公开(公告)号：US07601644B2

公开(公告)日：2009-10-13

申请号：US11597169

申请日：2005-09-02

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/311

CPC分类号： B24B37/042 ,  H01L21/02019 ,  H01L21/30604

摘要： This silicon wafer production process comprises in the order indicated a planarization step, in which the front surface and the rear surface of a wafer are ground or lapped, a single-wafer acid etching step, in which an acid etching liquid is supplied to the surface of the wafer while spinning and the entire wafer surface is etched to control the surface roughness Ra to 0.20 μm or less, and a double-sided simultaneous polishing step, in which the front surface and the rear surface of the acid etched wafer are polished simultaneously. The process may comprise a single-sided polishing step, in which the top and bottom of the acid etched wafer are polished in turn, instead of the double-sided simultaneously polishing step.

摘要翻译： 该硅晶片制造方法按照顺序包括将晶片的前表面和后表面研磨或研磨的平坦化步骤，单晶片酸蚀刻步骤，其中将酸蚀刻液体供应到表面 并且整个晶片表面被蚀刻以将表面粗糙度Ra控制到0.20μm或更小，以及双面同时抛光步骤，其中酸蚀刻晶片的前表面和后表面被同时抛光 。 该方法可以包括单面抛光步骤，其中依次抛光酸蚀晶片的顶部和底部，而不是双面同时抛光步骤。

公开(公告)号：US20090181546A1

公开(公告)日：2009-07-16

申请号：US12059408

申请日：2008-03-31

申请人： Takeo KATOH ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

发明人： Takeo KATOH ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata ,  Kazushige Takaishi

IPC分类号： H01L21/306

CPC分类号： H01L21/68735 ,  H01L21/67063 ,  H01L21/67075 ,  H01L21/6708 ,  H01L21/67259

摘要： A single-wafer etching apparatus according to the present invention supplies an etchant to an upper surface of a wafer while rotating the wafer, thereby etching the upper surface of the wafer. Further, wafer elevating means moves up and down the wafer, and a lower surface blow mechanism which blows off the etchant flowing down on an edge surface of the wafer toward a radially outer side of the wafer by injection of a gas is fixed and provided without rotating together with the wafer. Furthermore, gap adjusting means controls the wafer elevating means based on detection outputs from gap detecting means for detecting a gap between the wafer and the lower surface blow mechanism, thereby adjusting the gap. The apparatus according to the present invention uniformly etches the edge portion without collapsing a chamfered shape of the edge portion of the wafer, and prevents a glitter from being produced on the edge surface of the wafer.

摘要翻译： 根据本发明的单晶片蚀刻装置在旋转晶片的同时向晶片的上表面提供蚀刻剂，从而蚀刻晶片的上表面。 此外，晶片升降装置上下移动晶片，并且通过注入气体将沿着晶片的边缘表​​面向下流动的蚀刻剂朝向晶片的径向外侧吹出的下表面吹风机构被固定并且没有 与晶片一起旋转。 此外，间隙调整装置基于来自间隙检测装置的检测输出来控制晶片升降装置，用于检测晶片和下表面吹风机构之间的间隙，从而调整间隙。 根据本发明的装置均匀地蚀刻边缘部分而不会塌陷晶片的边缘部分的倒角形状，并且防止在晶片的边缘表​​面上产生闪光。

公开(公告)号：US20090053894A1

公开(公告)日：2009-02-26

申请号：US12162732

申请日：2007-01-24

申请人： Sakae Koyata ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Takeo Katoh

发明人： Sakae Koyata ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Takeo Katoh

IPC分类号： H01L21/302

CPC分类号： H01L21/30604 ,  C30B25/02 ,  C30B25/18 ,  C30B29/06 ,  H01L21/02008 ,  H01L21/02019 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02634 ,  H01L21/02658

摘要： A method for manufacturing an epitaxial wafer that can reduce occurrence of a surface defect or a slip formed on an epitaxial layer is provided. The manufacturing method is characterized by comprising: a smoothing step of controlling application of an etchant to a wafer surface in accordance with a surface shape of a silicon wafer to smooth the wafer surface; and an epitaxial layer forming step of forming an epitaxial layer formed of a silicon single crystal on the surface of the wafer based on epitaxial growth.

摘要翻译： 提供一种制造能够减少在外延层上形成的表面缺陷或滑动的发生的外延晶片的方法。 该制造方法的特征在于包括：平滑步骤，根据硅晶片的表面形状控制蚀刻剂对晶片表面的施加，以平滑晶片表面; 以及基于外延生长在晶片的表面上形成由硅单晶形成的外延层的外延层形成步骤。

公开(公告)号：US07488400B2

公开(公告)日：2009-02-10

申请号：US11582880

申请日：2006-10-17

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/306 ,  H01L21/302

CPC分类号： H01L21/6708 ,  H01L21/67075 ,  Y10S134/902

摘要： An apparatus for etching a wafer by a single-wafer process comprises a fluid supplying device which feeds an etching fluid on a wafer, and a wafer-chuck for horizontally holding the wafer. The wafer-chuck is equipped with a gas injection device for injecting a gas to the wafer, a first fluid-aspirating device, and a second fluid-aspirating device. The etching fluid supplied on the wafer is spread by a rotation of the wafer. The etching fluid is scattered by a centrifugal force, or flows down over an edge portion of the wafer and is blown-off by the gas injected from the gas injection unit, and is aspirated by the first fluid-aspirating device or the second fluid-aspirating device.

摘要翻译： 用于通过单晶片工艺蚀刻晶片的设备包括：向晶片上供给蚀刻流体的流体供应装置和用于水平保持晶片的晶片卡盘。 晶片卡盘配备有用于向晶片注入气体的气体注入装置，第一流体抽吸装置和第二流体抽吸装置。 提供在晶片上的蚀刻流体通过晶片的旋转而扩展。 蚀刻流体通过离心力而被散射，或者向下流过晶片的边缘部分，并且被从气体注入单元注入的气体吹出，并且被第一流体抽吸装置或第二流体吸入装置抽吸， 吸气装置

公开(公告)号：US08466071B2

公开(公告)日：2013-06-18

申请号：US12162829

申请日：2007-01-24

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/302

CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.

摘要翻译： 本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。 在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。 在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴， 然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

公开(公告)号：US07906438B2

公开(公告)日：2011-03-15

申请号：US11669431

申请日：2007-01-31

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

摘要： An object of the present invention is to provide a single wafer etching apparatus realizing a high flatness of wafers and an increase in productivity thereof. In the single wafer etching apparatus, a single thin disk-like wafer sliced from a silicon single crystal ingot is mounted on a wafer chuck and spun thereon, and an overall front surface of the wafer is etched with an etching solution supplied thereto by centrifugal force generated by spinning the wafer 11. The singe wafer etching apparatus includes a plurality of supply nozzles 26, 27 capable of discharging the etching solution 14 from discharge openings 26a, 27a onto the front surface of the wafer 11, nozzle-moving devices each capable of independently moving the plurality of supply nozzles 28, 29, and an etching solution supplying device 30 for supplying the etching solution 14 to each of the plurality of supply nozzles and discharging the etching solution 14 from each of the discharge openings to the front surface of the wafer 11.

摘要翻译： 本发明的目的是提供一种实现晶片的高平坦度和提高其生产率的单晶片蚀刻装置。 在单晶片蚀刻装置中，将从硅单晶锭切片的单个薄片状晶片安装在晶片卡盘上并在其上纺丝，并且用通过离心力供给的蚀刻溶液蚀刻晶片的整个前表面 单晶晶片蚀刻装置包括能够将蚀刻溶液14从排出口26a，27a排出到晶片11的前表面上的多个供给喷嘴26,27，各喷嘴移动装置 独立地移动多个供给喷嘴28,29，以及用于将蚀刻液14供给到多个供给喷嘴中的每一个的蚀刻液供给装置30，将蚀刻液14从各喷出口排出到 晶片11。

公开(公告)号：US07648890B2

公开(公告)日：2010-01-19

申请号：US11504969

申请日：2006-08-15

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/30 ,  H01L21/46

CPC分类号： H01L21/6708 ,  H01L21/02019 ,  H01L21/30604

摘要： A process for producing a silicon wafer comprising a single-wafer etching step of performing an etching by supplying an etching solution through a supplying-nozzle to a surface of a single and a thin-discal wafer obtained by slicing a silicon single crystal ingot and rotating the wafer to spread the etching solution over all the surface of the wafer; and a grinding step of grinding the surface of the wafer, in this order, wherein the etching solution used in the single-wafer etching step is an aqueous acid solution which contains hydrogen fluoride, nitric acid, and phosphoric acid in an amount such that the content of which by weight % at a mixing rate of fluoric acid:nitric acid:phosphoric acid is 0.5 to 40%:5 to 50%:5 to 70%, respectively.

摘要翻译： 1.一种硅晶片的制造方法，其特征在于，具有通过将供给喷嘴供给蚀刻液的蚀刻液进行蚀刻的单晶片蚀刻工序，所述蚀刻液通过将硅单晶锭切片而得到的单晶片和薄片晶片的表面旋转， 晶片将蚀刻溶液铺展在晶片的所有表面上; 以及按照该顺序研磨晶片的表面的研磨步骤，其中在单晶片蚀刻步骤中使用的蚀刻溶液是含有氟化氢，硝酸和磷酸的酸性水溶液，其含量使得 其含量以氟酸：硝酸：磷酸的混合比例为0.5〜40％：5〜50％：5〜70％。

公开(公告)号：US20090004876A1

公开(公告)日：2009-01-01

申请号：US12162829

申请日：2007-01-24

申请人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

发明人： Sakae Koyata ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Kazushige Takaishi ,  Takeo Katoh

IPC分类号： H01L21/306

CPC分类号： H01L21/30604 ,  H01L21/02019 ,  H01L21/6708

摘要： An object of the present invention is to provide a method for etching a single wafer, which effectively realizes a high flatness of wafer and an increase in productivity thereof. In a method for etching a single wafer, a single thin disk-like wafer sliced from a silicon single crystal ingot is spun, and a front surface of the wafer is etched with an etching solution supplied thereto. In the method, a plurality of supply nozzles are disposed above and opposite to the front surface of the wafer at different portions in the radial direction of the wafer, respectively; and then one or more conditions selected from the group consisting of temperatures, kinds, and supply flow rates of etching solutions from the plurality of supply nozzles are changed.

摘要翻译： 本发明的目的是提供一种用于蚀刻单晶片的方法，其有效地实现了晶片的高平坦度和生产率的提高。 在用于蚀刻单个晶片的方法中，旋转从硅单晶锭切片的单个薄盘状晶片，并且用提供给其的蚀刻溶液蚀刻晶片的前表面。 在该方法中，分别在晶片的径向的不同部分分别在晶片的正面上方设置多个供给喷嘴， 然后改变选自多个供应喷嘴的蚀刻溶液的温度，种类和供给流量的一个或多个条件。

公开(公告)号：US20080214094A1

公开(公告)日：2008-09-04

申请号：US12031917

申请日：2008-02-15

申请人： Takeo KATOH ,  Yasuyuki Hashimoto ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata

发明人： Takeo KATOH ,  Yasuyuki Hashimoto ,  Kazushige Takaishi ,  Tomohiro Hashii ,  Katsuhiko Murayama ,  Sakae Koyata

IPC分类号： B24B7/24 ,  B28D1/02 ,  B24B7/26 ,  B24B9/08

CPC分类号： B24B37/042 ,  B24B9/14 ,  B24B37/08 ,  H01L21/02008 ,  H01L21/02021

摘要： A method for manufacturing a silicon wafer comprises a slicing step of a silicon single crystal ingot to obtain sliced wafers, a single-side grinding step to grind only one side of a wafer, and a smoothing step to smooth the other side of the wafer by controlling application of etchant depending on surface profile of the other side of the wafer. According to a method of the present invention a silicon wafer that has high flatness, is removed machine working damage, and is reduced of profile change of chamfer to be minimal can be manufactured.

摘要翻译： 硅晶片的制造方法包括：硅单晶锭的切片工序，得到切片晶片，仅研磨晶片的一侧的单面研磨工序，以及使晶片的另一侧平滑化的平滑化工序 控制取决于晶片另一侧的表面轮廓的蚀刻剂的应用。 根据本发明的方法，可以制造具有高平整度的硅晶片，机械加工损坏被去除，并且可以制造倒角的轮廓变化最小化。

公开(公告)号：US20060169667A1

公开(公告)日：2006-08-03

申请号：US11345009

申请日：2006-01-31

申请人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

发明人： Sakae Koyata ,  Yuichi Kakizono ,  Tomohiro Hashii ,  Katsuhiko Murayama

IPC分类号： B44C1/22 ,  H01L21/461 ,  C09K13/00 ,  C23F1/00

CPC分类号： H01L21/02008 ,  C30B33/10

摘要： A method for manufacturing a silicon wafer includes a planarizing process 13 for polishing or lapping the upperside and lowerside surfaces of a thin disk-shaped silicon wafer obtained by slicing a silicon single crystal ingot, an etching process for dipping the silicon wafer into the etching liquid wherein silica powder is dispersed uniformly in an alkali aqueous solution, thereby etching the upperside and lowerside surfaces of the silicon wafer, and a both-side simultaneous polishing process 16 for polishing the upperside and lowerside surfaces of the etched silicon wafer simultaneously or a one-side polishing process for polishing the upperside and lowerside surfaces of the etched silicon wafer one after another, in this order.

摘要翻译： 一种硅晶片的制造方法，其特征在于，包括：通过对硅单晶锭进行切片而得到的薄盘状硅晶片的上下表面进行抛光或研磨的平坦化工序13，将硅晶片浸入蚀刻液中的蚀刻工序 其中二氧化硅粉末均匀地分散在碱性水溶液中，从而蚀刻硅晶片的上侧和下侧表面，以及用于同时抛光被蚀刻的硅晶片的上侧和下侧表面的双面同时抛光工艺16， 按照此顺序一次一个地抛光蚀刻的硅晶片的上侧和下侧表面的侧面抛光工艺。