公开(公告)号：US20140231938A1

公开(公告)日：2014-08-21

申请号：US14265116

申请日：2014-04-29

Applicant: STMicroelectronics S.r.l.

Inventor： Roberto Campedelli ,  Raffaella Pezzuto ,  Stefano Losa ,  Marco Mantovani ,  Mikel Azpeitia Urquia

IPC: B81B7/00 ,  B81C1/00

CPC classification number: B81B7/0006 ,  B81B3/0086 ,  B81B7/007 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2207/07 ,  B81B2207/097 ,  B81C1/00476 ,  H01L29/84

Abstract: A MEMS device formed by a body; a cavity, extending above the body; mobile and fixed structures extending above the cavity and physically connected to the body via anchoring regions; and electrical-connection regions, extending between the body and the anchoring regions and electrically connected to the mobile and fixed structures. The electrical-connection regions are formed by a conductive multilayer including a first semiconductor material layer, a composite layer of a binary compound of the semiconductor material and of a transition metal, and a second semiconductor material layer.

Abstract translation: 由身体形成的MEMS器件; 一个在身体上方延伸的空腔; 移动和固定结构延伸到腔体之上并通过锚定区域物理地连接到身体; 以及电连接区域，其在主体和锚定区域之间延伸并且电连接到移动和固定结构。 电连接区域由包括第一半导体材料层，半导体材料的二元化合物和过渡金属的复合层的导电多层和第二半导体材料层形成。

公开(公告)号：US20140231937A1

公开(公告)日：2014-08-21

申请号：US14262437

申请日：2014-04-25

Applicant: STMicroelectronics S.r.l.

Inventor： Stefano Losa ,  Raffaella Pezzuto ,  Roberto Campedelli ,  Matteo Perletti ,  Luigi Esposito ,  Mikel Azpeitia Urquia

IPC: B81C1/00 ,  B81B7/00

CPC classification number: H01L21/02178 ,  B81B7/0032 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81C1/00595 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/053 ,  H01L21/0228

Abstract: A method for manufacturing a protective layer for protecting an intermediate structural layer against etching with hydrofluoric acid, the intermediate structural layer being made of a material that can be etched or damaged by hydrofluoric acid, the method comprising the steps of: forming a first layer of aluminium oxide, by atomic layer deposition, on the intermediate structural layer; performing a thermal crystallization process on the first layer of aluminium oxide, forming a first intermediate protective layer; forming a second layer of aluminium oxide, by atomic layer deposition, above the first intermediate protective layer; and performing a thermal crystallization process on the second layer of aluminium oxide, forming a second intermediate protective layer and thereby completing the formation of the protective layer. The method for forming the protective layer can be used, for example, during the manufacturing steps of an inertial sensor such as a gyroscope or an accelerometer.

Abstract translation: 一种用于制造用于保护中间结构层以防止用氢氟酸蚀刻的保护层的方法，所述中间结构层由可被氢氟酸蚀刻或损坏的材料制成，所述方法包括以下步骤：形成第一层 氧化铝，通过原子层沉积在中间结构层上; 在第一氧化铝层上进行热结晶处理，形成第一中间保护层; 通过原子层沉积在第一中间保护层之上形成第二层氧化铝; 并在第二氧化铝层上进行热结晶处理，形成第二中间保护层，从而完成保护层的形成。 形成保护层的方法可以用于例如陀螺仪或加速度计等惯性传感器的制造步骤。