公开(公告)号：US20150243847A1

公开(公告)日：2015-08-27

申请号：US14694651

申请日：2015-04-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Chang Yeon KIM ,  Da Hye Kim ,  Hong Chul Lim ,  Joon Hee Lee ,  Jong Kyun You

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/32

CPC classification number: H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/73265

Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

Abstract translation: 本发明的示例性实施例涉及一种高效率发光二极管（LED）。 根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层 半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型 半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。

公开(公告)号：US20140367722A1

公开(公告)日：2014-12-18

申请号：US14368268

申请日：2012-12-21

Applicant: Seoul Viosys Co., Ltd.

Inventor： Tae Hyuk Im ,  Chang Yeon Kim ,  Yeo Jin Yoon ,  Joon Hee Lee ,  Ki Bum Nam ,  Da Hye Kim ,  Chang Ik Im ,  Young Wug Kim

IPC: H01L33/44 ,  H01L33/38 ,  H01L33/32 ,  H01L33/00

CPC classification number: H01L33/44 ,  H01L33/0008 ,  H01L33/0079 ,  H01L33/06 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/387 ,  H01L33/405 ,  H01L33/60 ,  H01L2933/0083 ,  H01L2933/0091

Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Abstract translation: 公开了一种发光二极管及其制造方法。 根据本发明的一个方面的发光二极管包括：第一导电覆层; 在第一导电覆层中配置的折射率不同于第一导电覆层的折射率的光散射图案; 位于第一导电覆层下方的有源层; 位于有源层下方的第二导电覆层; 第一电极，被配置为电连接到所述第一导电包覆层; 以及第二电极，被配置为电连接到第二导电包覆层。 光散射图可以提高光提取效率。