Semiconductor device having metal bump and method of manufacturing the same

    公开(公告)号:US10714438B2

    公开(公告)日:2020-07-14

    申请号:US16151724

    申请日:2018-10-04

    Abstract: Provided are a semiconductor device and a method of manufacturing the same. The semiconductor device includes a metal line layer on a semiconductor substrate, and a metal terminal on the metal line layer. The metal line layer includes metal lines, and a passivation layer having a non-planarized top surface including flat surfaces on the metal lines and a concave surface between the metal lines. The metal terminal is provided on the passivation layer. Opposite lateral surfaces of the metal terminal facing each other are provided on the flat surfaces of the passivation layer.

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