公开(公告)号：US10319590B2

公开(公告)日：2019-06-11

申请号：US15294818

申请日：2016-10-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cha-won Ko ,  Hyun-woo Kim ,  Youn-joung Cho ,  Jin-kyu Han

IPC: H01L21/033 ,  H01L21/02 ,  H01L21/027

Abstract: A method of forming a semiconductor device includes forming an etching layer on a substrate, forming a photoresist layer on the etching layer, forming an exposed area configured to define an unexposed area in the photoresist layer, forming a hardmask layer on the exposed area using a selective deposition process, partially removing the photoresist layer using the hardmask layer as an etch mask and forming a photoresist pattern, and etching the etching layer using the photoresist pattern as an etch mask and forming a fine pattern.

公开(公告)号：US10688437B2

公开(公告)日：2020-06-23

申请号：US16122454

申请日：2018-09-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Cha-won Koh ,  Oleg Feygenson ,  Jung-hyeon Kim ,  Hyun-woo Kim ,  Eun-sung Kim

IPC: B01D61/42 ,  G03F7/26 ,  B01D63/06 ,  B01D61/46 ,  G03F7/16 ,  H01L21/027 ,  B01D29/58 ,  B01D29/15

Abstract: A filter structure for chemical solution used in manufacturing an integrated circuit includes: a first membrane structure comprising a plurality of membrane units, each comprising a cathode comprising a plurality of first openings, an anode comprising a plurality of second openings, and an insulating layer between the cathode and the anode; and a filter housing configured to receive the first membrane structure therein, the filter housing comprising an inlet through which the chemical solution is introduced and an outlet through which the chemical solution is discharged. The first membrane structure is configured such that when an electric field is applied between the cathode and the anode while the chemical solution introduced through the inlet passes through the first membrane structure, impurities having both positively charged particles and negatively charged particles in the chemical solution are trapped in the first membrane structure.

公开(公告)号：US20190040171A1

公开(公告)日：2019-02-07

申请号：US16156264

申请日：2018-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Park ,  Hyun-woo Kim

IPC: C08F214/14 ,  G03F7/34 ,  G03F7/039 ,  G03F7/16 ,  G03F7/038 ,  C08G75/26 ,  C08F214/18 ,  C08F214/16 ,  G03F7/20 ,  G03F7/36

Abstract: A photoresist polymer is synthesized from a repeating unit that comprises a first leaving group including an ester group, and a second leaving group capable of being removed together with the first leaving group.

公开(公告)号：US10096476B2

公开(公告)日：2018-10-09

申请号：US15682852

申请日：2017-08-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin Park ,  Hyun-woo Kim ,  Myeong-koo Kim

IPC: H01L21/311 ,  H01L21/033 ,  H01L21/027 ,  G03F7/11 ,  C09D179/08

Abstract: A composition for manufacturing a semiconductor device includes at least one carbon-based compound that includes at least one of an alkyne group and an azide group, and a solvent. A method of manufacturing a semiconductor device includes forming a feature layer on a substrate, coating the feature layer with a composition including alkyne and azide, forming a carbon-containing layer including a triazole compound by performing a heat treatment on the coated composition, forming a photoresist film on the carbon-containing layer, forming photoresist patterns by exposing and developing the photoresist film, and patterning the carbon-containing layer and the feature layer using the photoresist patterns.