公开(公告)号：US10516041B2

公开(公告)日：2019-12-24

申请号：US16004257

申请日：2018-06-08

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Alessandro Chini

IPC: H01L29/778 ,  H01L29/20 ,  H01L29/423 ,  H01L29/08 ,  H01L29/417 ,  H01L29/66 ,  H01L29/10 ,  H01L29/207

Abstract: An HEMT includes a buffer layer, a hole-supply layer on the buffer layer, a heterostructure on the hole-supply layer, and a source electrode. The hole-supply layer is made of P-type doped semiconductor material, the buffer layer is doped with carbon, and the source electrode is in direct electrical contact with the hole-supply layer, such that the hole-supply layer can be biased to facilitate the transport of holes from the hole-supply layer to the buffer layer.

公开(公告)号：US10381470B2

公开(公告)日：2019-08-13

申请号：US15393945

申请日：2016-12-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Alessandro Chini

IPC: H01L29/778 ,  H01L21/02 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/66 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423

Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.

公开(公告)号：US20170345922A1

公开(公告)日：2017-11-30

申请号：US15393945

申请日：2016-12-29

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Alessandro Chini

IPC: H01L29/778 ,  H01L29/205 ,  H01L21/02 ,  H01L29/20 ,  H01L29/66 ,  H01L29/40

CPC classification number: H01L29/7787 ,  H01L21/02458 ,  H01L21/0254 ,  H01L29/0657 ,  H01L29/2003 ,  H01L29/205 ,  H01L29/402 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/7786

Abstract: An HEMT device, comprising: a semiconductor body including a heterojunction structure; a dielectric layer on the semiconductor body; a gate electrode; a drain electrode, facing a first side of the gate electrode; and a source electrode, facing a second side opposite to the first side of the gate electrode; an auxiliary channel layer, which extends over the heterojunction structure between the gate electrode and the drain electrode, in electrical contact with the drain electrode and at a distance from the gate electrode, and forming an additional conductive path for charge carriers that flow between the source electrode and the drain electrode.

公开(公告)号：US20170141208A1

公开(公告)日：2017-05-18

申请号：US15159045

申请日：2016-05-19

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Ferdinando Iucolano ,  Alfonso Patti ,  Alessandro Chini

IPC: H01L29/66 ,  H01L29/205 ,  H01L29/423 ,  H01L29/778

Abstract: A HEMT transistor of the normally off type, including: a semiconductor heterostructure, which comprises at least one first layer and one second layer, the second layer being set on top of the first layer; a trench, which extends through the second layer and a portion of the first layer; a gate region of conductive material, which extends in the trench; and a dielectric region, which extends in the trench, coats the gate region, and contacts the semiconductor heterostructure. A part of the trench is delimited laterally by a lateral structure that forms at least one first step. The semiconductor heterostructure forms a first edge and a second edge of the first step, the first edge being formed by the first layer.