公开(公告)号：US20240371876A1

公开(公告)日：2024-11-07

申请号：US18775521

申请日：2024-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Ye Ji Lee ,  Yoon Young Jung

IPC: H01L27/092 ,  H01L23/528 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.

公开(公告)号：US12094976B2

公开(公告)日：2024-09-17

申请号：US17558967

申请日：2021-12-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Yu Ri Lee ,  In Yeal Lee

IPC: H01L29/78 ,  H01L29/08

CPC classification number: H01L29/7851 ,  H01L29/0847

Abstract: A semiconductor device includes a first fin-shaped pattern which extends lengthwise in a first direction, a second fin-shaped pattern which is spaced apart from the first fin-shaped pattern in a second direction and extends lengthwise in the first direction, a first gate electrode extending lengthwise in the second direction on the first fin-shaped pattern, a second gate electrode extending lengthwise in the second direction on the second fin-shaped pattern, a first gate separation structure which separates the first gate electrode and the second gate electrode and is at the same vertical level as the first gate electrode and the second gate electrode, and a first source/drain contact extending lengthwise in the second direction on the first fin-shaped pattern and the second fin-shaped pattern. The first source/drain contact includes a first lower source/drain contact region which intersects the first fin-shaped pattern and the second fin-shaped pattern, and a first upper source/drain contact region which protrudes from the first lower source/drain contact region, and the first upper source/drain contact region does not overlap the first gate separation structure in the first direction.

公开(公告)号：US11521900B2

公开(公告)日：2022-12-06

申请号：US17134710

申请日：2020-12-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gi Gwan Park ,  Jung Gun You ,  Ki Il Kim ,  Sug Hyun Sung ,  Myung Yoon Um

IPC: H01L21/8238 ,  H01L29/66 ,  H01L29/78 ,  H01L27/092 ,  H01L21/762 ,  H01L21/8234 ,  H01L29/165

Abstract: A method of manufacturing a semiconductor device includes forming a first fin-type pattern and a second fin-type pattern which are separated by a first trench between facing ends thereof, forming a first insulating layer filling the first trench, removing a portion of the first insulating layer to form a second trench on the first insulating layer, and forming a third trench by enlarging a width of the second trench.

公开(公告)号：US20220262797A1

公开(公告)日：2022-08-18

申请号：US17511923

申请日：2021-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Deok Han Bae ,  Ju Hun Park ,  Myung Yoon Um ,  Ye Ji Lee ,  Yoon Young Jung

IPC: H01L27/092 ,  H01L29/417 ,  H01L23/528 ,  H01L29/423 ,  H01L29/786 ,  H01L29/06

Abstract: A semiconductor device includes a substrate having a first power supply region, a second power supply region, and a cell region therein. The cell region extends between the first power supply region and the second power supply region. A first active region and a second active region are provided, which extend side-by-side within the cell region. A first power supply wiring is provided, which extends in the first direction within the first power supply region. A first source/drain contact is provided, which connects the first active region and the second active region. A second source/drain contact is provided, which connects the first active region and the first power supply wiring. The first source/drain contact includes a first recess portion disposed inside an intermediate region between the first active region and the second active region.