公开(公告)号：US11894122B2

公开(公告)日：2024-02-06

申请号：US17565945

申请日：2021-12-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Changmok Choi ,  Ui Kun Kwon ,  Jaechun Lee ,  Jongwook Lee ,  Ha-Neul Lee

IPC: G16H20/30 ,  A61B5/11 ,  A61B5/0205 ,  A61B5/00 ,  A63B24/00 ,  A61B5/024 ,  H04M1/72412

CPC classification number: G16H20/30 ,  A61B5/0205 ,  A61B5/1118 ,  A61B5/486 ,  A61B5/742 ,  A61B5/7405 ,  A61B5/7455 ,  A61B5/7475 ,  A63B24/0075 ,  H04M1/72412 ,  A61B5/02438 ,  A61B5/681 ,  A61B2503/10 ,  A63B2024/0065 ,  A63B2024/0068

Abstract: An exercise feedback provision apparatus includes an acquirer configured to acquire exercise intensity information including either one or both of user biometric information and user movement information, and a controller configured to verify whether the exercise intensity information is in a predetermined range, and generate a control signal based on a result of the verifying. The apparatus further includes a feedback provider configured to output a tactile feedback based on a pattern corresponding to the control signal.

公开(公告)号：US10057765B2

公开(公告)日：2018-08-21

申请号：US14840229

申请日：2015-08-31

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyosun Hwang ,  Misuk Huh ,  Sang Joon Kim ,  Jongwook Lee

IPC: H04W4/00 ,  H04W12/04 ,  H04W12/06 ,  H04W72/12 ,  H04W28/26 ,  H04W84/20 ,  A61B5/00

CPC classification number: H04W12/04 ,  A61B5/0024 ,  H04W12/003 ,  H04W12/06 ,  H04W28/26 ,  H04W72/1289 ,  H04W84/20

Abstract: An operation method of a master node, the method including transmitting, to a slave node, a first resource reservation information including packet information about a packet to be transferred between the master node and the slave node; allocating a radio resource corresponding to the first resource reservation information, for exchanging security information; transferring the packet using the allocated radio resource; and determining whether the packet was successfully transferred based on the packet information.

公开(公告)号：US09443935B2

公开(公告)日：2016-09-13

申请号：US15013647

申请日：2016-02-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L21/336 ,  H01L29/10 ,  H01L29/66 ,  H01L21/02 ,  H01L21/302 ,  H01L21/308 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78 ,  H01L29/06

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

公开(公告)号：US09287402B2

公开(公告)日：2016-03-15

申请号：US14626215

申请日：2015-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L21/336 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02 ,  H01L21/302 ,  H01L21/308 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract translation: 提供了形成场效应晶体管的方法。 该方法包括制备具有第一区域和第二区域的衬底，在第一和第二区域上形成鳍部，每个翅片部分从衬底突出并具有第一宽度，形成第一掩模图案以暴露翅片部分 并且覆盖第二区域上的翅片部分，并且改变设置在第一区域上的翅片部分的宽度。

公开(公告)号：US20150162437A1

公开(公告)日：2015-06-11

申请号：US14626215

申请日：2015-02-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L29/78

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract translation: 提供了形成场效应晶体管的方法。 该方法包括制备具有第一区域和第二区域的衬底，在第一和第二区域上形成鳍部，每个翅片部分从衬底突出并具有第一宽度，形成第一掩模图案以暴露翅片部分 并且覆盖第二区域上的翅片部分，并且改变设置在第一区域上的翅片部分的宽度。

公开(公告)号：US08987100B2

公开(公告)日：2015-03-24

申请号：US13780527

申请日：2013-02-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Woo Oh ,  Shincheol Min ,  Jongwook Lee ,  Choongho Lee

IPC: H01L21/336 ,  H01L29/66 ,  H01L21/02 ,  H01L21/302 ,  H01L21/308 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L29/1033 ,  H01L21/02107 ,  H01L21/302 ,  H01L21/3086 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/0649 ,  H01L29/66477 ,  H01L29/66818 ,  H01L29/785

Abstract: Provided are methods of forming field effect transistors. The method includes preparing a substrate with a first region and a second region, forming fin portions on the first and second regions, each of the fin portions protruding from the substrate and having a first width, forming a first mask pattern to expose the fin portions on the first region and cover the fin portions on the second region, and changing widths of the fin portions provided on the first region.

Abstract translation: 提供了形成场效应晶体管的方法。 该方法包括制备具有第一区域和第二区域的衬底，在第一和第二区域上形成鳍部，每个翅片部分从衬底突出并具有第一宽度，形成第一掩模图案以暴露翅片部分 并且覆盖第二区域上的翅片部分，并且改变设置在第一区域上的翅片部分的宽度。

公开(公告)号：US20130224936A1

公开(公告)日：2013-08-29

申请号：US13690394

申请日：2012-11-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jongwook Lee ,  Donggu Yi

IPC: H01L21/8234

CPC classification number: H01L21/823431 ,  H01L21/823821

Abstract: Methods of manufacturing a semiconductor device are provided. The method includes constructing and arranging a semiconductor substrate to include a first active region and a second active region and forming mold patterns on the semiconductor substrate. The mold patterns have openings that expose a top surface of the semiconductor substrate. A plurality of first semiconductor fins are formed in openings at the first active region and a plurality of second semiconductor fins in openings at the second active region and selectively recessing top surfaces of the mold patterns. A recessed depth of the mold patterns on the first active region is different than a recessed depth of the mold patterns on the second active region. A gate electrode is formed over the first and second semiconductor fins. A distance between a first semiconductor fin of the plurality of first semiconductor fins and a second semiconductor fin of the plurality of second semiconductor fins adjacent the first semiconductor fin is greater than a distance between two or more first semiconductor fins of the plurality of first semiconductor fins that are adjacent each other.

Abstract translation: 提供制造半导体器件的方法。 该方法包括构造和布置半导体衬底以包括第一有源区和第二有源区，并在半导体衬底上形成模型图案。 模具图案具有露出半导体衬底的顶表面的开口。 多个第一半导体散热片形成在第一有源区域的开口中，多个第二半导体鳍片在第二有源区域的开口中形成，并且选择性地凹陷模具图案的顶表面。 第一主动区域上的模具图案的凹陷深度不同于第二活动区域上的模具图案的凹陷深度。 栅电极形成在第一和第二半导体鳍上。 多个第一半导体鳍片的第一半导体鳍片与邻近第一半导体鳍片的多个第二半导体鳍片的第二半导体鳍片之间的距离大于多个第一半导体鳍片的两个或更多个第一半导体鳍片之间的距离 彼此相邻。