公开(公告)号：US20160102396A1

公开(公告)日：2016-04-14

申请号：US14876183

申请日：2015-10-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Zhe Wu ,  Jung-Hwan Park ,  Jeong-Hee Park ,  Dong-Ho Ahn

IPC: C23C14/54 ,  C23C14/14 ,  C23C14/50 ,  C23C14/22

CPC classification number: C23C14/541 ,  C23C14/0623 ,  C23C14/50 ,  C23C14/542 ,  C23C14/548 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32724 ,  H01J37/34

Abstract: A physical vapor deposition (PVD) apparatus for forming a phase-changeable layer includes a process chamber including a loading chamber configured to load a substrate, and a depositing chamber configured to deposit ion particles of a phase-changeable material onto the substrate; a target member on an upper portion of the depositing chamber and configured to provide the ion particles of the phase-changeable material which react with process gases in a plasma state; a plasma generator configured to generate a process gas plasma from the process gases; a chuck on a lower portion of the depositing chamber and holding the substrate, the chuck including a heater configured to heat the substrate, and at least one electrode configured to guide the ion particles of the phase-changeable material to the substrate; and a supplementary heater in the process chamber and configured to transfer radiant heat around the substrate.

Abstract translation: 用于形成相变层的物理气相沉积（PVD）装置包括处理室，该处理室包括被配置为加载基板的装载室和被配置成将相变材料的离子颗粒沉积到基板上的沉积室; 沉积室上部的目标构件，其构造成提供与等离子体状态的处理气体反应的相变材料的离子颗粒; 等离子体发生器，其被配置为从所述处理气体产生处理气体等离子体; 卡盘位于沉积室的下部并保持基板，卡盘包括构造成加热基板的加热器和至少一个电极，其被配置为将相变材料的离子颗粒引导到基板; 以及处理室中的附加加热器，并且被配置为在衬底周围传递辐射热。

公开(公告)号：US20150179658A1

公开(公告)日：2015-06-25

申请号：US14574907

申请日：2014-12-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki-Seok Lee ,  Jung-Hwan Park ,  Hyo-Jin Park ,  Kyu-Hyun Lee

IPC: H01L27/115 ,  H01L21/28

CPC classification number: H01L21/28008 ,  H01L27/10888 ,  H01L27/10891 ,  H01L27/10894 ,  H01L29/4236

Abstract: A semiconductor memory device and a manufacturing method of the semiconductor memory device are provided. The semiconductor memory device can include a substrate in which a cell area and a peripheral area are defined, a first gate insulating layer on the peripheral area, and a poly gate layer on the first gate insulating layer to form a combined stack, wherein the combined stack of the first gate insulating layer and the first poly gate layer is absent from the cell area.

Abstract translation: 提供半导体存储器件和半导体存储器件的制造方法。 半导体存储器件可以包括其中限定了单元区域和外围区域的基板，外围区域上的第一栅极绝缘层，以及在第一栅极绝缘层上形成组合堆叠的多晶硅栅极层，其中组合 第一栅极绝缘层和第一多晶硅层的堆叠不存在于电池区域中。