公开(公告)号：US11605732B2

公开(公告)日：2023-03-14

申请号：US16675813

申请日：2019-11-06

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Kevin Kyuheon Cho ,  Bongyong Lee ,  Kyeongseok Park ,  Doojin Choi ,  Thomas Neyer ,  James Joseph Victory

IPC: H01L29/78 ,  H01L21/04 ,  H01L29/66 ,  H01L29/16

Abstract: A power device includes a silicon carbide substrate. A gate is provided on a first side of the silicon carbide substrate. A graded channel includes a first region having a first dopant concentration and a second region having a second dopant concentration, the second dopant concentration being greater than the first dopant concentration.

公开(公告)号：US11152211B2

公开(公告)日：2021-10-19

申请号：US16852146

申请日：2020-04-17

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael J. Seddon ,  Thomas Neyer

IPC: H01L21/04 ,  H01L21/67 ,  B24B37/20

Abstract: Semiconductor substrate thinning systems and methods. Implementations of a method of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface and inducing damage into a portion of the semiconductor substrate adjacent to the second surface forming a damage layer. The method may also include backgrinding the second surface of the semiconductor substrate.

公开(公告)号：US10388526B1

公开(公告)日：2019-08-20

申请号：US15958123

申请日：2018-04-20

Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC

Inventor： Michael J. Seddon ,  Thomas Neyer

IPC: H01L21/04 ,  B24B37/20 ,  H01L21/67

Abstract: Semiconductor substrate thinning systems and methods. Implementations of a method of thinning a semiconductor substrate may include: providing a semiconductor substrate having a first surface and a second surface opposing the first surface and inducing damage into a portion of the semiconductor substrate adjacent to the second surface forming a damage layer. The method may also include backgrinding the second surface of the semiconductor substrate.