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    Method of manufacturing a phase change memory device
    1.
    发明授权
    Method of manufacturing a phase change memory device 有权
    相变存储器件的制造方法

    公开(公告)号：US09318700B2

    公开(公告)日：2016-04-19

    申请号：US14740929

    申请日：2015-06-16

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Zhe Wu ,  Jeong-Hee Park ,  Dong-Ho Ahn ,  Jung-Hwan Park ,  Jun-Ku Ahn ,  Sung-Lae Cho ,  Hideki Horii

    IPC分类号： H01L21/20 ,  H01L45/00

    CPC分类号： H01L45/06 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/141 ,  H01L45/144 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1666 ,  H01L45/1683

    摘要： In a method of manufacturing a phase change memory device, an insulating interlayer having a through opening is formed on a substrate, at least one conformal phase change material layer pattern is formed along the sides of the opening, and a plug-like phase change material pattern having a composition different from that of each conformal phase change material layer pattern is formed on the at least one conformal phase change material layer pattern as occupying a remaining portion of the opening. Energy is applied to the phase change material layer patterns to form a mixed phase change material layer pattern including elements from the conformal and plug-like phase change material layer patterns.

    摘要翻译： 在相变存储装置的制造方法中，在基板上形成具有通孔的绝缘中间层，沿开口侧形成至少一个共形相变材料层图案，并且形成插塞状相变材料 具有不同于每个共形相变材料层图案的组成的图案形成在占据开口的剩余部分的至少一个共形相变材料层图案上。 将能量施加到相变材料层图案以形成包括来自保形和插塞状相变材料层图案的元件的混合相变材料层图案。

    Variable resistance memory devices
    3.
    发明授权
    Variable resistance memory devices 有权

    公开(公告)号：US10468594B2

    公开(公告)日：2019-11-05

    申请号：US15358544

    申请日：2016-11-22

    申请人： Samsung Electronics Co., Ltd.

    发明人： Jin-Woo Lee ,  Soon-Oh Park ,  Jeong-Hee Park ,  Hideki Horii

    IPC分类号： H01L45/00 ,  H01L27/24

    摘要： A variable resistance memory device includes a pattern of one or more first conductive lines, a pattern of one or more second conductive lines, and a memory structure between the first and second conductive lines. The pattern of first conductive lines extends in a first direction on a substrate, and the first conductive lines extend in a second direction crossing the first direction. The pattern of second conductive lines extends in the second direction on the first conductive lines, and the second conductive lines extend in the first direction. The memory structure vertically overlaps a first conductive line and a second conductive line. The memory structure includes an electrode structure, an insulation pattern on a central upper surface of the electrode structure, and a variable resistance pattern on an edge upper surface of the electrode structure. The variable resistance pattern at least partially covers a sidewall of the insulation pattern.

    Variable resistance memory devices
    4.
    发明授权
    Variable resistance memory devices 有权

    公开(公告)号：US10388867B2

    公开(公告)日：2019-08-20

    申请号：US15294873

    申请日：2016-10-17

    申请人： SAMSUNG ELECTRONICS CO., LTD.

    发明人： Zhe Wu ,  Soon-Oh Park ,  Jeong-Hee Park ,  Dong-Ho Ahn ,  Hideki Horii

    IPC分类号： H01L47/00 ,  H01L45/00 ,  H01L27/24

    摘要： A variable resistance memory device including a selection pattern; an intermediate electrode contacting a first surface of the selection pattern; a variable resistance pattern on an opposite side of the intermediate electrode relative to the selection pattern; and a first electrode contacting a second surface of the selection pattern and including a n-type semiconductor material, the second surface of the selection pattern being opposite the first surface thereof.

    PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD OF DEPOSITING PHASE-CHANGE MATERIALS USING THE SAME
    6.
    发明申请
    PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD OF DEPOSITING PHASE-CHANGE MATERIALS USING THE SAME 审中-公开
    物理蒸气沉积装置及使用相变材料沉积相变材料的方法

    公开(公告)号：US20160102396A1

    公开(公告)日：2016-04-14

    申请号：US14876183

    申请日：2015-10-06

    申请人： Samsung Electronics Co., Ltd.

    发明人： Zhe Wu ,  Jung-Hwan Park ,  Jeong-Hee Park ,  Dong-Ho Ahn

    IPC分类号： C23C14/54 ,  C23C14/14 ,  C23C14/50 ,  C23C14/22

    CPC分类号： C23C14/541 ,  C23C14/0623 ,  C23C14/50 ,  C23C14/542 ,  C23C14/548 ,  H01J37/32522 ,  H01J37/32623 ,  H01J37/32724 ,  H01J37/34

    摘要： A physical vapor deposition (PVD) apparatus for forming a phase-changeable layer includes a process chamber including a loading chamber configured to load a substrate, and a depositing chamber configured to deposit ion particles of a phase-changeable material onto the substrate; a target member on an upper portion of the depositing chamber and configured to provide the ion particles of the phase-changeable material which react with process gases in a plasma state; a plasma generator configured to generate a process gas plasma from the process gases; a chuck on a lower portion of the depositing chamber and holding the substrate, the chuck including a heater configured to heat the substrate, and at least one electrode configured to guide the ion particles of the phase-changeable material to the substrate; and a supplementary heater in the process chamber and configured to transfer radiant heat around the substrate.

    摘要翻译： 用于形成相变层的物理气相沉积（PVD）装置包括处理室，该处理室包括被配置为加载基板的装载室和被配置成将相变材料的离子颗粒沉积到基板上的沉积室; 沉积室上部的目标构件，其构造成提供与等离子体状态的处理气体反应的相变材料的离子颗粒; 等离子体发生器，其被配置为从所述处理气体产生处理气体等离子体; 卡盘位于沉积室的下部并保持基板，卡盘包括构造成加热基板的加热器和至少一个电极，其被配置为将相变材料的离子颗粒引导到基板; 以及处理室中的附加加热器，并且被配置为在衬底周围传递辐射热。