公开(公告)号：US20220285643A1

公开(公告)日：2022-09-08

申请号：US17468146

申请日：2021-09-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wonjae JOO ,  Hyun KOO ,  Ajeong CHOI

IPC: H01L51/50 ,  H01L51/52

Abstract: A light-emitting device includes: a reflective layer; a first electrode provided on the reflective layer; a second electrode facing the first electrode; a first emission layer provided between the first electrode and the second electrode; a second emission layer provided between the first emission layer and the second electrode, and a first partial transmission mirror provided between the first emission layer and the second emission layer so that a first or higher order resonance mode is formed between the reflective layer and the first partial transmission mirror, and a second or higher order resonance mode is formed between the reflective layer and the second electrode.

公开(公告)号：US20220246707A1

公开(公告)日：2022-08-04

申请号：US17405728

申请日：2021-08-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ajeong CHOI ,  Hyun KOO ,  Wonjae JOO

IPC: H01L27/32 ,  H01L51/52

Abstract: Provided is an organic light-emitting element including a substrate, a thin film transistor provided on the substrate, a first insulating layer provided on the substrate and the thin film transistor, a reflective layer provided on the first insulating layer, the reflective layer being electrically connected to a first portion of the thin film transistor, a second insulating layer provided on the first insulating layer and the reflective layer, an anode provided on the second insulating layer, the anode being electrically connected to a second portion of the thin film transistor that is different from the first portion of the thin film transistor, an emission layer provided on the anode, and a cathode provided on the emission layer, wherein the reflective layer and the anode overlap each other with the second insulating layer interposed therebetween to form a storage capacitor.

公开(公告)号：US20180269413A1

公开(公告)日：2018-09-20

申请号：US15804279

申请日：2017-11-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ajeong CHOI ,  Youngjun Yun ,  Yong Uk Lee ,  Suk Gyu Hahm

IPC: H01L51/05 ,  H01L51/00 ,  H01L51/10

CPC classification number: H01L51/0558 ,  H01L51/0008 ,  H01L51/0074 ,  H01L51/0562 ,  H01L51/10 ,  H01L51/105

Abstract: A thin film transistor includes a pair of auxiliary structures facing each other on a substrate, an active layer including an organic semiconductor and continuously grown between the pair of auxiliary structures, a gate electrode on the substrate and overlapped by the active layer, and a source electrode and a drain electrode electrically connected to the active layer. A method of manufacturing the thin film transistor is disclosed.

公开(公告)号：US20170098792A1

公开(公告)日：2017-04-06

申请号：US15131165

申请日：2016-04-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Young Kim ,  Jiyoung JUNG ,  Jeong II PARK ,  Woo Young YANG ,  Youngjun YUN ,  Eun Kyung LEE ,  Ajeong CHOI

IPC: H01L51/05 ,  H01L51/00

CPC classification number: H01L51/0533 ,  H01L51/0003 ,  H01L51/0005 ,  H01L51/0011 ,  H01L51/0074

Abstract: A thin film transistor includes a gate electrode, a semiconductor overlapping the gate electrode, a gate insulator between the gate electrode and the semiconductor, and a source electrode and a drain electrode electrically connected to the semiconductor, wherein the gate insulator includes an inorganic insulation layer facing the gate electrode and an organic insulation layer facing the semiconductor. A method of manufacturing the thin film transistor and an electronic device including the thin film transistor are provided.

公开(公告)号：US20170058061A1

公开(公告)日：2017-03-02

申请号：US15239424

申请日：2016-08-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Kyung LEE ,  Jiyoung JUNG ,  Jeong II PARK ,  Ajeong CHOI

IPC: C08F130/08 ,  H01L51/05 ,  H01G4/14 ,  H01L51/00

CPC classification number: C08F130/08 ,  C08G77/14 ,  C08G77/20 ,  C08G77/442 ,  C08G83/001 ,  C09D183/10 ,  H01B3/46 ,  H01G4/14 ,  H01L51/004 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0537

Abstract: A composition includes a product of a condensation reaction between a thermal cross-linking agent and a product of hydrolysis and condensation polymerization of a compound represented by Chemical Formula 1: In Chemical Formula 1, the definitions of the substituents are the same as in the detailed description. Further, an electronic device and a thin film transistor include a cured material of the composition.

Abstract translation: 在化学式1中，取代基的定义与详细描述相同。 此外，电子器件和薄膜晶体管包括组合物的固化材料。

公开(公告)号：US20160079535A1

公开(公告)日：2016-03-17

申请号：US14721474

申请日：2015-05-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Young JUNG ,  Eun Kyung LEE ,  Ajeong CHOI

IPC: H01L51/00 ,  H01L51/05

CPC classification number: H01L51/0533 ,  H01L51/0053

Abstract: A composition includes a compound including a structural unit represented by the above Chemical Formula 1, and a structural unit represented by the above Chemical Formula 2 on at least one terminal end.

Abstract translation: 组合物包括在至少一个末端的包含由上述化学式1表示的结构单元的化合物和由上述化学式2表示的结构单元。