公开(公告)号：US09419148B2

公开(公告)日：2016-08-16

申请号：US14656331

申请日：2015-03-12

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Leonardo Fragapane ,  Antonino Alessandria

IPC: H01L29/66 ,  H01L29/868 ,  H01L29/78 ,  H01L27/06 ,  H01L27/07 ,  H01L27/08 ,  H01L29/06 ,  H01L29/36 ,  H01L29/43

CPC classification number: H01L29/868 ,  H01L27/0629 ,  H01L27/0664 ,  H01L27/0694 ,  H01L27/0727 ,  H01L27/0814 ,  H01L29/0692 ,  H01L29/36 ,  H01L29/43 ,  H01L29/66136 ,  H01L29/7804

Abstract: A diode is integrated on a semiconductor chip having anode and cathode surfaces opposite to each other. The diode comprises a cathode region extending inwardly from the cathode surface, a drift region extending between the anode surface and the cathode region, and a plurality of anode regions extending from the anode surface in the drift region. The diode further comprises a cathode electrode coupled with the cathode region, and an anode electrode that contacts one or more contacted anode regions of said anode regions and is electrically insulated from one or more floating anode regions of the anode regions. The diode is configured so that charge carriers are injected from the floating anode regions into the drift region in response to applying of a control voltage exceeding a threshold voltage.

Abstract translation: 二极管集成在具有彼此相对的阳极和阴极表面的半导体芯片上。 二极管包括从阴极表面向内延伸的阴极区域，在阳极表面和阴极区域之间延伸的漂移区域以及从漂移区域中的阳极表面延伸的多个阳极区域。 二极管还包括与阴极区域耦合的阴极电极和接触所述阳极区域的一个或多个接触阳极区域并与阳极区域的一个或多个浮动阳极区域电绝缘的阳极电极。 二极管被配置为使得电荷载流子响应于施加超过阈值电压的控制电压而从浮置阳极区域注入漂移区域。

公开(公告)号：US20160111507A1

公开(公告)日：2016-04-21

申请号：US14972794

申请日：2015-12-17

Applicant: STMicroelectronics S.r.l.

Inventor： Leonardo Fragapane ,  Antonino Alessandria

IPC: H01L29/423 ,  H01L29/40 ,  H01L29/66

CPC classification number: H01L29/4236 ,  H01L29/1095 ,  H01L29/401 ,  H01L29/66348 ,  H01L29/66666 ,  H01L29/66734 ,  H01L29/7397 ,  H01L29/7827

Abstract: A device includes an epitaxial region extending into a front surface of a chip. A portion of the chip adjacent the epitaxial region defines a collector. A gate is provided in a trench extending into the epitaxial region from the front surface. An emitter includes a body extending into the epitaxial region at a first side of the trench and a source extending into the body region from the front surface at the trench. A dummy emitter extends into the epitaxial region from the front surface at a second side of the trench opposite said first side. The dummy emitter lacks the source. The gate extends along a first wall of the trench facing the emitter region. A dummy gate is formed in the trench in a manner electrically isolated from the gate and extending along a second wall of the trench opposite said first wall.

Abstract translation: 一种器件包括延伸到芯片前表面的外延区域。 与外延区域相邻的芯片的一部分限定了集电极。 栅极设置在从前表面延伸到外延区域的沟槽中。 发射器包括在沟槽的第一侧延伸到外延区域中的主体和从沟槽的前表面延伸到主体区域中的源极。 虚拟发射器在与第一侧相对的沟槽的第二侧处从前表面延伸到外延区域中。 虚拟发射器缺乏源。 栅极沿面向发射极区域的沟槽的第一壁延伸。 在沟槽中以与栅极电隔离并沿着与第一壁相对的沟槽的第二壁延伸的方式形成虚拟栅极。