公开(公告)号：US20230374378A1

公开(公告)日：2023-11-23

申请号：US18224167

申请日：2023-07-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Yong Wook KIM

IPC: C09K11/88 ,  C01G9/00 ,  C01G15/00 ,  C09K11/56 ,  C09K11/62 ,  C09K11/70 ,  C09K11/02

CPC classification number: C09K11/883 ,  C01G9/006 ,  C01G15/00 ,  C09K11/565 ,  C09K11/621 ,  C09K11/703 ,  C09K11/025 ,  B82Y20/00

Abstract: A quantum dot, a quantum dot-polymer composite, and an electronic device including the same. The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.

公开(公告)号：US20230235220A1

公开(公告)日：2023-07-27

申请号：US18159871

申请日：2023-01-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Yong Seok HAN ,  Ilyoung LEE ,  Oul CHO

IPC: C09K11/70 ,  H10K50/115

CPC classification number: C09K11/70 ,  H10K50/115

Abstract: An electroluminescent device including a first electrode, a second electrode, and a light-emitting layer disposed between the first electrode and the second electrode, the light-emitting layer including a plurality of semiconductor nanoparticles, wherein the light-emitting layer is configured to emit green light, wherein the plurality of semiconductor nanoparticles include a first semiconductor nanocrystal including indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal including a zinc chalcogenide, wherein the zinc chalcogenide includes zinc, selenium, and sulfur, wherein in the plurality of the semiconductor nanoparticles, a mole ratio of zinc to indium is greater than or equal to about 60:1, and



wherein the electroluminescent device is configured to exhibit a T90 of greater than or equal to about 120 hours as measured with an initial driving luminance of about 2700 nit.

公开(公告)号：US20230086635A1

公开(公告)日：2023-03-23

申请号：US18059075

申请日：2022-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam PARK ,  Eun Joo JANG ,  Yongwook KIM ,  Jihyun MIN ,  Hyo Sook JANG ,  Shin Ae JUN ,  Taekhoon KIM ,  Yuho WON

IPC: C09K11/88 ,  C09K11/70

Abstract: A semiconductor nanocrystal particle including: a core including a first semiconductor material; and a shell disposed on the core, wherein the shell includes a second semiconductor material, wherein the shell is free of cadmium, wherein the shell has at least two branches and at least one valley portion connecting the at least two branches, and wherein the first semiconductor material is different from the second semiconductor material.

公开(公告)号：US20220246876A1

公开(公告)日：2022-08-04

申请号：US17727940

申请日：2022-04-25

Applicant: Samsung Electronics Co., Ltd. ,  The Governing Council of the University of Toronto

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Edward H. SARGENT ,  Hyo Sook JANG ,  Makhsud I. SAIDAMINOV ,  Sjoerd HOOGLAND ,  Ankit JAIN ,  Andrew JOHNSTON ,  Oleksandr VOZNYY

IPC: H01L51/50 ,  H01L51/00

Abstract: A semiconductor nanocrystal particle represented by Chemical Formula 1 and having a full width at half maximum (FWHM) of less than or equal to about 30 nanometers (nm) in the emission wavelength spectrum is provided: AxA′(3+α−x)D(2+β)E(9+γ).   Chemical Formula 1 In Chemical Formula 1, A is a first metal including Rb, Cs, or a combination thereof, A′ is an organic substance derived from an ammonium salt, an organic material derived from an organic ligand, or an organic material including a combination thereof, D is a second metal including Sb, Bi, or a combination thereof E is Cl, Br, I, or a combination thereof, 1 0, −1

公开(公告)号：US20220017818A1

公开(公告)日：2022-01-20

申请号：US17490552

申请日：2021-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho WON ,  Nayoun WON ,  Sungwoo HWANG ,  Eun Joo JANG ,  Soo Kyung KWON ,  Yong Wook KIM ,  Jihyun MIN ,  Garam PARK ,  Shang Hyeun PARK ,  Hyo Sook JANG ,  Shin Ae JUN ,  Yong Seok HAN

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/13357 ,  H01L51/50 ,  H01L27/32 ,  C09K11/02 ,  C09K11/56 ,  C09K11/70 ,  C09K11/88 ,  H05B33/14

Abstract: A cadmium free quantum dot not including cadmium and including: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, a composition and composite including the same, and an electronic device.

公开(公告)号：US20210115332A1

公开(公告)日：2021-04-22

申请号：US17072335

申请日：2020-10-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong KIM ,  Soo Kyung KWON ,  Yong Wook KIM ,  Ji-Yeong KIM ,  Jihyun MIN ,  Sungwoo HWANG ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/54 ,  C09K11/56 ,  C09K11/06 ,  C01G9/00 ,  C01G9/08 ,  H01L27/32 ,  G02F1/13357

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US20230287269A1

公开(公告)日：2023-09-14

申请号：US18318053

申请日：2023-05-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seon-Yeong KIM ,  Soo Kyung KWON ,  Yong Wook KIM ,  Ji-Yeong KIM ,  Jihyun MIN ,  Sungwoo HWANG ,  Eun Joo JANG

IPC: C09K11/88 ,  C09K11/54 ,  C09K11/56 ,  C09K11/06 ,  C01G9/00 ,  C01G9/08 ,  G02F1/13357 ,  H10K59/38

CPC classification number: C09K11/883 ,  C09K11/54 ,  C09K11/565 ,  C09K11/06 ,  C01G9/006 ,  C01G9/08 ,  G02F1/133621 ,  H10K59/38 ,  G02F2202/36 ,  C01P2006/60 ,  C01P2004/90 ,  C01P2004/64 ,  G02B6/005

Abstract: A core-shell quantum dot including a core including a first semiconductor nanocrystal, the first semiconductor nanocrystal including zinc, tellurium, and selenium and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc and selenium, sulfur, or a combination thereof and a production thereof are disclosed, wherein the core-shell quantum dot does not include cadmium, lead, mercury, or a combination thereof, wherein the core-shell quantum dot(s) includes chlorine, wherein in the core-shell quantum dot, a mole ratio of chlorine with respect to tellurium is greater than or equal to about 0.01:1 and wherein a quantum efficiency of the core-shell quantum dot is greater than or equal to about 10%.

公开(公告)号：US20220209152A1

公开(公告)日：2022-06-30

申请号：US17563143

申请日：2021-12-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yong Seok HAN ,  Eun Joo JANG ,  Hyo Sook JANG ,  Oul CHO ,  Jihyun MIN ,  Yuho WON

IPC: H01L51/50 ,  C09K11/88 ,  C09K11/70

Abstract: A light-emitting device including a first electrically conducting layer, a second electrically conducting layer, and a light-emitting layer disposed between the first electrically conducting layer and the second electrically conducting layer, the light emitting layer including light emitting nanostructures, wherein the light emitting layer is configured to emit green light, the light-emitting layer do not include cadmium, lead, or a combination thereof, the light emitting nanostructures include a first semiconductor nanocrystal including a Group III-V compound and a second semiconductor nanocrystal including a zinc chalcogenide, the Group III-V compound includes indium, phosphorus, and optionally zinc, the zinc chalcogenide includes zinc, selenium, and sulfur, the light emitting nanostructures exhibit a zinc blende structure, and in a two dimensional image of the light emitting nanostructures obtained by an electron microscopy analysis, an average value of squareness of the light emitting nanostructures is greater than or equal to about 0.8.

公开(公告)号：US20220056338A1

公开(公告)日：2022-02-24

申请号：US17407260

申请日：2021-08-20

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  POSTECH Research and Business Development Foundation

Inventor： Yong Wook KIM ,  Yong ju KWON ,  Sungjee KIM ,  Jihyun MIN ,  Yuho WON ,  Eun Joo JANG ,  Hyo Sook JANG ,  Eunjae LEE ,  Kyuhyun BANG ,  Anastasia AGNES ,  Jeongmin KIM

IPC: C09K11/72 ,  C09K11/70 ,  C09K11/08 ,  C01B25/08

Abstract: The invention relates to InP-based nanoclusters that include indium and phosphorus and further include zinc, chlorine, or a combination thereof, and to a method of preparing the InP-based nanoparticles including heating the InP-based nanoclusters in the presence of zinc, chlorine, or a combination thereof.

公开(公告)号：US20220025256A1

公开(公告)日：2022-01-27

申请号：US17383814

申请日：2021-07-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun MIN ,  Eun Joo JANG ,  Yong Wook KIM

IPC: C09K11/06 ,  C01G9/00 ,  C01G15/00 ,  C09K11/70 ,  C09K11/62 ,  C09K11/56 ,  H01L51/00

Abstract: A quantum dot, a quantum dot-polymer composite, and an electronic device including the same The quantum dot includes a core including a first semiconductor nanocrystal; a first shell including a second semiconductor nanocrystal including a Group III-VI compound on the core; and a second shell including a third semiconductor nanocrystal having a composition different from that of the second semiconductor nanocrystal on the first shell; wherein one of the first semiconductor nanocrystal and the third semiconductor nanocrystal includes a Group III-V compound.