公开(公告)号：US20240387089A1

公开(公告)日：2024-11-21

申请号：US18785018

申请日：2024-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongchun RYU ,  Seungjae LEE ,  Naoki HASE ,  Kwangseok KIM

IPC: H01F10/32 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: A synthetic antiferromagnet includes a first ferromagnetic layer having a first surface; a second ferromagnetic layer having a second surface facing the first surface of the first ferromagnetic layer; and a first non-magnetic layer disposed between the first ferromagnetic layer and the second ferromagnetic layer, wherein the first ferromagnetic layer has an inclined perpendicular magnetic anisotropy (PMA) in which a magnetization direction of the first ferromagnetic layer is inclined from a first direction perpendicular to the first surface and the second surface, a component in a first direction of the magnetization direction of the first ferromagnetic layer and a component in a first direction of a magnetization direction of the second ferromagnetic layer are opposite to each other.

公开(公告)号：US20240334840A1

公开(公告)日：2024-10-03

申请号：US18742115

申请日：2024-06-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangseok KIM ,  Seonggeon PARK ,  Seungjae LEE ,  Naoki HASE

IPC: H10N50/10 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/85

CPC classification number: H10N50/10 ,  G11C11/161 ,  H01F10/3286 ,  H10B61/00 ,  H10N50/85

Abstract: Provided are a magnetic tunneling junction device having more stable perpendicular magnetic anisotropy (PMA) and/or increased operating speed, and/or a memory device including the magnetic tunneling junction device. The magnetic tunneling junction device includes a free layer having a first surface and a second surface opposite the first surface; a pinned layer facing the first surface of the free layer; a first oxide layer between the pinned layer and the free layer; and a second oxide layer on the second surface of the free layer. The free layer includes a magnetic material X doped with a non-magnetic metal. The second oxide layer includes ZOx which is an oxide of a metal Z. An oxygen affinity of the metal Z is greater than an oxygen affinity of the non-magnetic metal X.

公开(公告)号：US20170194555A1

公开(公告)日：2017-07-06

申请号：US15466802

申请日：2017-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joonmyoung LEE ,  Kwangseok KIM ,  Ki Woong KIM ,  Whankyun KIM ,  Sang Hwan PARK

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/222 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a reference magnetic pattern having a magnetization direction fixed in one direction, a free magnetic pattern having a changeable magnetization direction, and a tunnel barrier pattern disposed between the free and reference magnetic patterns. The free magnetic pattern has a first surface being in contact with the tunnel barrier pattern and a second surface opposite to the first surface. The magnetic memory device further includes a sub-oxide pattern disposed on the second surface of the free magnetic pattern, and a metal boride pattern disposed between the sub-oxide pattern and the second surface of the free magnetic pattern. The magnetization directions of the free and reference magnetic patterns are substantially perpendicular to the first surface of the free magnetic pattern.