公开(公告)号：US20180205009A1

公开(公告)日：2018-07-19

申请号：US15445695

申请日：2017-02-28

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer ,  Dmytro Apalkov ,  Vladimir Nikitin ,  Don Koun Lee

IPC: H01L43/12 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  G11C11/16

CPC classification number: H01L43/12 ,  G11C11/161 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic junction usable in a magnetic device and a method for providing the magnetic junction are described. A first portion of a magnetoresistive stack corresponding to the magnetic junction is provided. Providing this portion of the magnetoresistive stack includes providing at least one layer for a free layer of the magnetic junction. A second portion of the magnetoresistive stack is provided after the step of providing the first portion of the magnetoresistive stack. The magnetoresistive stack is patterned to provide the magnetic junction after the step of providing the second portion of the magnetoresistive stack. An ambient temperature for the magnetoresistive stack and the magnetic junction does not exceed a crystallization temperature of the free layer after the step of providing the free layer through the step of patterning the magnetoresistive stack. The magnetic junction is annealed at an anneal temperature not less than the crystallization temperature after the step of patterning the magnetoresistive stack.

公开(公告)号：US20180096982A1

公开(公告)日：2018-04-05

申请号：US15354934

申请日：2016-11-17

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer

IPC: H01L27/02 ,  G11C11/16 ,  H01L27/22 ,  H01L45/00 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L27/0248 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  H01L27/224 ,  H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  H01L45/06 ,  H01L45/065 ,  H01L45/144

Abstract: A magnetic cell and method for providing the magnetic cell are described. A magnetic cell resides on a substrate and is usable in a magnetic device. The magnetic cell includes a magnetic junction and an ovonic threshold switch (OTS) layer. The magnetic junction has a plurality of sidewalls. The magnetic junction includes a free layer switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, a nonmagnetic spacer layer and a pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The OTS layer covers at least a portion of the plurality of sidewalls.

公开(公告)号：US20160196859A1

公开(公告)日：2016-07-07

申请号：US14973591

申请日：2015-12-17

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer

IPC: G11C11/16 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic memory and methods for providing and programming the magnetic memory are described. The memory includes storage cells, magnetic oscillator(s) and bit lines. Each storage cell includes magnetic junction(s) having a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a first magnetic anisotropy at room temperature and a second magnetic anisotropy at a minimum switching temperature due to at least the write current. The second magnetic anisotropy is not more than ninety percent of the first magnetic anisotropy. The first and second magnetic anisotropies correspond to first and second ferromagnetic resonance (FMR) frequencies. The magnetic oscillator(s) have a frequency range. The first FMR frequency is outside of the frequency range. The second FMR frequency is within the frequency range.

Abstract translation: 描述了用于提供和编程磁存储器的磁存储器和方法。 存储器包括存储单元，磁性振荡器和位线。 每个存储单元包括具有自由层，参考层和参考层与自由层之间的非磁性间隔层的磁结。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 由于至少写入电流，自由层在室温下具有第一磁各向异性和在最小开关温度下的第二磁各向异性。 第二磁各向异性不超过第一磁各向异性的百分之九十。 第一和第二磁各向异性对应于第一和第二铁磁共振（FMR）频率。 磁性振荡器具有频率范围。 第一个FMR频率在频率范围之外。 第二个FMR频率在频率范围内。

公开(公告)号：US10276555B2

公开(公告)日：2019-04-30

申请号：US15354934

申请日：2016-11-17

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer

IPC: H01L43/02 ,  H01L29/82 ,  H01L43/12 ,  G11C11/16 ,  H01L27/02 ,  H01L27/22 ,  H01L43/08 ,  H01L45/00

Abstract: A magnetic cell and method for providing the magnetic cell are described. A magnetic cell resides on a substrate and is usable in a magnetic device. The magnetic cell includes a magnetic junction and an ovonic threshold switch (OTS) layer. The magnetic junction has a plurality of sidewalls. The magnetic junction includes a free layer switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction, a nonmagnetic spacer layer and a pinned layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The OTS layer covers at least a portion of the plurality of sidewalls.

公开(公告)号：US09576633B2

公开(公告)日：2017-02-21

申请号：US14973591

申请日：2015-12-17

Applicant: Samsung Electronics Co., LTD.

Inventor： Sebastian Schafer

IPC: G11C11/00 ,  G11C11/14 ,  G11C11/15 ,  G11C11/16 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L27/226 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic memory and methods for providing and programming the magnetic memory are described. The memory includes storage cells, magnetic oscillator(s) and bit lines. Each storage cell includes magnetic junction(s) having a free layer, a reference layer, and a nonmagnetic spacer layer between reference and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic junction. The free layer has a first magnetic anisotropy at room temperature and a second magnetic anisotropy at a minimum switching temperature due to at least the write current. The second magnetic anisotropy is not more than ninety percent of the first magnetic anisotropy. The first and second magnetic anisotropies correspond to first and second ferromagnetic resonance (FMR) frequencies. The magnetic oscillator(s) have a frequency range. The first FMR frequency is outside of the frequency range. The second FMR frequency is within the frequency range.

Abstract translation: 描述了用于提供和编程磁存储器的磁存储器和方法。 存储器包括存储单元，磁性振荡器和位线。 每个存储单元包括具有自由层，参考层和参考层与自由层之间的非磁性间隔层的磁结。 当写入电流通过磁结时，自由层可在稳定的磁状态之间切换。 由于至少写入电流，自由层在室温下具有第一磁各向异性和在最小开关温度下的第二磁各向异性。 第二磁各向异性不超过第一磁各向异性的百分之九十。 第一和第二磁各向异性对应于第一和第二铁磁共振（FMR）频率。 磁性振荡器具有频率范围。 第一个FMR频率在频率范围之外。 第二个FMR频率在频率范围内。