公开(公告)号：US20230333782A1

公开(公告)日：2023-10-19

申请号：US18340950

申请日：2023-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wontaeck Jung ,  Bohchang Kim ,  Kuihan Ko ,  Jaeyong Jeong

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  G06F3/06

CPC classification number: G06F3/0679 ,  G06F3/0604 ,  G06F3/0652 ,  G06F3/0655 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  H10B43/27

Abstract: A memory system includes a first memory device including a plurality of first memory blocks each including a plurality of first memory cells stacked in a direction perpendicular to a substrate; and a memory controller configured to control a memory operation of the first memory device. The memory controller is configured to select and operate any one of different control schemes for each of the first memory blocks based on a number of first not-open (N/O) strings included in each of the first memory blocks, respectively.

公开(公告)号：US11726722B2

公开(公告)日：2023-08-15

申请号：US17307317

申请日：2021-05-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Wontaeck Jung ,  Bohchang Kim ,  Kuihan Ko ,  Jaeyong Jeong

IPC: G06F3/06 ,  G11C16/04 ,  G11C16/10 ,  G11C16/14 ,  H10B43/27

CPC classification number: G06F3/0679 ,  G06F3/0604 ,  G06F3/0652 ,  G06F3/0655 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/14 ,  H10B43/27

Abstract: A memory system includes a first memory device including a plurality of first memory blocks each including a plurality of first memory cells stacked in a direction perpendicular to a substrate; and a memory controller configured to control a memory operation of the first memory device. The memory controller is configured to select and operate any one of different control schemes for each of the first memory blocks based on a number of first not-open (N/O) strings included in each of the first memory blocks, respectively.

公开(公告)号：US09659660B2

公开(公告)日：2017-05-23

申请号：US15174183

申请日：2016-06-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang-Wan Nam ,  Kuihan Ko ,  Yang-Lo Ahn ,  Kitae Park

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/08 ,  G11C16/34 ,  G11C7/04

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427

Abstract: A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape.