公开(公告)号：US20210159242A1

公开(公告)日：2021-05-27

申请号：US16903514

申请日：2020-06-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiseok JANG ,  Chang-Sun HWANG ,  Chungki MIN ,  Kieun SEO ,  Jongheun LIM

IPC: H01L27/11573 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11582 ,  H01L23/535 ,  H01L21/768

Abstract: A three-dimensional semiconductor memory device including a peripheral circuit structure on a first substrate, the peripheral circuit structure including peripheral circuits, a second substrate on the peripheral circuit structure, an electrode structure on the second substrate, the electrode structure including a plurality of electrodes that are stacked on the second substrate and a penetrating interconnection structure penetrating the electrode structure and the second substrate may be provided. The penetrating interconnection structure may include a lower insulating pattern, a mold pattern structure on the lower insulating pattern, a protection pattern between the lower insulating pattern and the mold pattern structure, and a penetration plug. The penetration plug may penetrate the mold pattern structure and the lower insulating pattern and may be connected to the peripheral circuit structure. The protection pattern may be at a level lower than that of the lowermost one of the electrodes.

公开(公告)号：US20200075398A1

公开(公告)日：2020-03-05

申请号：US16377516

申请日：2019-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Miso SHIN ,  Chungki MIN ,  Gihwan KIM ,  Sanghyeok KIM ,  Hyo-Jung KIM ,  Geunwon LIM

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/324 ,  H01L27/11582 ,  H01L27/11573

Abstract: A device including a gap-fill layer may include an upper layer that on a lower layer that defines a trench that extends from a top surface of the upper layer and towards the lower layer, and the gap filling layer may be a multi-layered structure filling the trench. The gap-filling layer may include a first dielectric layer that fills a first portion of the trench and has a top surface proximate to the top surface of the upper layer, a second dielectric layer that fills a second portion of the trench and has a top surface proximate to the top surface of the upper layer and more recessed toward the lower layer than the top surface of the first dielectric layer, and a third dielectric layer that fills a remaining portion of the trench and covers the top surface of the second dielectric layer.