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公开(公告)号：US10126497B2
公开(公告)日：2018-11-13
申请号：US15377848
申请日：2016-12-13
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Frederic Boeuf , Charles Baudot
Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.
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公开(公告)号：US20180239088A1
公开(公告)日：2018-08-23
申请号：US15692571
申请日：2017-08-31
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Sylvain Guerber , Charles Baudot , Florian Domengie
CPC classification number: G02B6/1228 , G02B6/12002 , G02B6/126 , G02B6/13 , G02B6/138 , G02B6/14 , G02B6/262 , G02B6/305 , G02B6/43
Abstract: A photonic integrated circuit includes an optical coupling device situated between two successive interconnection metal levels. The optical coupling device includes a first optical portion that receives an optical signal having a transverse electric component in a fundamental mode and a transverse magnetic component. A second optical portion converts the transverse magnetic component of the optical signal into a converted transverse electric component in a higher order mode. A third optical portion separates the transverse electric component from the converted transverse electric component and switches the higher order mode to the fundamental mode. A fourth optical portion transmits the transverse electric component to one waveguide and transmits the converted transverse electric component to another waveguide.
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公开(公告)号：US20170336560A1
公开(公告)日：2017-11-23
申请号：US15377848
申请日：2016-12-13
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Frederic Boeuf , Charles Baudot
CPC classification number: G02B6/12002 , G02B6/12004 , G02B6/122 , G02B6/124 , G02B6/126 , G02B6/2773 , G02B6/30 , G02B6/34 , G02B6/4204 , G02B2006/12104 , G02B2006/12107 , G02B2006/12116 , G02B2006/12147
Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.
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公开(公告)号：US09791346B1
公开(公告)日：2017-10-17
申请号：US15133614
申请日：2016-04-20
Applicant: STMICROELECTRONICS SA , STMICROELECTRONICS (CROLLES 2) SAS
Inventor： Jean-Francois Carpentier , Patrick Lemaitre , Jean-Robert Manouvrier , Charles Baudot , Bertrand Borot
CPC classification number: G01M11/02 , G01R31/2656 , G01R31/27 , G01R31/2884 , G01R31/303 , G01R31/311 , G01R31/31728 , G01R35/00 , G02B6/00 , G02B6/12004 , G02B6/2808 , G02B6/34
Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.
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公开(公告)号：US09645469B2
公开(公告)日：2017-05-09
申请号：US14836011
申请日：2015-08-26
Applicant: STMICROELECTRONICS (CROLLES 2) SAS , STMICROELECTRONICS SA
Inventor： Patrick Lemaitre , Jean-Francois Carpentier , Charles Baudot , Jean-Robert Manouvrier
CPC classification number: G02F1/225 , G02F1/025 , G02F1/2257 , G02F2001/212 , G02F2203/15
Abstract: An electro-optic (E/O) device includes an asymmetric optical coupler having an input and first and second outputs, a first optical waveguide arm coupled to the first output of the first asymmetric optical coupler, and a second optical waveguide arm coupled to the second output of the first asymmetric optical coupler. At least one E/O amplitude modulator is coupled to at least one of the first and second optical waveguide arms. An optical combiner is coupled to the first and second optical waveguide arms downstream from the at least one E/O amplitude modulator.
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Patent Agency Ranking
16.发明申请INTEGRATED CIRCUIT INCLUDING AN ACTIVE DEVICE FOR CONFINEMENT OF A LIGHT FLUX 审中-公开集成电路，包括用于限制光通量的活动设备公开(公告)号：US20170059774A1
公开(公告)日：2017-03-02
申请号：US15051904
申请日：2016-02-24
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Charles Baudot
CPC classification number: G02B6/122 , G02B6/12004 , G02B2006/12097 , G02B2006/121 , G02F1/025
Abstract: An integrated circuit includes an active device for confinement of a light flux that is formed in a semiconducting substrate. A confinement rib is separated from two doped zones by two trenches. Each doped zone includes a contacting zone on an upper face. Each trench widens from a bottom wall towards the upper face of the corresponding doped zone. The widening trenches present a sidewall having a tiered profile between the trench and the doped zone. An opposite sidewall presents a straight profile.
Abstract translation: 集成电路包括用于限制形成在半导体衬底中的光束的有源器件。 限制肋通过两个沟槽与两个掺杂区分离。 每个掺杂区包括在上表面上的接触区。 每个沟槽从底壁朝向相应掺杂区的上表面变宽。 加宽的沟槽具有在沟槽和掺杂区域之间具有分层轮廓的侧壁。 相对的侧壁呈直线轮廓。
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公开(公告)号：US11709315B2
公开(公告)日：2023-07-25
申请号：US17540626
申请日：2021-12-02
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Frederic Boeuf , Charles Baudot
CPC classification number: G02B6/12002 , G02B6/122 , G02B6/124 , G02B6/12004 , G02B6/126 , G02B6/2773 , G02B6/30 , G02B6/34 , G02B6/4204 , G02B2006/12104 , G02B2006/12107 , G02B2006/12116 , G02B2006/12147
Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.
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公开(公告)号：US11231548B2
公开(公告)日：2022-01-25
申请号：US16847189
申请日：2020-04-13
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Frederic Boeuf , Charles Baudot
Abstract: A three-dimensional photonic integrated structure includes a first semiconductor substrate and a second semiconductor substrate. The first substrate incorporates a first waveguide and the second semiconductor substrate incorporates a second waveguide. An intermediate region located between the two substrates is formed by a one dielectric layer. The second substrate further includes an optical coupler configured for receiving a light signal. The first substrate and dielectric layer form a reflective element located below and opposite the grating coupler in order to reflect at least one part of the light signal.
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公开(公告)号：US11131808B2
公开(公告)日：2021-09-28
申请号：US16549843
申请日：2019-08-23
Inventor： Charles Baudot , Sylvain Guerber , Patrick Le Maitre
Abstract: In one embodiment, a waveguide includes an upstream portion, a downstream portion, and an intermediate portion between the upstream portion and the downstream portion. A first band is disposed on an insulating layer, the first band oriented along a first direction. A first lateral strip and a second lateral strip are disposed on either side of the first band, the first lateral strip and the second lateral strip being thinner or interrupted along the intermediate portion.
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公开(公告)号：US20200073153A1
公开(公告)日：2020-03-05
申请号：US16539503
申请日：2019-08-13
Applicant: STMicroelectronics (Crolles 2) SAS
Inventor： Charles Baudot
Abstract: In one embodiment, an electro-optical modulator includes a waveguide having a first major surface and a second major surface opposite the first major surface. A cavity is disposed in the waveguide. Multiple quantum wells are disposed in the cavity.
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