公开(公告)号：US20150064565A1

公开(公告)日：2015-03-05

申请号：US14507872

申请日：2014-10-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroatsu TODORIKI ,  Yumiko SAITO ,  Takahiro KAWAKAMI ,  Kuniharu NOMOTO ,  Mikio YUKAWA

IPC: H01M4/583 ,  H01M4/133 ,  H01G11/36 ,  C01B31/04

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

Abstract translation: 石墨烯的形成方法包括在第一导电层上形成包括氧化石墨烯的层的步骤; 并且在其中浸入作为工作电极的第一导电层和作为对电极的第二导电层的电解质中，提供氧化石墨烯的还原反应发生到第一导电层的电位。 至少包括正电极，负极，电解质和隔膜的蓄电装置的制造方法包括通过所述正极和负极中的一个或两个的活性物质层形成石墨烯的步骤 形成方法。

公开(公告)号：US20230073850A1

公开(公告)日：2023-03-09

申请号：US17983140

申请日：2022-11-08

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu TODORIKI ,  Yumiko SAITO ,  Takahiro KAWAKAMI ,  Kuniharu NOMOTO ,  Mikio YUKAWA

IPC: H01M4/583 ,  H01G11/22 ,  H01M4/133 ,  H01G11/32 ,  H01M4/04 ,  H01M4/587 ,  H01M4/1393 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/23 ,  C01B32/192 ,  H01G9/042 ,  H01M4/139 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01G11/36

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

公开(公告)号：US20200350585A1

公开(公告)日：2020-11-05

申请号：US16935771

申请日：2020-07-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu TODORIKI ,  Yumiko SAITO ,  Takahiro KAWAKAMI ,  Kuniharu NOMOTO ,  Mikio YUKAWA

IPC: H01M4/583 ,  H01G11/22 ,  H01M4/133 ,  H01G11/32 ,  H01M4/04 ,  H01M4/587 ,  H01M4/1393 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/23 ,  C01B32/192 ,  H01G9/042 ,  H01M4/139 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01G11/36

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

公开(公告)号：US20160064154A1

公开(公告)日：2016-03-03

申请号：US14937975

申请日：2015-11-11

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yumiko SAITO ,  Rie YOKOI ,  Mayumi MIKAMI

IPC: H01G11/48 ,  H01M4/36 ,  H01M4/60 ,  H01M4/48 ,  H01M4/137 ,  H01M4/131 ,  H01M4/1391 ,  H01M4/1399 ,  H01G11/50 ,  H01G11/30 ,  H01G11/32 ,  H01G11/62 ,  H01G11/52 ,  H01M10/0525 ,  H01M4/04

CPC classification number: H01G11/48 ,  H01G11/30 ,  H01G11/32 ,  H01G11/50 ,  H01G11/52 ,  H01G11/62 ,  H01M4/0404 ,  H01M4/0471 ,  H01M4/13 ,  H01M4/131 ,  H01M4/137 ,  H01M4/1391 ,  H01M4/1399 ,  H01M4/366 ,  H01M4/386 ,  H01M4/387 ,  H01M4/483 ,  H01M4/606 ,  H01M4/662 ,  H01M10/0525 ,  H01M2004/027 ,  H01M2220/30 ,  Y02E60/13 ,  Y02T10/7022

Abstract: A mixture of amorphous PAHs and at least one of a carrier ion storage metal, a Sn compound, a carrier ion storage alloy, a metal compound, Si, Sb, and SiO2 is used as the negative electrode active material. The theoretical capacity of amorphous PAHs greatly exceeds that of a graphite-based carbon material. Thus, the use of amorphous PAHs enables the negative electrode active material to have a higher capacity than in the case of using the graphite-based carbon material. Further, addition of at least one of the carrier ion storage metal, the Sn compound, the carrier ion storage alloy, the metal compound, Si, Sb, and SiO2 to the amorphous PAHs enables the negative electrode active material to have a higher capacity than the case of only using the amorphous PAHs.

公开(公告)号：US20230307639A1

公开(公告)日：2023-09-28

申请号：US18205264

申请日：2023-06-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Hiroatsu TODORIKI ,  Yumiko SAITO ,  Takahiro KAWAKAMI ,  Kuniharu NOMOTO ,  Mikio YUKAWA

IPC: H01M4/583 ,  H01G11/22 ,  H01M4/133 ,  H01G11/32 ,  H01M4/04 ,  H01M4/587 ,  H01M4/1393 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/23 ,  C01B32/192 ,  H01G9/042 ,  H01M4/139 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01G11/36

CPC classification number: H01M4/5835 ,  H01G11/22 ,  H01M4/133 ,  H01G11/32 ,  H01M4/0438 ,  H01M4/587 ,  H01M4/1393 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/23 ,  C01B32/192 ,  H01G9/042 ,  H01M4/139 ,  H01M4/62 ,  H01M6/16 ,  H01M10/0566 ,  H01G11/36 ,  Y02E60/13 ,  H01M10/0525

Abstract: The formation method of graphene includes the steps of forming a layer including graphene oxide over a first conductive layer; and supplying a potential at which the reduction reaction of the graphene oxide occurs to the first conductive layer in an electrolyte where the first conductive layer as a working electrode and a second conductive layer with a as a counter electrode are immersed. A manufacturing method of a power storage device including at least a positive electrode, a negative electrode, an electrolyte, and a separator includes a step of forming graphene for an active material layer of one of or both the positive electrode and the negative electrode by the formation method.

公开(公告)号：US20200234893A1

公开(公告)日：2020-07-23

申请号：US16840659

申请日：2020-04-06

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yumiko SAITO ,  Rie YOKOI ,  Mayumi MIKAMI

IPC: H01G11/48 ,  H01M4/66 ,  H01M4/13 ,  H01M10/0525 ,  H01M4/60 ,  H01M4/36 ,  H01M4/1399 ,  H01M4/1391 ,  H01M4/137 ,  H01M4/131 ,  H01M4/04 ,  H01G11/62 ,  H01G11/52 ,  H01G11/32 ,  H01M4/48 ,  H01G11/30 ,  H01G11/50 ,  H01M4/38

Abstract: A mixture of amorphous PAHs and at least one of a carrier ion storage metal, a Sn compound, a carrier ion storage alloy, a metal compound, Si, Sb, and SiO2 is used as the negative electrode active material. The theoretical capacity of amorphous PAHs greatly exceeds that of a graphite based carbon material. Thus, the use of amorphous PAHs enables the negative electrode active material to have a higher capacity than in the case of using the graphite-based carbon material. Further, addition of at least one of the carrier ion storage metal, the Sn compound, the carrier ion storage alloy, the metal compound, Si, Sb, and SiO2 to the amorphous PAHs enables the negative electrode active material to have a higher capacity than the case of only using the amorphous PAHs.