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公开(公告)号：US09772709B2
公开(公告)日：2017-09-26
申请号：US15149759
申请日：2016-05-09
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Young-Dae Kim , Jong-Hyun Choi , Choong-Youl Im , Il-Jeong Lee
CPC classification number: G06F3/0412 , G06F3/044 , G06F2203/04111 , H01L27/323 , H01L27/3244 , H01L2251/308 , H01L2251/5338 , H01L2251/5392
Abstract: An organic light emitting display device having an electrostatic capacitive type touch panel function with reduced thickness and improved luminance. A display panel of the organic light emitting display device includes a substrate, a display unit having a plurality of pixels on the substrate, and a touch sensing unit on the display unit. The touch sensing unit includes an encapsulation substrate and a capacitive pattern layer on a side of the encapsulation substrate facing the display unit. The capacitive pattern layer has a plurality of openings corresponding in position to the plurality of pixels.
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公开(公告)号：US20160181387A1
公开(公告)日：2016-06-23
申请号：US15054037
申请日：2016-02-25
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Yoon Kim , Il-Jeong Lee , Choong-Youl Im , Do-Hyun Kwon
IPC: H01L29/45 , H01L27/12 , H01L27/32 , H01L29/786
CPC classification number: H01L29/458 , H01L27/1214 , H01L27/1222 , H01L27/1248 , H01L27/127 , H01L27/3248 , H01L27/3262 , H01L29/78666 , H01L29/78675 , H01L2251/5315
Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.
Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。
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公开(公告)号：US09281319B2
公开(公告)日：2016-03-08
申请号：US14244584
申请日：2014-04-03
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Yoon Kim , Il-Jeong Lee , Choong-Youl Im , Do-Hyun Kwon
CPC classification number: H01L29/458 , H01L27/1214 , H01L27/1222 , H01L27/1248 , H01L27/127 , H01L27/3248 , H01L27/3262 , H01L29/78666 , H01L29/78675 , H01L2251/5315
Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.
Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。
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14.发明申请公开(公告)号：US20140239270A1
公开(公告)日：2014-08-28
申请号：US13961823
申请日：2013-08-07
Applicant: SAMSUNG DISPLAY CO., LTD
Inventor： Moon-Soon Ko , Il-Jung Lee , Choong-Youl Im , Do-Hyun Kwon , Ju-Won Yoon , Min-Woo Woo
CPC classification number: H01L27/1255 , H01L27/1237 , H01L27/3265 , H01L27/3276
Abstract: A thin film transistor array substrate includes a plurality of pixels, each of the pixels including a capacitor comprising a first electrode, and a second electrode located above the first electrode, a data line extending in a first direction, configured to provide a data signal, located above the capacitor, and overlapping a part of the capacitor, and a driving voltage line configured to supply a driving voltage, located between the capacitor and the data line, and comprising a first line extending in the first direction, and a second line extending in a second direction substantially perpendicular to the first direction.
Abstract translation: 薄膜晶体管阵列基板包括多个像素，每个像素包括包括第一电极的电容器和位于第一电极上方的第二电极，沿第一方向延伸的数据线，被配置为提供数据信号， 位于电容器上方并与电容器的一部分重叠，驱动电压线被配置为提供位于电容器和数据线之间的驱动电压，并且包括沿第一方向延伸的第一线，以及第二线延伸 在基本上垂直于第一方向的第二方向上。
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公开(公告)号：US20160218164A1
公开(公告)日：2016-07-28
申请号：US15088445
申请日：2016-04-01
Applicant: Samsung Display Co., Ltd.
Inventor： Choong-Youl Im , Il-Jeong Lee , Do-Hyun Kwon , Ju-Won Yoon , Moo-Soon Ko , Min-Woo Woo
CPC classification number: H01L27/3265 , H01L27/3248 , H01L27/3262 , H01L28/40 , H01L28/60 , H01L29/4908 , H01L51/52 , H01L2924/0002 , H01L2924/00
Abstract: An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a driving thin film transistor including a driving gate electrode connected to the capacitor; and an organic light emitting element connected to the driving thin film transistor, where the capacitor includes: a first capacitor electrode on the substrate insulating layer; a second capacitor electrode on the first capacitor electrode; a capacitor insulating layer between the first capacitor electrode and the second capacitor electrode and contacting the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer; and an auxiliary electrode contacting at least one of the first capacitor electrode or the second capacitor electrode.
Abstract translation: 有机发光二极管显示器包括：基板; 衬底上的衬底绝缘层; 基板绝缘层上的电容器; 驱动薄膜晶体管，其包括连接到所述电容器的驱动栅电极; 以及连接到所述驱动薄膜晶体管的有机发光元件，其中所述电容器包括：在所述基板绝缘层上的第一电容器电极; 第一电容器电极上的第二电容器电极; 在所述第一电容器电极和所述第二电容器电极之间的电容器绝缘层，并且与所述第一电容器电极和所述第二电容器电极接触，所述电容器绝缘层的介电常数比所述基板绝缘层高; 和与第一电容器电极或第二电容器电极中的至少一个接触的辅助电极。
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Patent Agency Ranking
公开(公告)号：US09362347B2
公开(公告)日：2016-06-07
申请号：US14578844
申请日：2014-12-22
Applicant: Samsung Display Co., Ltd.
Inventor： Ju-Won Yoon , Il-Jeong Lee , Choong-Youl Im
CPC classification number: H01L27/3276 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L27/3265 , H01L51/5012 , H01L51/5206 , H01L51/5221
Abstract: An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a plurality of pixels. Each of the pixels includes a first insulating layer and first and second signal lines spaced apart from each other. At least a portion of the first and second signal lines is formed over the first insulating layer. Each pixel also includes a second insulating layer interposed between the first and second signal lines. The second insulating layer has a lower permittivity that the first insulating layer.
Abstract translation: 公开了一种有机发光二极管（OLED）显示器。 在一个方面，OLED显示器包括多个像素。 每个像素包括第一绝缘层和彼此间隔开的第一和第二信号线。 第一和第二信号线的至少一部分形成在第一绝缘层上。 每个像素还包括置于第一和第二信号线之间的第二绝缘层。 第二绝缘层具有较低介电常数，即第一绝缘层。
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17.发明授权Thin film transistor array substrate and organic light-emitting display apparatus including the same 有权薄膜晶体管阵列基板和包括该薄膜晶体管阵列基板的有机发光显示装置公开(公告)号：US09231000B2
公开(公告)日：2016-01-05
申请号：US13961823
申请日：2013-08-07
Applicant: SAMSUNG DISPLAY CO., LTD.
Inventor： Moon-Soon Ko , Il-Jung Lee , Choong-Youl Im , Do-Hyun Kwon , Ju-Won Yoon , Min-Woo Woo
CPC classification number: H01L27/1255 , H01L27/1237 , H01L27/3265 , H01L27/3276
Abstract: A thin film transistor array substrate includes a plurality of pixels, each of the pixels including a capacitor comprising a first electrode, and a second electrode located above the first electrode, a data line extending in a first direction, configured to provide a data signal, located above the capacitor, and overlapping a part of the capacitor, and a driving voltage line configured to supply a driving voltage, located between the capacitor and the data line, and comprising a first line extending in the first direction, and a second line extending in a second direction substantially perpendicular to the first direction.
Abstract translation: 薄膜晶体管阵列基板包括多个像素，每个像素包括包括第一电极的电容器和位于第一电极上方的第二电极，沿第一方向延伸的数据线，被配置为提供数据信号， 位于电容器上方并与电容器的一部分重叠，驱动电压线被配置为提供位于电容器和数据线之间的驱动电压，并且包括沿第一方向延伸的第一线，以及第二线延伸 在基本上垂直于第一方向的第二方向上。
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18.发明申请THIN-FILM TRANSISTOR ARRAY SUBSTRATE, DISPLAY DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR ARRAY SUBSTRATE 有权薄膜晶体管阵列基板，包括其的显示装置以及制造薄膜晶体管阵列基板的方法公开(公告)号：US20150048320A1
公开(公告)日：2015-02-19
申请号：US14243694
申请日：2014-04-02
Applicant: Samsung Display Co., Ltd.
Inventor： Jeong-Ho Lee , Su-Yeon Sim , Ju-Won Yoon , Seung-Min Lee , Wang-Woo Lee , Il-Jeong Lee , Jung-Kyu Lee , Choong-Youl Im
CPC classification number: H01L27/1255 , H01L27/1237 , H01L27/1288
Abstract: A method of manufacturing a thin film transistor (TFT) array substrate is disclosed. In one aspect, the method includes forming an active layer on a substrate, forming a first insulating layer on the substrate to cover the active layer, and forming a first gate electrode on the first insulating layer in an area corresponding to the active layer, doping the active layer with ion impurities, forming a second insulating layer on the first insulating layer to cover the first gate electrode, performing an annealing process on the active layer, forming a lower electrode of a capacitor on the second insulating layer, forming a third insulating layer on the second insulating layer to cover the lower electrode, wherein the third insulating layer has a dielectric constant that is greater than those of the first and second insulating layers, and forming an upper electrode of the capacitor on the third insulating layer.
Abstract translation: 公开了制造薄膜晶体管（TFT）阵列基板的方法。 一方面，该方法包括在衬底上形成有源层，在衬底上形成第一绝缘层以覆盖有源层，以及在与有源层对应的区域中的第一绝缘层上形成第一栅电极，掺杂 所述有源层具有离子杂质，在所述第一绝缘层上形成第二绝缘层以覆盖所述第一栅电极，对所述有源层执行退火处理，在所述第二绝缘层上形成电容器的下电极，形成第三绝缘层 在第二绝缘层上覆盖下电极，其中第三绝缘层的介电常数大于第一和第二绝缘层的介电常数，并且在第三绝缘层上形成电容器的上电极。
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公开(公告)号：US20140217415A1
公开(公告)日：2014-08-07
申请号：US14244584
申请日：2014-04-03
Applicant: Samsung Display Co., Ltd.
Inventor： Jong-Yoon Kim , Il-Jeong Lee , Choong-Youl Im , Do-Hyun Kwon
IPC: H01L27/12
CPC classification number: H01L29/458 , H01L27/1214 , H01L27/1222 , H01L27/1248 , H01L27/127 , H01L27/3248 , H01L27/3262 , H01L29/78666 , H01L29/78675 , H01L2251/5315
Abstract: A thin film transistor including: a substrate; an active layer formed over the substrate; a gate insulating layer formed over the active layer; a gate electrode formed over the gate insulating layer; an interlayer insulating layer formed over the gate electrode; and source and drain electrodes that contact the active layer via the interlayer insulating layer. The source and drain electrodes may have a structure including an aluminum (Al) layer, an aluminum-nickel alloy (AlNiX) layer, and an indium tin oxide (ITO) layer, which are sequentially stacked.
Abstract translation: 1.一种薄膜晶体管，包括：基板; 形成在衬底上的有源层; 形成在有源层上的栅极绝缘层; 形成在所述栅绝缘层上的栅电极; 形成在所述栅电极上的层间绝缘层; 以及经由层间绝缘层与有源层接触的源极和漏极。 源电极和漏电极可以具有依次堆叠的铝（Al）层，铝镍合金（AlNiX）层和氧化铟锡（ITO）层的结构。
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公开(公告)号：US09941342B2
公开(公告)日：2018-04-10
申请号：US15088445
申请日：2016-04-01
Applicant: Samsung Display Co., Ltd.
Inventor： Choong-Youl Im , Il-Jeong Lee , Do-Hyun Kwon , Ju-Won Yoon , Moo-Soon Ko , Min-Woo Woo
CPC classification number: H01L27/3265 , H01L27/3248 , H01L27/3262 , H01L28/40 , H01L28/60 , H01L29/4908 , H01L51/52 , H01L2924/0002 , H01L2924/00
Abstract: An organic light emitting diode display includes: a substrate; a substrate insulating layer on the substrate; a capacitor on the substrate insulating layer; a driving thin film transistor including a driving gate electrode connected to the capacitor; and an organic light emitting element connected to the driving thin film transistor, where the capacitor includes: a first capacitor electrode on the substrate insulating layer; a second capacitor electrode on the first capacitor electrode; a capacitor insulating layer between the first capacitor electrode and the second capacitor electrode and contacting the first capacitor electrode and the second capacitor electrode, the capacitor insulating layer having a higher dielectric constant than the substrate insulating layer; and an auxiliary electrode contacting at least one of the first capacitor electrode or the second capacitor electrode.
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