公开(公告)号：US20240274689A1

公开(公告)日：2024-08-15

申请号：US18436512

申请日：2024-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Injun HWANG ,  Jaejoon OH ,  Boram KIM ,  Sunkyu HWANG

IPC: H01L29/47 ,  H01L27/095 ,  H01L29/20 ,  H01L29/778

CPC classification number: H01L29/475 ,  H01L27/095 ,  H01L29/2003 ,  H01L29/7786

Abstract: A HEMT may include a channel layer including a 2DEG as a channel carrier, first and second electrodes separated on the channel layer, a first semiconductor layer on the channel layer between the first and second electrodes and having a greater band gap greater than the channel layer, a gate stack on the first semiconductor layer, and a gate electrode in ohmic contact with the gate stack. The gate stack may include a lower layer contacting the first semiconductor layer, a second semiconductor layer providing a Schottky barrier on the lower layer, and an upper layer on the second semiconductor layer. The upper layer may be doped with a p-type dopant and may have a lower band gap than the second semiconductor layer.

公开(公告)号：US20240096944A1

公开(公告)日：2024-03-21

申请号：US18133276

申请日：2023-04-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Joonyong KIM ,  Sunkyu HWANG ,  Boram KIM ,  Jongseob KIM ,  Junhyuk PARK ,  Jaejoon OH ,  Injun HWANG

IPC: H01L29/06 ,  H01L21/3065 ,  H01L23/473 ,  H01L29/66 ,  H10N39/00

CPC classification number: H01L29/0657 ,  H01L21/3065 ,  H01L23/473 ,  H01L29/66462 ,  H10N39/00 ,  H01L29/7786

Abstract: Provided are a power device and a manufacturing method thereof. A power device includes a compound semiconductor layer epitaxially grown on a substrate, a gate formed on the compound semiconductor layer, a source and a drain provided on either side of the gate, a passivation layer provided to cover the source, drain, and gate, and a cooling space region provided to form a cooling path inside the substrate. The cooling space region may be formed to a predetermined depth from the surface of the substrate and include an enlargement region having a width increasing according to a depth from the surface of the substrate. The width of an inlet of the cooling space region is less than a maximum width of the enlargement region, and the passivation layer and the compound semiconductor layer are provided to open the cooling space region.

公开(公告)号：US20210399120A1

公开(公告)日：2021-12-23

申请号：US17098896

申请日：2020-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sunkyu HWANG ,  Joonyong KIM ,  Jongseob KIM ,  Junhyuk PARK ,  Boram KIM ,  Younghwan PARK ,  Dongchul SHIN ,  Jaejoon OH ,  Soogine CHONG ,  Injun HWANG

IPC: H01L29/778 ,  H01L29/66

Abstract: Provided is a high electron mobility transistor including: a channel layer comprising a 2-dimensional electron gas (2DEG); a barrier layer on the channel layer and comprising first regions and a second region, the first regions configured to induce the 2DEG of a first density in portions of the channel layer and the second region configured to induce the 2DEG of a second density different from the first density in other portions of the channel layer; source and drain electrodes on the barrier layer; a depletion formation layer formed on the barrier layer between the source and drain electrodes to form a depletion region in the 2DEG; and a gate electrode on the barrier layer. The first regions may include a first edge region and a second edge region corresponding to both ends of a surface of the gate electrode facing the channel layer.

公开(公告)号：US20210118814A1

公开(公告)日：2021-04-22

申请号：US16868745

申请日：2020-05-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Younghwan PARK ,  Jongseob KIM ,  Joonyong KIM ,  Junhyuk PARK ,  Dongchul SHIN ,  Jaejoon OH ,  Soogine CHONG ,  Sunkyu HWANG ,  Injun HWANG

IPC: H01L23/00 ,  H01L29/20 ,  H01L29/205 ,  H01L29/778 ,  H01L29/15

Abstract: A semiconductor thin film structure may include a substrate, a buffer layer on the substrate, and a semiconductor layer on the buffer layer, such that the buffer layer is between the semiconductor layer and the substrate. The buffer layer may include a plurality of unit layers. Each unit layer of the plurality of unit layers may include a first layer having first bandgap energy and a first thickness, a second layer having second bandgap energy and a second thickness, and a third layer having third bandgap energy and a third thickness. One layer having a lowest bandgap energy of the first, second, and third layers of the unit layer may be between another two layers of the first, second, and third layers of the unit layer.