thickness direction of the board main body, and formed using a metal material, and a heat dissipation portion connected to the penetration portion and formed using a metal material, wherein the penetration portion is placed between the light source and the heat dissipation portion, and the light source is placed between the light guide part and the supporting board.
Abstract:
A light modulator according to the invention includes an optical waveguide formed of a material having an electro-optic effect, a buffer layer formed on the optical waveguide, and a pair of electrodes formed on the buffer layer, the width in the direction, in which the pair of electrodes are opposed to each other, of the buffer layer located on the side of the electrodes opposed to the optical waveguide is smaller than the width in the direction, in which the pair of electrodes are opposed to each other, of the buffer layer located on the optical waveguide side.
Abstract:
A terahertz wave detecting device includes: a substrate; a first metal layer that is disposed above the substrate; a pyroelectric layer that is disposed on the first metal layer; and a second metal layer that is disposed on the pyroelectric layer, wherein the second metal layer has a periodic structure in which a unit structure is disposed in a predetermined period, and the pyroelectric layer absorbs terahertz waves being incident on the pyroelectric layer and converts the terahertz waves into heat and converts the converted heat into an electrical signal.