公开(公告)号：US09041218B2

公开(公告)日：2015-05-26

申请号：US14187357

申请日：2014-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki-Tae Park ,  Kang-Wook Lee ,  Hyun-Kyoung Kim

IPC: H01L23/48 ,  H01L23/52 ,  H01L29/40 ,  H01L23/538 ,  H01L21/768 ,  H01L25/065 ,  H01L25/00 ,  H01L23/00

CPC classification number: H01L23/5384 ,  H01L21/76898 ,  H01L23/481 ,  H01L24/05 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/16 ,  H01L2225/06513 ,  H01L2225/06541 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/00

Abstract: A semiconductor device includes a substrate, and a through electrode passing through the substrate. The semiconductor device has a pad region and a through electrode region. A pad covers the pad region, extends into the through electrode region, and delimits an opening in the through electrode region. A through electrode extends through the semiconductor substrate below the hole in the pad in the through region.

Abstract translation: 半导体器件包括衬底和穿过衬底的通孔。 半导体器件具有焊盘区域和贯通电极区域。 焊盘覆盖焊盘区域，延伸到通孔电极区域中，并限定通孔电极区域中的开口。 穿通电极通过穿通区域中的垫中的孔下方的半导体衬底延伸。

公开(公告)号：US09036412B2

公开(公告)日：2015-05-19

申请号：US13908006

申请日：2013-06-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Myung-Hoon Choi ,  Jae-Yong Jeong ,  Ki-Tae Park

IPC: G11C11/34 ,  G11C16/34 ,  G11C29/42 ,  G11C16/04 ,  G11C16/26 ,  G11C29/02 ,  G11C16/00

CPC classification number: G11C16/34 ,  G11C16/00 ,  G11C16/0483 ,  G11C16/26 ,  G11C16/3431 ,  G11C16/349 ,  G11C29/021 ,  G11C29/028 ,  G11C29/42

Abstract: A method of operating a memory device includes applying an initial read voltage to a selected wordline to perform a read operation on memory cells connected to the selected wordline, determining whether a read failure occurs with respect to one or more of the memory cells, upon determining that a read failure has occurred with respect to some of the memory cells, determining threshold voltage distribution information for distinct groups of the memory cells, and determining a new read voltage to be applied to the selected wordline based on the threshold voltage distribution information.

Abstract translation: 一种操作存储器件的方法包括将初始读取电压施加到所选择的字线以对连接到所选择的字线的存储器单元执行读取操作，确定在确定存储器单元中的一个或多个时是否发生读取故障 相对于一些存储器单元发生读取失败，确定存储器单元的不同组的阈值电压分布信息，以及基于阈值电压分布信息确定要施加到所选字线的新读取电压。