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公开(公告)号：US10317293B2
公开(公告)日：2019-06-11
申请号：US14958786
申请日：2015-12-03
Applicant: STMicroelectronics S.R.L.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
Abstract: A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.
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12.发明申请INTEGRATED ELECTRONIC DEVICE COMPRISING A TEMPERATURE SENSOR AND SENSING METHOD 审中-公开包含温度传感器和感应方法的集成电子设备公开(公告)号：US20160290875A1
公开(公告)日：2016-10-06
申请号：US14958786
申请日：2015-12-03
Applicant: STMicroelectronics S.R.L.
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno
IPC: G01K7/34
Abstract: A sensing element integrated in a semiconductor material chip has a sensing diode of a junction type configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode has a cathode terminal coupled to a biasing node and an anode terminal coupled to a first input of the reading stage. The biasing node receives a voltage positive with respect to the first input of the reading stage for keeping the sensing diode reverse biased.
Abstract translation: 集成在半导体材料芯片中的感测元件具有被配置为反向偏置的结型感测二极管，使得其结电容对于局部温度敏感。 读取级耦合到感测元件，用于检测感测二极管的结电容的变化，并输出与感测二极管的局部温度成比例的读取采集信号。 感测二极管具有耦合到偏置节点的阴极端子和耦合到读取级的第一输入端的阳极端子。 偏置节点相对于读取级的第一输入接收电压为正，以保持感测二极管反向偏置。
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13.发明申请公开(公告)号：US20160076962A1
公开(公告)日：2016-03-17
申请号：US14950832
申请日：2015-11-24
Applicant: STMicroelectronics S.r.l.
Inventor： Lorenzo Baldo , Michele Vaiana , Mario Chiricosta , Mario Maiore , Paul Georges Marie Rose
CPC classification number: G01L19/0092 , G01K7/01 , G01L9/0054 , G01L9/065
Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.
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公开(公告)号：US11652458B2
公开(公告)日：2023-05-16
申请号：US17372262
申请日：2021-07-09
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana , Angelo Recchia
CPC classification number: H03F3/45183 , G05F3/245 , G06G7/186 , H03B5/24 , H03F3/393 , H03F3/4565 , H03F3/45475 , H03F3/45654 , H03F3/45753 , H03F2200/171
Abstract: A thermally-isolated-metal-oxide-semiconducting (TMOS) sensor has inputs coupled to first and second nodes to receive first and second bias currents, and an output coupled to a third node. A tail has a first conduction terminal coupled to the third node and a second conduction terminal coupled to a reference voltage. A control circuit applies a control signal to a control terminal of the tail transistor based upon voltages at the first and second nodes so that a common mode voltage at the first and second nodes is equal to a reference common mode voltage. A differential current integrator has a first input terminal coupled to the second node and a second input terminal coupled to the first node, and provides an output voltage indicative of an integral of a difference between a first output current at the first input terminal and a second output current at the second input terminal.
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公开(公告)号：US11368165B2
公开(公告)日：2022-06-21
申请号：US17211355
申请日：2021-03-24
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana
Abstract: A converter circuit includes an analog-to-digital signal conversion path. An input port receives an analog input signal having an offset, and an output port delivers a digital output signal quantized over M levels. The digital output signal is sensed by a digital-to-analog feedback path, which includes a digital-to-analog converter applying to the input port an analog feedback signal produced as a function of an M-bit digital word under control of a two-state signal having alternating first and second states. M-bit digital word generation circuitry coupled to the digital-to-analog converter and sensitive to the two-state signal produces, alternately, during the first states, a first M-bit digital word, which is a function of the digital output signal quantized over M levels, and, during the second states, a second M-bit digital word, which is a function a correction value of the offset in the analog input signal.
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Patent Agency Ranking
公开(公告)号：US20210336593A1
公开(公告)日：2021-10-28
申请号：US17372262
申请日：2021-07-09
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana , Angelo Recchia
Abstract: A thermally-isolated-metal-oxide-semiconducting (TMOS) sensor has inputs coupled to first and second nodes to receive first and second bias currents, and an output coupled to a third node. A tail has a first conduction terminal coupled to the third node and a second conduction terminal coupled to a reference voltage. A control circuit applies a control signal to a control terminal of the tail transistor based upon voltages at the first and second nodes so that a common mode voltage at the first and second nodes is equal to a reference common mode voltage. A differential current integrator has a first input terminal coupled to the second node and a second input terminal coupled to the first node, and provides an output voltage indicative of an integral of a difference between a first output current at the first input terminal and a second output current at the second input terminal.
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公开(公告)号：US11095261B2
公开(公告)日：2021-08-17
申请号：US16781493
申请日：2020-02-04
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Michele Vaiana , Angelo Recchia
Abstract: An amplification interface includes a drain of a first FET connected to a first node, a drain of a second FET connected to a second node, and sources of the first and second FETs connected to a third node. First and second bias-current generators are connected to the first and second nodes. A third FET is connected between the third node and a reference voltage. A regulation circuit drives the gate of the third FET to regulate the common mode of the voltage at the first node and the voltage at the second node to a desired value. A current generator applies a correction current to the first and/or second node. A differential current integrator has a first and second inputs connected to the second and first nodes. The integrator supplies a voltage representing the integral of the difference between the currents received at the second and first inputs.
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公开(公告)号：US20200050305A1
公开(公告)日：2020-02-13
申请号：US16523302
申请日：2019-07-26
Applicant: STMicroelectronics S.r.l.
Inventor： Calogero Marco Ippolito , Angelo Recchia , Antonio Cicero , Pierpaolo Lombardo , Michele Vaiana
Abstract: A touchscreen resistive sensor includes a network of resistive sensor branches coupled to a number of sensor nodes arranged at touch locations of the touchscreen. A test sequence is performed by sequentially applying to each sensor node a reference voltage level, jointly coupling to a common line the other nodes, sensing a voltage value at the common line, and declaring a short circuit condition as a result of the voltage value sensed at the common line reaching a short circuit threshold. A current value level flowing at the sensor node to which the reference voltage level is applied is sensed and a malfunction of the resistive sensor branch coupled with the sensor node to which a reference voltage level is applied is generated as a result of the current value sensed at the sensor node reaching an upper threshold or lower threshold.
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19.发明授权Integrated transducer provided with a temperature sensor and method for sensing a temperature of the transducer 有权具有温度传感器的集成传感器和用于感测换能器温度的方法公开(公告)号：US09518886B2
公开(公告)日：2016-12-13
申请号：US14950832
申请日：2015-11-24
Applicant: STMicroelectronics S.r.l.
Inventor： Lorenzo Baldo , Michele Vaiana , Mario Chiricosta , Mario Maiore , Paul Georges Marie Rose
CPC classification number: G01L19/0092 , G01K7/01 , G01L9/0054 , G01L9/065
Abstract: A pressure sensor includes a body made of semiconductor material having a first type of conductivity and a pressure-sensitive structure having the first type of conductivity defining a suspended membrane. One or more piezoresistive elements having a second type of conductivity (P) are formed in the suspended membrane. The piezoresistive elements form, with the pressure-sensitive structure, respective junction diodes. A temperature sensing method includes: generating a first current between conduction terminals common to the junction diodes; detecting a first voltage value between the common conduction terminals when the first current is supplied; and correlating the detected first voltage value to a value of temperature of the diodes. The temperature value thus calculated can be used for correcting the voltage signal generated at output by the pressure sensor when the latter is operated for sensing an applied outside pressure which deforms the suspended membrane.
Abstract translation: 压力传感器包括由具有第一类型导电性的半导体材料制成的主体和具有限定悬浮膜的第一类型导电性的压敏结构。 在悬浮膜中形成具有第二类导电性（P）的一个或多个压电元件。 压敏元件与压敏结构形成各自的结二极管。 温度检测方法包括：在连接二极管公共的导通端子之间产生第一电流; 当提供所述第一电流时，检测所述公共导通端子之间的第一电压值; 并将检测到的第一电压值与二极管的温度值相关联。 这样计算的温度值可用于校正当压力传感器输出时产生的电压信号，该压力传感器用于感测施加的使悬浮膜变形的外部压力。
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20.发明申请INTEGRATED DEVICE OF A CAPACITIVE TYPE FOR DETECTING HUMIDITY, IN PARTICULAR MANUFACTURED USING A CMOS TECHNOLOGY 有权用于检测湿度的电容式集成装置，特别是采用CMOS技术制造公开(公告)号：US20140291778A1
公开(公告)日：2014-10-02
申请号：US14226554
申请日：2014-03-26
Inventor： Michele Vaiana , Daniele Casella , Giuseppe Bruno , Rosario Cariola , Benoit Gautheron
CPC classification number: G01N27/225 , H01L28/40
Abstract: An integrated capacitive-type humidity sensor formed in a semiconductor chip integrating a sensing capacitor and a reference capacitor. Each of the sensing and reference capacitors have at least a first electrode and at least a second electrode, the first and second electrodes of each of the sensing and reference capacitors being arranged at distance and mutually insulated. A hygroscopic layer extends on the sensing and reference capacitors and a conductive shielding region extends on the reference capacitor but not on the sensing capacitor.
Abstract translation: 集成电容型湿度传感器，形成在集成感测电容器和参考电容器的半导体芯片中。 感测和参考电容器中的每一个具有至少第一电极和至少第二电极，每个感测和参考电容器的第一和第二电极被布置成距离并相互绝缘。 吸湿层在感测和参考电容器上延伸，导电屏蔽区域在参考电容器上延伸，但不在感测电容器上。
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