公开(公告)号：US20210143156A1

公开(公告)日：2021-05-13

申请号：US16916366

申请日：2020-06-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunji SONG ,  Jaehoon KIM ,  Kwangho PARK ,  Yonghoon SON ,  Gyeonghee LEE ,  Seungjae JUNG

IPC: H01L27/108

Abstract: An integrated circuit device includes a plurality of semiconductor layers stacked on a substrate to overlap each other in a vertical direction and longitudinally extending along a first horizontal direction. The plurality of semiconductor layers may have different thicknesses in the vertical direction.

公开(公告)号：US20220254783A1

公开(公告)日：2022-08-11

申请号：US17731611

申请日：2022-04-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hoon KIM ,  Kwang-Ho PARK ,  Yong-Hoon SON ,  Hyunji SONG ,  Gyeonghee LEE ,  Seungjae JUNG

IPC: H01L27/108 ,  G11C11/4097

Abstract: A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.

公开(公告)号：US20210263411A1

公开(公告)日：2021-08-26

申请号：US16991281

申请日：2020-08-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yechan KIM ,  Su Min KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Juhyeon PARK ,  Hyunji SONG ,  Songse YI ,  Suk Koo HONG

IPC: G03F7/004 ,  C08L25/06 ,  C07C381/12 ,  C08L35/00

Abstract: A resist composition including a polymer; and a compound represented by Formula 1, in Formula 1, R1 is hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, a carbonyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, an ether group having 1 to 7 carbon atoms, or a group represented by Formula R, and R2, R3, R4 and R5 are hydrogen, a halogen, an alkyl group having 1 to 7 carbon atoms, an ester group having 1 to 7 carbon atoms, an acetal group having 1 to 7 carbon atoms, an alkoxy group having 1 to 7 carbon atoms, or an ether group having 1 to 7 carbon atoms,

公开(公告)号：US20210240079A1

公开(公告)日：2021-08-05

申请号：US17003373

申请日：2020-08-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Juhyeon PARK ,  Su Min KIM ,  Yechan KIM ,  Ju-Young KIM ,  Jinjoo KIM ,  Hyunwoo KIM ,  Hyunji SONG ,  Songse YI ,  Suk Koo HONG

IPC: G03F7/038 ,  G03F7/004 ,  G03F7/38 ,  H01L21/027 ,  H01L21/3213 ,  G03F7/20

Abstract: A photolithography method and a method of manufacturing a semiconductor device, the photolithography method including applying a composition on a substrate to form a photoresist layer; performing an exposing process using extreme ultraviolet radiation (EUV) on the photoresist layer; and developing the photoresist layer to form photoresist patterns, wherein the composition includes a photosensitive resin, a photo-acid generator, a photo decomposable quencher, an additive, and a solvent, and the additive is a compound represented by the following Formula 4A: in Formula 4A, R1 to R5 are each independently hydrogen or iodine, at least one of R1 to R5 being iodine.