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    DISHWASHER
    11.
    发明申请
    DISHWASHER 有权

    公开(公告)号：US20220330787A1

    公开(公告)日：2022-10-20

    申请号：US17681566

    申请日：2022-02-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Johannes BÜSING ,  Jongwook KWON ,  Sojeong KIM ,  Changhyun KIM ,  Hyunjoo KIM ,  Woojin SHIN

    IPC: A47L15/42 ,  A47L15/48

    Abstract: Disclosed herein is a dishwasher. The dishwasher includes, a tub provided in the cabinet to form a washing chamber, and a drying apparatus arranged on a side wall of the tub and including a flow path provided to allow air sucked from the washing chamber to flow, a heater arranged in the flow path to heat air in the flow path, and a switch arranged upstream of the heater to turn off the heater in response to air, which is adjacent to the heater, reaching a predetermined temperature.

    METHOD OF FORMING GRAPHENE
    12.
    发明申请
    METHOD OF FORMING GRAPHENE 有权

    公开(公告)号：US20210163296A1

    公开(公告)日：2021-06-03

    申请号：US17060893

    申请日：2020-10-01

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Van Luan NGUYEN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Changhyun KIM ,  Changseok LEE ,  Yeonchoo CHO

    IPC: C01B32/186

    Abstract: A method of forming graphene includes: preparing a substrate in a reaction chamber; performing a first growth process of growing a plurality of graphene aggregates apart from each other on the substrate at a first growth rate by using a reaction gas including a carbon source; and performing a second growth process of forming a graphene layer by growing the plurality of graphene aggregates at a second growth rate slower than the first growth rate by using the reaction gas including the carbon source.

    DISHWASHER
    17.
    发明公开
    DISHWASHER 审中-公开

    公开(公告)号：US20230180993A1

    公开(公告)日：2023-06-15

    申请号：US18076708

    申请日：2022-12-07

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Johannes BÜSING ,  Jongwook KWON ,  Kyuha LEE ,  Changhyun KIM ,  Sungsan KIM ,  Joowan NAM ,  Woojin SHIN

    IPC: A47L15/48 ,  A47L15/42 ,  A47L15/50

    CPC classification number: A47L15/486 ,  A47L15/4287 ,  A47L15/507

    Abstract: A dishwasher includes: a tub including a washing room; and a dryer installed on one side of the tub, the dryer including: a first housing coupled with the tub and communicating with the washing room; a second housing coupled with an other side of the first housing, and forming a flow path together with the first housing so that inside air of the washing room circulates back to the washing room by passing through the flow path; a heater accommodated inside the first housing and the second housing to heat the air passing through the flow path; and a switch module positioned upstream of the heater, configured to detect an inside temperature of the flow path to turn on or off the heater based on the detected inside temperature, and fixed between the first housing and the second housing by coupling of the first housing with the second housing.

    METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM
    18.
    发明申请
    METHOD OF FORMING TRANSITION METAL DICHALCOGENIDE THIN FILM 有权

    公开(公告)号：US20230114347A1

    公开(公告)日：2023-04-13

    申请号：US18063909

    申请日：2022-12-09

    Applicant: Samsung Electronics Co., Ltd. ,  RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY

    Inventor： Changhyun KIM ,  Sang-Woo Kim ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Ahrum SOHN ,  Jaehwan JUNG

    IPC: H01L21/02

    Abstract: Disclosed herein are a method of forming a transition metal dichalcogenide thin film and a method of manufacturing a device including the same. The method of forming a transition metal dichalcogenide thin film includes: providing a substrate in a reaction chamber; depositing a transition metal dichalcogenide thin film on the substrate using a sputtering process that uses a transition metal precursor and a chalcogen precursor and is performed at a first temperature; and injecting the chalcogen precursor in a gas state and heat-treating the transition metal dichalcogenide thin film at a second temperature that is higher than the first temperature. The substrate may include a sapphire substrate, a silicon oxide (SiO2) substrate, a nanocrystalline graphene substrate, or a molybdenum disulfide (MoS2) substrate.

    MODULE REFRIGERATOR
    19.
    发明申请
    MODULE REFRIGERATOR 有权

    公开(公告)号：US20230038735A1

    公开(公告)日：2023-02-09

    申请号：US17970947

    申请日：2022-10-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jisook LEE ,  Changhyun KIM ,  Hyunjoo KIM ,  Hosang PARK ,  Eungryeol SEO ,  Wonjae YOON

    IPC: F25D17/08 ,  F25D23/06

    Abstract: A modular refrigerator including a main cabinet, and a sub-cabinet selectively coupleable to a right side, an upper side, and a left side, of the main cabinet. The main cabinet includes a cooling unit, a first connection duct for cold air generated by the cooling unit to flow toward the right side, a second connection duct for the cold air to flow toward the upper side, and a third connection duct for the cold air to flow toward the left side. The sub-cabinet includes a first branch duct that, when the sub-cabinet is coupled to the right side, communicates with the first connection duct, a second branch duct that, when the sub-cabinet is coupled to the upper side, communicates with the second connection duct, and a third branch duct that, when the sub-cabinet is coupled to the left side, communicates with third connection duct.

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