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公开(公告)号:US10714438B2
公开(公告)日:2020-07-14
申请号:US16151724
申请日:2018-10-04
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jinchan Ahn , Won-young Kim , Chanho Lee
IPC: H01L23/00 , H01L23/522
Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a metal line layer on a semiconductor substrate, and a metal terminal on the metal line layer. The metal line layer includes metal lines, and a passivation layer having a non-planarized top surface including flat surfaces on the metal lines and a concave surface between the metal lines. The metal terminal is provided on the passivation layer. Opposite lateral surfaces of the metal terminal facing each other are provided on the flat surfaces of the passivation layer.
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公开(公告)号:US10002822B2
公开(公告)日:2018-06-19
申请号:US15089604
申请日:2016-04-04
Applicant: Samsung Electronics Co., Ltd.
Inventor: MuSeob Shin , Won-young Kim , Sanghyun Park , Jinchan Ahn
IPC: H01L23/498 , H01L23/31 , H01L23/48 , H01L23/00 , H01L25/065
CPC classification number: H01L23/49838 , H01L23/3128 , H01L23/481 , H01L23/49816 , H01L23/49827 , H01L23/562 , H01L24/13 , H01L24/16 , H01L24/32 , H01L24/73 , H01L24/81 , H01L24/92 , H01L25/0655 , H01L25/0657 , H01L2224/13025 , H01L2224/131 , H01L2224/13147 , H01L2224/16145 , H01L2224/16227 , H01L2224/32225 , H01L2224/73204 , H01L2224/81192 , H01L2224/81815 , H01L2224/92125 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541 , H01L2924/15311 , H01L2924/3511 , H01L2924/014 , H01L2924/00014
Abstract: A circuit board and a semiconductor packages therewith are disclosed. The circuit board may include a top surface, on which at least one semiconductor chip is mounted, and a bottom surface, to which at least one outer terminal is coupled. The top surface may include an upper window region, on which an upper conductive pattern electrically connected to the semiconductor chip is provided, and the bottom surface may include a lower window region, on which a lower conductive pattern electrically connected to the upper conductive pattern is provided. Here, a ratio of an area of the lower conductive pattern to an area of the upper conductive pattern may be less than or equal to 1.5.
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