Thin film transistor substrate and organic light-emitting display using the same

    公开(公告)号:US10950678B2

    公开(公告)日:2021-03-16

    申请号:US15199469

    申请日:2016-06-30

    Abstract: A thin film transistor substrate that includes a substrate, a lower gate electrode arranged on the substrate, a semiconductor layer arranged on the substrate and overlapping the lower gate electrode, the semiconductor layer including a channel region interposed between a source region and a drain region, and an upper gate electrode arranged on the substrate and overlapping the semiconductor layer, the upper gate electrode being arranged on an opposite side of the semiconductor layer than the lower gate electrode, wherein at least one of the lower gate electrode and the upper gate electrode is perforated by an aperture to reduce a parasitic capacitance between the upper and lower gate electrodes.

    DISPLAY APPARATUS
    13.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240170470A1

    公开(公告)日:2024-05-23

    申请号:US18513697

    申请日:2023-11-20

    CPC classification number: H01L25/167 H01L25/0753 H01L33/62

    Abstract: A display apparatus includes a transistor, a light-emitting diode including a first electrode electrically connected to the transistor, a second electrode, and an intermediate layer between the first and second electrodes, a bus line adjacent to the light-emitting diode, a first insulating layer on the bus line, a second insulating layer on the first insulating layer, a conductive layer electrically connected to the bus line through a first opening in the first insulating layer and a second opening in the second insulating layer, a third insulating layer on the second insulating layer and including a third opening overlapping the first opening and the second opening, and a fourth insulating layer on the third insulating layer and including a fourth opening overlapping the conductive layer, wherein a portion of the second electrode of the light-emitting diode is in contact with the conductive layer through the third opening and the fourth opening.

    Display apparatus
    14.
    发明授权

    公开(公告)号:US10748892B2

    公开(公告)日:2020-08-18

    申请号:US16124519

    申请日:2018-09-07

    Abstract: A display apparatus that can reduce defects caused by static electricity, includes a substrate unit that includes at least one organic insulating layer, at least one inorganic insulating layer, and a first conductive layer that includes doped amorphous silicon (a-Si) that is disposed between the at least one organic insulating layer and the at least one inorganic insulating layer; and a thin film transistor unit disposed on the substrate portion and that includes a thin film transistor.

    Display device
    16.
    发明授权

    公开(公告)号:US12148871B2

    公开(公告)日:2024-11-19

    申请号:US17565088

    申请日:2021-12-29

    Abstract: A display device includes a driving element disposed in a display area, an emission element disposed in the display area and electrically connected to the driving element, and a connection pad disposed in a pad area adjacent to the display area and electrically connected to the driving element. The connection pad includes a first pad conductive layer including a metal and a second pad conductive layer including indium tin zinc oxide (ITZO). The indium tin zinc oxide of the second pad conductive layer includes about 20 at % to about 35 at % of indium (In), about 2 at % to about 20 at % of zinc (Zn), about 4 at % to about 6 at % of tin (Sn), and a remainder of oxygen (O).

    ETCHANT
    17.
    发明公开
    ETCHANT 审中-公开

    公开(公告)号:US20230295504A1

    公开(公告)日:2023-09-21

    申请号:US18179919

    申请日:2023-03-07

    CPC classification number: C09K13/08

    Abstract: An etchant including: persulfate; a fluorine-containing compound; a chlorine-containing compound; a cyclic amine compound; an inorganic acid; a first compound; and water, wherein the first compound is a compound containing: a sulfonic group, a sulfonic acid group, or a combination thereof; and an amine group, and an interfacial permeation inhibition index (Y) of the etchant is a value of at least about 0.10 and not more than about 0.35, the interfacial permeation inhibition index (Y) being a value calculated by Equation 1:


    Y=1.4×10−4×M(X1)+1.3×10−4×M(X2)+1.45×10−3×M(X3)+1.5×10−5×M(X1)×M(X2)+1.6×10−3M(X1)×M(X3)+6.5×10−4×M(X2)×M(X3)  Equation 1

    The description of Equation 1 is as in the specification.

    DISPLAY APPARATUS
    18.
    发明申请

    公开(公告)号:US20220285595A1

    公开(公告)日:2022-09-08

    申请号:US17449414

    申请日:2021-09-29

    Abstract: A display apparatus includes a display area including pixels on a substrate, a pad portion on the substrate in a non-display area outside the display area, and including a conductive line, a first dummy line around the conductive line, and a first anti-fuse and a second anti-fuse adjacent to the conductive line and spaced apart from each other in a lengthwise direction of the conductive line, the first anti-fuse and the second anti-fuse each including a first electrode electrically connected to a portion of the conductive line, and a second electrode over the first electrode with a first insulating layer therebetween, and electrically connected to a portion of the first dummy line, and a circuit portion overlapping, and electrically connected to, the pad portion.

    DISPLAY DEVICE
    19.
    发明申请

    公开(公告)号:US20210028272A1

    公开(公告)日:2021-01-28

    申请号:US16886876

    申请日:2020-05-29

    Abstract: A display device includes a substrate including a display area and a peripheral area outside the display area, a thin-film transistor arranged in the display area, a display element arranged in the display area, an interlayer insulating layer covering the thin-film transistor, a conductive layer arranged above the interlayer insulating layer, a first insulating layer covering the conductive layer, a pad arranged in the peripheral area, and a second conductive layer covering a central portion of the pad. The pad is connected to a connection line through a contact hole, and the connection line is arranged on a same first layer as a gate electrode of the thin-film transistor. A side surface of the pad is covered by the first insulating layer or the second conductive layer.

    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS
    20.
    发明申请
    THIN FILM TRANSISTOR SUBSTRATE AND DISPLAY APPARATUS 审中-公开
    薄膜晶体管基板和显示设备

    公开(公告)号:US20160079328A1

    公开(公告)日:2016-03-17

    申请号:US14615210

    申请日:2015-02-05

    Abstract: Provided is a thin film transistor substrate including a substrate; a source electrode and a drain electrode that are disposed on the substrate; an active layer that is formed on the source electrode and the drain electrode; a gate electrode that is formed on and is insulated from the active layer; and a pixel electrode that extends from one of the source electrode and the drain electrode.

    Abstract translation: 提供一种包括基板的薄膜晶体管基板; 源电极和漏电极,其设置在所述基板上; 形成在源电极和漏电极上的有源层; 形成在所述有源层上并与所述有源层绝缘的栅电极; 以及从源极电极和漏极电极之一延伸的像素电极。

Patent Agency Ranking