公开(公告)号：US20170134663A1

公开(公告)日：2017-05-11

申请号：US15343767

申请日：2016-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Young-Tae JIN ,  So-Yeon KIM ,  Hyo-Jung KIM ,  Dae-Woong SONG ,  Soo-Jung LEE ,  Eo-Jin LIM ,  Seong-Yeon HWANG

IPC: H04N5/232 ,  G06T11/00 ,  H04N1/00 ,  G06T11/60

CPC classification number: H04N5/23293 ,  G06T11/001 ,  G06T11/60 ,  H04N1/00411 ,  H04N1/00453 ,  H04N2201/0084 ,  H04N2201/0096 ,  H04N2201/0098

Abstract: An electronic device is provided. The electronic device includes a storage configured to store information about a plurality of color assignment areas included in an image editing tool displayed on a screen of the electronic device, a display configured to display the image editing tool including the plurality of color assignment areas on the screen of the electronic device, and a controller configured to run a preset application installed in the electronic device in response to an input related to color extraction, and display a color selected in at least one area of an execution screen of the application in the color assignment areas of the image editing tool.

公开(公告)号：US20240145254A1

公开(公告)日：2024-05-02

申请号：US18328298

申请日：2023-06-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo-Jung KIM ,  Dong Hoon KWON

IPC: H01L21/321 ,  H01L21/02 ,  H01L21/304 ,  H01L21/67

CPC classification number: H01L21/3212 ,  H01L21/02024 ,  H01L21/3043 ,  H01L21/67219

Abstract: A chemical mechanical polishing apparatus capable of controlling polishing temperature, and a method of fabricating a semiconductor device using the same are provided. The chemical mechanical polishing apparatus includes a platen, a polishing pad on the platen, the polishing pad including a plurality of grooves, and a light irradiator in the platen, the light irradiator configured to irradiate light toward the polishing pad, wherein the polishing pad includes a light transmission pattern interposed between at least some of the plurality of grooves and the light irradiator and through which the light is transmitted.

公开(公告)号：US20220139766A1

公开(公告)日：2022-05-05

申请号：US17578785

申请日：2022-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Miso SHIN ,  Chungki MIN ,  Gihwan KIM ,  Sanghyeok KIM ,  Hyo-Jung KIM ,  Geunwon LIM

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/3105 ,  H01L27/11573 ,  H01L21/324 ,  H01L27/11582 ,  H01L21/311

Abstract: A device including a gap-fill layer may include an upper layer that on a lower layer that defines a trench that extends from a top surface of the upper layer and towards the lower layer, and the gap filling layer may be a multi-layered structure filling the trench. The gap-filling layer may include a first dielectric layer that fills a first portion of the trench and has a top surface proximate to the top surface of the upper layer, a second dielectric layer that fills a second portion of the trench and has a top surface proximate to the top surface of the upper layer and more recessed toward the lower layer than the top surface of the first dielectric layer, and a third dielectric layer that fills a remaining portion of the trench and covers the top surface of the second dielectric layer.

公开(公告)号：US20200075398A1

公开(公告)日：2020-03-05

申请号：US16377516

申请日：2019-04-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Miso SHIN ,  Chungki MIN ,  Gihwan KIM ,  Sanghyeok KIM ,  Hyo-Jung KIM ,  Geunwon LIM

IPC: H01L21/762 ,  H01L21/768 ,  H01L21/3105 ,  H01L21/311 ,  H01L21/324 ,  H01L27/11582 ,  H01L27/11573

Abstract: A device including a gap-fill layer may include an upper layer that on a lower layer that defines a trench that extends from a top surface of the upper layer and towards the lower layer, and the gap filling layer may be a multi-layered structure filling the trench. The gap-filling layer may include a first dielectric layer that fills a first portion of the trench and has a top surface proximate to the top surface of the upper layer, a second dielectric layer that fills a second portion of the trench and has a top surface proximate to the top surface of the upper layer and more recessed toward the lower layer than the top surface of the first dielectric layer, and a third dielectric layer that fills a remaining portion of the trench and covers the top surface of the second dielectric layer.