公开(公告)号：US20220285560A1

公开(公告)日：2022-09-08

申请号：US17679413

申请日：2022-02-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hitoshi KUNITAKE ,  Yasuhiro JINBO ,  Naoki OKUNO ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA

IPC: H01L29/786 ,  G09G3/32

Abstract: A transistor whose characteristic degradation due to stray light is small is provided. The transistor includes a first insulator, a second insulator over the first insulator, a metal oxide over the second insulator, a first and a second conductor over the metal oxide, a third insulator over the first insulator, the second insulator, the metal oxide, the first conductor, and the second conductor, a fourth insulator over the metal oxide, a fifth insulator over the fourth insulator, and a third conductor over the fifth insulator. The third insulator has an opening to overlap with a region between the first conductor and the second conductor. The fourth insulator, the fifth insulator, and the third conductor are positioned in the opening. The metal oxide has a bandgap greater than or equal to 3.3 eV. The transistor has Vsh higher than or equal to −0.3 V.

公开(公告)号：US20220131010A1

公开(公告)日：2022-04-28

申请号：US17430332

申请日：2020-02-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tomonori NAKAYAMA ,  Masahiro TAKAHASHI

IPC: H01L29/786 ,  H01L29/24

Abstract: To provide a novel metal oxide. The metal oxide includes a first region and a second region. A third region is included between the first region and the second region. An interface of the first region is covered with the third region. The crystallinity of the third region is lower than the crystallinity of the first region. The crystallinity of the second region is lower than the crystallinity of the third region. The size of the first region measured from an image observed with a transmission electron microscope is greater than or equal to 1 nm and less than or equal to 3 nm.

公开(公告)号：US20220127713A1

公开(公告)日：2022-04-28

申请号：US17431275

申请日：2020-02-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Toshimitsu OBONAI ,  Yasuharu HOSAKA ,  Kenichi OKAZAKI ,  Masahiro TAKAHASHI ,  Tomonori NAKAYAMA ,  Tomosato KANAGAWA ,  Shunpei YAMAZAKI

IPC: C23C14/34 ,  C23C14/08 ,  H01L21/66

Abstract: A metal oxide film with high electrical characteristics is provided. A metal oxide film with high reliability is provided. The metal oxide film contains indium, M (M is aluminum, gallium, yttrium, or tin), and zinc. In the metal oxide film, distribution of interplanar spacings d determined by electron diffraction by electron beam irradiation from a direction perpendicular to a film surface of the metal oxide film has a first peak and a second peak. The top of the first peak is positioned at greater than or equal to 0.25 nm and less than or equal to 0.30 nm, and the top of the second peak is positioned at greater than or equal to 0.15 nm and less than or equal to 0.20 nm. The distribution of the interplanar spacings d is obtained from a plurality of electron diffraction patterns of a plurality of regions of the metal oxide film. The electron diffraction is performed using an electron beam with a beam diameter of greater than or equal to 0.3 nm and less than or equal to 10 nm.

公开(公告)号：US20200075769A1

公开(公告)日：2020-03-05

申请号：US16553287

申请日：2019-08-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshikazu OHNO ,  Daisuke YAMAGUCHI ,  Tomonori NAKAYAMA

IPC: H01L29/786 ,  H01L21/02 ,  H01L29/66 ,  H01L27/15

Abstract: A highly reliable semiconductor device is provided. The semiconductor device includes a first oxide; a second oxide, a first layer, and a second layer over the first oxide; an insulator over the second oxide; a first conductor over the insulator; a second conductor over the first layer; and a third conductor over the second layer. Each of the first and second layers includes a region with a thickness ranging from 0.5 nm to 3 nm. Each of the second and third conductors contains a conductive material having the physical property of extracting hydrogen.