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    INSPECTION DEVICE AND INSPECTION METHOD
    11.
    发明申请
    INSPECTION DEVICE AND INSPECTION METHOD 有权

    公开(公告)号：US20220138983A1

    公开(公告)日：2022-05-05

    申请号：US17434033

    申请日：2020-03-20

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Hiromichi GODO ,  Kentaro HAYASHI

    IPC: G06T7/73 ,  G06N3/063 ,  G06T5/50

    Abstract: An inspection device capable of sensing an abnormality included in an image with high accuracy is provided. The inspection device includes an electron microscope, an image processing device, and a calculator. The electron microscope has a function of generating a signal corresponding to a surface shape of a sample over a stage. The image processing device has a function of generating a first image corresponding to the signal. The calculator includes a circuit in which a neural network is formed, and has a function of obtaining a second image on the basis of the first image using the neural network. The calculator has a function of obtaining a third image by performing smoothing processing on the first image and a function of obtaining a fourth image by performing smoothing processing on the second image. The calculator has a function of obtaining a fifth image by obtaining a difference between the third image and the fourth image.

    IMAGING DEVICE, OPERATING METHOD THEREOF, AND ELECTRONIC DEVICE
    12.
    发明申请
    IMAGING DEVICE, OPERATING METHOD THEREOF, AND ELECTRONIC DEVICE 有权

    公开(公告)号：US20210314517A1

    公开(公告)日：2021-10-07

    申请号：US17236267

    申请日：2021-04-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro OHMARU ,  Naoto KUSUMOTO ,  Kentaro HAYASHI

    IPC: H04N5/3745 ,  H01L27/146 ,  H04N5/232 ,  H04N5/347 ,  H04N5/369

    Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

    Display Device and Operation Method Thereof
    13.
    发明申请
    Display Device and Operation Method Thereof 有权

    公开(公告)号：US20210110783A1

    公开(公告)日：2021-04-15

    申请号：US16971137

    申请日：2019-02-14

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Susumu KAWASHIMA ,  Kouhei TOYOTAKA ,  Koji KUSUNOKI ,  Kei TAKAHASHI ,  Kentaro HAYASHI

    IPC: G09G3/36 ,  G09G3/34

    Abstract: A display device operating at high speed is provided.
    The display device includes a pixel provided with a first memory circuit, a second memory circuit, and a display unit, in which the first memory circuit and the second memory circuit are electrically connected to one electrode of the display unit. The operation of the display device includes a first period of writing first image data to the first memory circuit and writing second image data to the second memory circuit, a second period of supplying a first potential to the first memory circuit, a third period of displaying a first image corresponding to the first image data, a fourth period of setting a potential of the one electrode of the display unit to a second potential, a fifth period of supplying the first potential to the second memory circuit, and a sixth period of displaying a second image corresponding to the second image data.

    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE
    14.
    发明申请
    SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250016973A1

    公开(公告)日：2025-01-09

    申请号：US18760313

    申请日：2024-07-01

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Shunpei YAMAZAKI ,  Tsutomu MURAKAWA ,  Kentaro HAYASHI

    IPC: H10B12/00

    Abstract: A low-cost semiconductor device is provided. A memory cell including a first transistor, a second transistor, and a capacitor is provided. The second transistor is located above the first transistor and the capacitor. In the capacitor, one of a pair of electrodes, a dielectric layer, and the other of the pair of electrodes are provided in this order. A gate electrode of the first transistor, one of a source electrode and a drain electrode of the second transistor, and the other of the pair of electrodes of the capacitor are the same conductive layer. A gate insulating layer of the first transistor and the dielectric layer of the capacitor are the same insulating layer. A semiconductor layer of the first transistor and the one of the pair of electrodes of the capacitor are provided along a sidewall of an opening portion included in a first interlayer insulating layer. A semiconductor layer of the second transistor is provided along a sidewall of an opening portion included in a second interlayer insulating layer over the first transistor and the capacitor. The first transistor and the second transistors are vertical transistors, and the capacitor is a trench capacitor.

    IMAGING DEVICE, OPERATING METHOD THEREOF, AND ELECTRONIC DEVICE
    18.
    发明申请
    IMAGING DEVICE, OPERATING METHOD THEREOF, AND ELECTRONIC DEVICE 审中-公开
    成像装置，其操作方法和电子装置

    公开(公告)号：US20170054930A1

    公开(公告)日：2017-02-23

    申请号：US15230727

    申请日：2016-08-08

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro OHMARU ,  Naoto KUSUMOTO ,  Kentaro HAYASHI

    IPC: H04N5/374 ,  H01L27/146 ,  H04N5/351 ,  H04N5/369 ,  H04N5/357

    CPC classification number: H01L27/14605 ,  H01L27/14609 ,  H01L27/14616 ,  H01L27/14643 ,  H01L27/14696 ,  H04N5/23245 ,  H04N5/347 ,  H04N5/3696 ,  H04N5/37457

    Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

    Abstract translation: 提供低功耗的成像装置。 成像装置的像素包括第一和第二光电转换元件以及第一至第五晶体管。 第一光电转换元件的阴极与第一晶体管电连接。 第二光电转换元件的阳极电连接到第二晶体管。 使用第一光电转换元件获得参考帧的成像数据，然后使用第二光电转换元件获得差分检测帧的成像数据。 在获得差分检测帧的成像数据之后，比较作为从像素输出的信号的电位的第一电位和作为参考电位的第二电位的第一电位。 使用第一电位和第二电位来确定参考帧的成像数据和差异检测帧的成像数据之间是否存在差异。

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