公开(公告)号：US20220399428A1

公开(公告)日：2022-12-15

申请号：US17687702

申请日：2022-03-07

Applicant: Samsung Display Co., Ltd.

Inventor： Myoung Geun CHA ,  Sang Gun CHOI ,  Tae Wook KANG ,  Bum Mo SUNG ,  Yun Jung OH ,  Yong Su LEE

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A display device includes: a substrate; a transistor disposed on the substrate; a first electrode connected to the transistor; an emission layer disposed on the first electrode; a second electrode disposed on the emission layer; a common voltage line connected to the second electrode; and a third electrode and a fourth electrode disposed between the common voltage line and the second electrode.

公开(公告)号：US20210151475A1

公开(公告)日：2021-05-20

申请号：US17071579

申请日：2020-10-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub KIM ,  Keun Woo KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Myoung Geun CHA ,  Ki Seok CHOI ,  Sang Gun CHOI

IPC: H01L27/12 ,  H01L27/32 ,  G09G3/32 ,  H01L21/265 ,  H01L21/225 ,  H01L21/28

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US20230232671A1

公开(公告)日：2023-07-20

申请号：US18122174

申请日：2023-03-16

Applicant: Samsung Display Co., Ltd.

Inventor： Joon Woo BAE ,  Mee Jae KANG ,  Thanh Tien NGUYEN ,  Kyoung Won LEE ,  Yong Su LEE ,  Jae Seob LEE ,  Gyoo Chul JO ,  Myoung Geun CHA

IPC: H10K59/126 ,  H10K59/131 ,  H10K59/121

CPC classification number: H10K59/126 ,  H10K59/131 ,  H10K59/1213 ,  H10K59/1216

Abstract: An organic light emitting diode display includes a substrate, an overlap layer on the substrate, a semiconductor layer on the overlap layer, a first gate conductor on the semiconductor layer, a second gate conductor on the first gate conductor, a data conductor on the second gate conductor, a driving transistor on the overlap layer, and an organic light emitting diode connected with the driving transistor. The driving transistor includes, in the semiconductor layer, a first electrode, a second electrode, with a channel therebetween. A gate electrode of the first gate conductor overlaps the channel. The overlap layer overlaps the channel of the driving transistor and at least a portion of the first electrode. A storage line of the second gate conductor receives a driving voltage through a driving voltage line in the data conductor. The overlap layer receives a constant voltage.

公开(公告)号：US20230215954A1

公开(公告)日：2023-07-06

申请号：US18176454

申请日：2023-02-28

Applicant: SAMSUNG DISPLAY CO., LTD

Inventor： YONG SU LEE ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA ,  Sang Ho PARK ,  Se Hwan YU ,  Chong Sup CHANG ,  Dae Ho KIM ,  Jae Neung Kim ,  Myoung Geun CHA ,  Sang Gab KIM ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/66 ,  H01L29/417

CPC classification number: H01L29/78633 ,  H01L29/78618 ,  H01L27/1288 ,  H01L27/124 ,  H01L29/7869 ,  H01L27/1225 ,  H01L29/78696 ,  H01L29/66969 ,  H01L29/41733 ,  H10K59/1213

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20210202655A1

公开(公告)日：2021-07-01

申请号：US17079278

申请日：2020-10-23

Applicant: Samsung Display Co., Ltd.

Inventor： Hyun Min CHO ,  Tae Wook KANG ,  Sang Gun CHOI ,  Shin Il CHOI ,  Yun Jung OH ,  Myoung Geun CHA

IPC: H01L27/32 ,  H01L51/56 ,  H01L51/52

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

公开(公告)号：US20150194534A1

公开(公告)日：2015-07-09

申请号：US14666461

申请日：2015-03-24

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su LEE ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA ,  Sang Ho PARK ,  Se Hwan YU ,  Chong Sup CHANG ,  Dae Ho KIM ,  Jae Neung KIM ,  Myoung Geun CHA ,  Sang Gab KIM ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L29/417

CPC classification number: H01L29/78633 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1288 ,  H01L27/3262 ,  H01L29/41733 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/7869 ,  H01L29/78696

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

Abstract translation: 根据本发明的示例性实施例的薄膜晶体管包括氧化物半导体。 源电极和漏电极彼此面对。 源电极和漏电极分别位于氧化物半导体的两个相对侧。 低导电区域位于源电极或漏电极与氧化物半导体之间。 绝缘层位于氧化物半导体和低导电区域上。 栅电极位于绝缘层上。 绝缘层覆盖氧化物半导体和低导电区域。 低导电区域的载流子浓度低于源电极或漏电极的载流子浓度。

公开(公告)号：US20240413248A1

公开(公告)日：2024-12-12

申请号：US18808905

申请日：2024-08-19

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Yong Su LEE ,  Yoon Ho KHANG ,  Dong Jo KIM ,  Hyun Jae NA ,  Sang Ho PARK ,  Se Hwan YU ,  Chong Sup CHANG ,  Dae Ho KIM ,  Jae Neung KIM ,  Myoung Geun CHA ,  Sang Gab KIM ,  Yu-Gwang JEONG

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417 ,  H01L29/66 ,  H10K59/121

Abstract: A thin film transistor according to an exemplary embodiment of the present invention includes an oxide semiconductor. A source electrode and a drain electrode face each other. The source electrode and the drain electrode are positioned at two opposite sides, respectively, of the oxide semiconductor. A low conductive region is positioned between the source electrode or the drain electrode and the oxide semiconductor. An insulating layer is positioned on the oxide semiconductor and the low conductive region. A gate electrode is positioned on the insulating layer. The insulating layer covers the oxide semiconductor and the low conductive region. A carrier concentration of the low conductive region is lower than a carrier concentration of the source electrode or the drain electrode.

公开(公告)号：US20240397773A1

公开(公告)日：2024-11-28

申请号：US18791102

申请日：2024-07-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Hyun Min CHO ,  Tae Wook KANG ,  Sang Gun CHOI ,  Shin Il CHOI ,  Yun Jung OH ,  Myoung Geun CHA

IPC: H10K59/131 ,  H10K50/824 ,  H10K59/121 ,  H10K59/124 ,  H10K71/00

Abstract: A display apparatus includes: a base substrate; a thin film transistor and a power supply wire on the base substrate; a first electrode on the base substrate, and electrically connected to the thin film transistor; a light emitting layer and a common layer on the first electrode; and a second electrode on the common layer. The power supply wire includes: a first conductive layer; a second conductive layer on the first conductive layer; and a third conductive layer on the second conductive layer. The third conductive layer protrudes more than the second conductive layer on a side surface of the power supply wire, and the second electrode contacts a side surface of the second conductive layer.

公开(公告)号：US20240304726A1

公开(公告)日：2024-09-12

申请号：US18665023

申请日：2024-05-15

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub KIM ,  Keun Woo KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Myoung Geun CHA ,  Ki Seok CHOI ,  Sang Gun CHOI

IPC: H01L29/786 ,  G09G3/32 ,  H01L21/225 ,  H01L21/265 ,  H01L21/28 ,  H01L27/12 ,  H01L29/66 ,  H10K59/12 ,  H10K59/121

CPC classification number: H01L29/78603 ,  H01L27/1274 ,  H01L29/6675 ,  H10K59/1213 ,  G09G3/32 ,  G09G2300/0809 ,  H01L21/2253 ,  H01L21/26533 ,  H01L21/28158 ,  H01L27/1255 ,  H10K59/1201

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.

公开(公告)号：US20230223478A1

公开(公告)日：2023-07-13

申请号：US18122815

申请日：2023-03-17

Applicant: Samsung Display Co., LTD.

Inventor： Sang Sub KIM ,  Keun Woo KIM ,  Ji Yeong SHIN ,  Yong Su LEE ,  Myoung Geun CHA ,  Ki Seok CHOI ,  Sang Gun CHOI

IPC: H10K59/12 ,  H01L29/66

CPC classification number: H10K59/1201 ,  H01L29/6675 ,  H10K59/1213

Abstract: A display device and method of fabricating the same are provided. The display device includes a substrate and a thin-film transistor formed on the substrate. The thin-film transistor includes a lower gate conductive layer disposed on the substrate, and a lower gate insulating film disposed on the lower gate conductive layer The lower gate insulating film includes an upper surface and sidewalls. The thin-film transistor includes an active layer disposed on the upper surface of the lower gate insulating film, the active layer including sidewalls. At least one of the sidewalls of the lower gate insulating film and at least one of the sidewalls of the active layer are aligned with each other.