Repair of active leaks in industrial systems using cold spray

    公开(公告)号:US11506326B2

    公开(公告)日:2022-11-22

    申请号:US17251638

    申请日:2018-06-13

    Abstract: A method of repairing an active leak in embodiments of the present invention may include one or more of the following steps: (a) identifying the active leak on a pipe structure, tank or pressure vessel, (b) setting cold spray system settings to repair the pipe structure, (c) administering pressurized gas and metal powder to an active pipe leak, (d) identifying any potential hazards surrounding the active pipe leak, (e) eliminating and/or reducing the potential hazards surround the active pipe leak, (f) inserting a wedge within an active leak pipe hole, (g) ceasing administration of pressurized gas and metal powder to the active pipe leak when it appears sealed, (h) verifying the active pipe leak is sealed, and (i) re-administering the pressurized gas and the metal powder to the active leak is the active leak is not fully sealed.

    Cold spray manufacturing and repair cell

    公开(公告)号:US10921784B2

    公开(公告)日:2021-02-16

    申请号:US16312187

    申请日:2017-06-21

    Abstract: The present disclosure addresses limitations with methods, systems and processes for integrating multiple advanced technologies into a single automated manufacturing and repair cell. The methods, systems and processes of the present disclosure leverage unique software and hardware to configure a manufacturing cell that is capable of conducting process development and planning, dimensional analysis, pre-machining, surface preparation, cold spray (supersonic particle deposition), dust collection, helium recovery, and post machining in a single integrated manufacturing and repair cell.

    NANO MEMORY DEVICE
    18.
    发明申请

    公开(公告)号:US20210408376A1

    公开(公告)日:2021-12-30

    申请号:US17469080

    申请日:2021-09-08

    Abstract: A non-volatile memory circuit in embodiments of the present invention may have one or more of the following features: (a) a logic source, and (b) a semi-conductive device being electrically coupled to the logic source, having a first terminal, a second terminal and a nano-grease with significantly reduced amount of carbon nanotube loading located between the first and second terminal, wherein the nano-grease exhibits non-volatile memory characteristics.

    Repair of Active Leaks in Industrial Systems using Cold Spray

    公开(公告)号:US20210199231A1

    公开(公告)日:2021-07-01

    申请号:US17251638

    申请日:2018-06-13

    Abstract: A method of repairing an active leak in embodiments of the present invention may include one or more of the following steps: (a) identifying the active leak on a pipe structure, tank or pressure vessel, (b) setting cold spray system settings to repair the pipe structure, (c) administering pressurized gas and metal powder to an active pipe leak, (d) identifying any potential hazards surrounding the active pipe leak, (e) eliminating and/or reducing the potential hazards surround the active pipe leak, (f) inserting a wedge within an active leak pipe hole, (g) ceasing administration of pressurized gas and metal powder to the active pipe leak when it appears sealed, (h) verifying the active pipe leak is sealed, and (i) re-administering the pressurized gas and the metal powder to the active leak is the active leak is not fully sealed.

Patent Agency Ranking