公开(公告)号：US20130137240A1

公开(公告)日：2013-05-30

申请号：US13679345

申请日：2012-11-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kevin Ahn ,  Bo-Un Yoon ,  Jeong-Nam Han

IPC: H01L21/762

CPC classification number: H01L21/76229 ,  H01L21/0206 ,  H01L21/02065 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/30621 ,  H01L21/31055 ,  H01L21/31056 ,  H01L21/31111 ,  H01L21/31116 ,  H01L21/76205 ,  H01L21/823468 ,  H01L21/823481 ,  H01L29/66545

Abstract: Provided are methods for fabricating a semiconductor device. The methods include forming a hard mask pattern on a semiconductor substrate, forming a first trench having a first width and a second trench having a second width on the semiconductor substrate using the hard mask pattern as a mask, forming an oxide film on the hard mask pattern and the first and second trenches, forming first and second isolation films on the first and second trenches by planarizing the oxide film until the hard mask pattern is exposed, and etching the first isolation film by a first thickness by performing dry cleaning on the semiconductor substrate and etching the second isolation film by a second thickness different from the first thickness.

Abstract translation: 提供了制造半导体器件的方法。 所述方法包括在半导体衬底上形成硬掩模图案，使用硬掩模图案作为掩模，在半导体衬底上形成具有第一宽度的第一沟槽和具有第二宽度的第二沟槽，在硬掩模上形成氧化物膜 图案和第一沟槽和第二沟槽，通过平坦化氧化膜直到硬掩模图案露出来在第一和第二沟槽上形成第一和第二隔离膜，并且通过对半导体进行干洗来蚀刻第一隔离膜第一厚度第一厚度 衬底并用不同于第一厚度的第二厚度蚀刻第二隔离膜。